JP3015899B2 - Detachment method of adsorbed object in electrostatic chuck - Google Patents
Detachment method of adsorbed object in electrostatic chuckInfo
- Publication number
- JP3015899B2 JP3015899B2 JP63005066A JP506688A JP3015899B2 JP 3015899 B2 JP3015899 B2 JP 3015899B2 JP 63005066 A JP63005066 A JP 63005066A JP 506688 A JP506688 A JP 506688A JP 3015899 B2 JP3015899 B2 JP 3015899B2
- Authority
- JP
- Japan
- Prior art keywords
- adsorbed
- conductor
- force
- electrostatic chuck
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えば半導体集積回路の製造装置において
用いられ、その表面上に成膜処理又はエッチング処理等
の各種処理を施される試料を、静電力により吸着，保持
する静電チャックにおける被吸着物の離脱方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a sample used in, for example, a semiconductor integrated circuit manufacturing apparatus, on which a surface is subjected to various processes such as a film forming process or an etching process. The present invention relates to a method for removing an object to be attracted from an electrostatic chuck that is attracted and held by electrostatic force.
例えば、電子サイクロトロン共鳴（Electron Cyclotr
on Resonance）を利用して生成されるECRプラズマによ
り、半導体基板上に所望の物質の薄膜を形成せしめるCV
D（Chemical Vapor Deposition）装置、半導体基板上に
微細な回路パターンを形成せしめるドライエッチング装
置等の半導体集積回路の製造装置は、プラズマ生成室内
に生成されるECRプラズマを、例えば発散磁界の作用に
より引出し、プラズマ生成室に連設した試料室内に保持
された半導体基板上に照射して、該基板上に薄膜の形成
又はエッチングを行うものであり、これらの装置におい
ては、半導体基板を試料室内に保持するために、静電吸
着作用を利用する静電チャックが用いられている。For example, electron cyclotron resonance (Electron Cyclotr
CV that forms a thin film of a desired substance on a semiconductor substrate by ECR plasma generated using on-resonance
2. Description of the Related Art Semiconductor integrated circuit manufacturing apparatuses such as a D (Chemical Vapor Deposition) apparatus and a dry etching apparatus for forming a fine circuit pattern on a semiconductor substrate extract ECR plasma generated in a plasma generation chamber by, for example, the action of a divergent magnetic field. Irradiates a semiconductor substrate held in a sample chamber connected to a plasma generation chamber to form or etch a thin film on the substrate. In these apparatuses, the semiconductor substrate is held in the sample chamber. For this purpose, an electrostatic chuck utilizing an electrostatic attraction effect is used.
この静電チャックとして、薄膜状の絶縁体にて外側に
被覆してある平板状をなす一体物として構成された導電
体を前記試料室内に固設し、絶縁体の表面に被吸着物で
ある半導体基板を密接させ、導電体と半導体基板との間
に所定の直流電圧を印加して、両者間に静電力を生ぜし
め、この静電力により半導体基板を導電体上に吸着，保
持する構成とした単極型の静電チャックがある。As the electrostatic chuck, a flat-plate-shaped conductor integrally covered with a thin-film insulator is fixed in the sample chamber, and the surface of the insulator is an object to be adsorbed. A configuration in which the semiconductor substrate is brought into close contact, a predetermined DC voltage is applied between the conductor and the semiconductor substrate, an electrostatic force is generated between the two, and the semiconductor substrate is attracted and held on the conductor by the electrostatic force; There is a single pole type electrostatic chuck.
このような静電チャックにおける被吸着物の離脱方法
においては、吸着状態にある被吸着物を取外す場合、前
記直流電圧の印加を中断し、静電力を消滅させた後、被
吸着物を離脱させる手順により行っている。ところが、
前記中断の後においても、導電体を被覆する絶縁体に電
荷が残留し、静電力が暫時残存するため、被吸着物の取
外しが可能となるまでに多大の待ち時間が必要であると
いう難点があり、また、残存する静電力に抗して被吸着
物を離脱せしめるべく、これに大きい離脱力を加えた場
合、特に被吸着物が半導体基板のように壊れ易い物体で
あるときに、前記離脱力によって被吸着物が破壊される
虞があった。In the method of detaching an object to be adsorbed in such an electrostatic chuck, when removing the object to be adsorbed in an adsorption state, the application of the DC voltage is interrupted, the electrostatic force is extinguished, and then the object to be adsorbed is detached. The procedure is performed. However,
Even after the interruption, the electric charge remains on the insulator covering the conductor, and the electrostatic force remains for a while, so that a long waiting time is required before the object to be adsorbed can be removed. When a large detaching force is applied to the object to be detached against the remaining electrostatic force, especially when the object to be adsorbed is a fragile object such as a semiconductor substrate, There is a fear that the object to be adsorbed is destroyed by the force.
第４図は、従来の静電チャックによりシリコン半導体
基板を吸着した場合において、直流電圧の印加時に生じ
る吸着力と、印加を中断した直後における残留吸着力と
を示すグラフであり、図中、○印は前者を、また●印は
後者を示している。本図に示す如く、従来の静電チャッ
クにおいては、前記残留吸着力が吸着時間の増大に伴っ
て増大し、20分間の吸着を行った後直流電圧の印加を中
断した場合、電圧印加時における吸着力の略50％の大き
さを有する吸着力が、中断直後に残留していることが明
らかである。FIG. 4 is a graph showing a suction force generated when a DC voltage is applied and a residual suction force immediately after the application of the DC voltage is stopped when a silicon semiconductor substrate is suctioned by a conventional electrostatic chuck. The mark indicates the former, and the mark indicates the latter. As shown in the figure, in the conventional electrostatic chuck, when the residual suction force increases with the increase of the suction time, and the application of the DC voltage is interrupted after performing the suction for 20 minutes, It is clear that a suction force having a magnitude of approximately 50% of the suction force remains immediately after the interruption.
本発明は斯かる事情に鑑みてなされたものであり、被
吸着物が破壊されることなく、速やかに離脱可能な静電
チャックにおける被吸着物の離脱方法を提供することを
目的とする。The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method of detaching an object to be attracted from an electrostatic chuck that can be quickly detached without breaking the object to be attracted.
本発明に係る静電チャックにおける被吸着物の離脱方
法は、絶縁体にて外側を被覆してある単一の導電体と、
前記絶縁体の表面に接触する被吸着物との間に直流電圧
を印加し、両者間に生じる静電力により被吸着物を前記
導電体に吸着せしめる静電チャックにおける前記導電体
から前記被吸着物を離脱させる被吸着物の離脱方法にお
いて、被吸着物を離脱せしめる際に、逆電圧印加手段に
より前記被吸着物と前記導電体との間に吸着時と逆方向
の直流電圧を印加しつつ、被吸着物を破壊しない程度
の、導電体から離脱する方向に作用する離脱力を前記被
吸着物に加え、被吸着物と導電体との間の静電力が低減
され、これが被吸着物に加えられる前記離脱力より小さ
くなった時点でこの離脱力により被吸着物を離脱せしめ
ることを特徴とする。The method of detaching an object to be adsorbed in the electrostatic chuck according to the present invention includes a single conductor whose outer surface is covered with an insulator,
A DC voltage is applied between the object and the object to be in contact with the surface of the insulator, and the object to be adsorbed from the conductor in the electrostatic chuck that causes the object to be adsorbed to the conductor by electrostatic force generated therebetween. In the method of desorbing the object to be adsorbed, when desorbing the object to be adsorbed, while applying a DC voltage in the opposite direction to the time of adsorption between the object to be adsorbed and the conductor by a reverse voltage applying means, Applying a detaching force acting in the direction of detaching from the conductor to such an extent that the object is not destroyed, the electrostatic force between the object and the conductor is reduced, and this is added to the object. The object to be adsorbed is detached by the detachment force when the detachment force becomes smaller than the above-mentioned detachment force.
本発明においては、被吸着物を破壊しない程度の力を
加えることで、逆電圧印加手段の動作により、被吸着物
と導電体との間の静電力が低減され、これが被吸着物に
加えられる離脱力よりも小さくなった時点で、被吸着物
が離脱せしめられる。In the present invention, by applying a force that does not destroy the object to be adsorbed, the electrostatic force between the object to be adsorbed and the conductor is reduced by the operation of the reverse voltage applying means, and this is applied to the object to be adsorbed. When the force becomes smaller than the detaching force, the object to be adsorbed is detached.
以下本発明をその実施例を示す図面に基づいて詳述す
る。第１図は本発明方法を適用する静電チャックの構成
を示す模式的断面図である。Hereinafter, the present invention will be described in detail with reference to the drawings showing the embodiments. FIG. 1 is a schematic sectional view showing a configuration of an electrostatic chuck to which the method of the present invention is applied.
図において１は、円板状をなす一体物として構成され
た導電体であり、該導電体１の外表面は、その全面に亘
って絶縁体２にて被覆されている。ECRプラズマを用い
た半導体製造装置においては、前記絶縁体２として、耐
熱性に優れたセラミック（Al2O3）が用いられ、該絶縁
体２は、これの焼成時に導電体１を一体的にモールドす
るか、又は導電体１の表面に溶射せしめることにより、
導電体１の表面に薄膜状をなして被着される。In FIG. 1, reference numeral 1 denotes a conductor formed as a disk-shaped integral body, and an outer surface of the conductor 1 is covered with an insulator 2 over the entire surface. In a semiconductor manufacturing apparatus using ECR plasma, a ceramic (Al 2 O 3 ) having excellent heat resistance is used as the insulator 2, and the insulator 2 integrates the conductor 1 at the time of firing. By molding or spraying on the surface of the conductor 1,
A thin film is attached to the surface of the conductor 1.
導電体１は、電源切換スイッチ７を介して、負極側を
アースに接続してある第１の直流電源５の正極側と、正
極側をアースに接続してある第２の直流電源６の負極側
とに夫々接続してあり、電源切換スイッチ７が第１図に
示す切換位置にある場合、導電体１は、前記第１の直流
電源５に接続されて正に帯電し、また逆の切換位置にあ
る場合、第２の直流電源６に接続されて負に帯電するよ
うになしてある。The conductor 1 is connected via a power switch 7 to a positive electrode of the first DC power supply 5 whose negative electrode is connected to ground and a negative electrode of a second DC power supply 6 whose positive electrode is connected to ground. When the power supply changeover switch 7 is in the switching position shown in FIG. 1, the conductor 1 is connected to the first DC power supply 5 to be positively charged and reversely switched. When in the position, it is connected to the second DC power supply 6 so as to be negatively charged.
導電体１の一側には、そのソレノイドＳへの励磁電流
の通断に応じて、プランジャを進退動作させる電磁シリ
ンダ４が配設されている。電磁シリンダ４の前記プラン
ジャは、導電体１の中心部を、厚さ方向に貫通する貫通
孔に、一側から挿通させてあり、その先端部には、導電
体１の他側において、円板状の押圧部材4aが固着してあ
る。電磁シリンダ４は、そのソレノイドＳに励磁電流が
通電された場合、この励磁電流に応じた電磁力を発生
し、該電磁力によりプランジャを進出させて、押圧部材
4aを絶縁体２表面から突出させるべく動作し、該電磁シ
リンダ４の配設位置は、ソレノイドＳに励磁電流が通電
されておらず、前記プランジャがその退入位置にある場
合、押圧部材4aの一面が導電体１の他側における絶縁体
２表面と略面一をなすように設定してある。従って、電
磁シリンダ４の配設位置と反対側の絶縁体２の表面上に
後述する如く吸着，保持される被吸着物３には、ソレノ
イドＳの励磁に応じて電磁シリンダ４が発生する力が、
絶縁体２の表面からの離脱力として、押圧部材4aを介し
て作用することになる。On one side of the conductor 1, an electromagnetic cylinder 4 for moving the plunger forward and backward in accordance with the passage of the exciting current to the solenoid S is provided. The plunger of the electromagnetic cylinder 4 has a center portion of the conductor 1 inserted through a through hole penetrating in the thickness direction from one side, and a tip portion thereof has a disc on the other side of the conductor 1. The pressing member 4a is shaped like a stick. When an exciting current is applied to the solenoid S, the electromagnetic cylinder 4 generates an electromagnetic force in accordance with the exciting current, causes the plunger to advance by the electromagnetic force, and
4a is operated so as to protrude from the surface of the insulator 2, and when the exciting current is not supplied to the solenoid S and the plunger is at the retracted position, One surface is set to be substantially flush with the surface of the insulator 2 on the other side of the conductor 1. Accordingly, a force generated by the electromagnetic cylinder 4 in response to the excitation of the solenoid S is applied to the object 3 to be attracted and held on the surface of the insulator 2 opposite to the position where the electromagnetic cylinder 4 is disposed as described later. ,
It acts via the pressing member 4a as a detaching force from the surface of the insulator 2.
また図中９は、本発明に係る静電チャックの動作を制
御する制御部であり、その出力信号は、電磁シリンダ４
のソレノイドＳと、電源切換スイッチ７とに与えられて
いる。ソレノイドＳに制御部９からの出力信号が与えら
れた場合、ソレノイドＳに励磁電流が通電され、電磁シ
リンダ４が前記離脱力を発生するようになっており、ま
た、電源切換スイッチ７に制御部９からの出力信号が与
えられた場合、該スイッチ７は、第１図に示す一方の切
換位置から他方の切換位置に切換えられ、導電体１の接
続状態が、第１の直流電源５に接続された状態から、第
２の直流電源６に接続された状態に切換わるようなって
いる。9 is a control unit for controlling the operation of the electrostatic chuck according to the present invention.
, And a power switch 7. When an output signal from the control unit 9 is given to the solenoid S, an exciting current is supplied to the solenoid S, so that the electromagnetic cylinder 4 generates the release force. 9, the switch 7 is switched from one switching position shown in FIG. 1 to the other switching position, and the connection state of the conductor 1 is connected to the first DC power supply 5. From the connected state to the state connected to the second DC power supply 6.
さて、以上の如く構成された静電チャックにより被吸
着物３を吸着，保持する場合、まず、被吸着物３を、電
磁シリンダ４の配設位置と反対側の絶縁体２の表面上
に、導電体１と略同心をなす状態に載置する。このとき
制御部９は、ソレノイドＳに出力信号を与えておらず、
電磁シリンダ４のプランジャは退入状態にあるから、被
吸着物３は、絶縁体２の表面上に密接した状態に載置さ
れる。また、制御部９は、電源切換スイッチ７にも出力
信号を発しておらず、導電体１は、第１の直流電源５に
接続され正に帯電した状態にある。さて、このように載
置された被吸着物３の一部を、接地スイッチ８を介して
アースに接続し、該接地スイッチ８をオンすると、前記
導電体１と被吸着物３との間に静電力が発生し、被吸着
物３はこの静電力により、絶縁体２を介して導電体１に
吸着され、絶縁体２の表面上に保持される。本発明に係
る静電チャックをECRプラズマを利用した半導体製造装
置に用いる場合、被吸着物３は、これに照射されるプラ
ズマを介して接地されることになるから、被吸着物３を
アースに接続するための第１図に示す如き回路を設ける
必要はなく、被吸着物３は、これの表面へのプラズマ照
射開始と同時に絶縁体２表面上に吸着，保持される。When the object 3 is to be sucked and held by the electrostatic chuck configured as described above, first, the object 3 is placed on the surface of the insulator 2 opposite to the position where the electromagnetic cylinder 4 is disposed. It is placed so as to be substantially concentric with the conductor 1. At this time, the control unit 9 has not given an output signal to the solenoid S,
Since the plunger of the electromagnetic cylinder 4 is in the retracted state, the object 3 is placed in close contact with the surface of the insulator 2. Further, the control unit 9 does not output an output signal to the power supply changeover switch 7 as well, and the conductor 1 is connected to the first DC power supply 5 and is in a positively charged state. Now, a part of the object 3 thus placed is connected to the ground via a grounding switch 8, and when the grounding switch 8 is turned on, between the conductor 1 and the object 3. An electrostatic force is generated, and the object 3 is attracted to the conductor 1 via the insulator 2 by the electrostatic force, and is held on the surface of the insulator 2. When the electrostatic chuck according to the present invention is used in a semiconductor manufacturing apparatus using ECR plasma, the object 3 is grounded through the plasma applied to the object, and the object 3 is grounded. There is no need to provide a circuit as shown in FIG. 1 for connection, and the object 3 is adsorbed and held on the surface of the insulator 2 simultaneously with the start of plasma irradiation on the surface thereof.
このように吸着，保持された被吸着物３へのプラズマ
照射による成膜処理，エッチング処理等の所定の処理が
終了し、被吸着物３を取外す場合、前記処理の終了を適
宜の手段により検出した制御部９から、電源切換スイッ
チ７に切換え信号が発せられると共に、電磁シリンダ４
のソレノイドＳに励磁信号が発せられ、その結果とし
て、導電体１は、第２の直流電源６に接続され、正に帯
電した状態から負に帯電した状態に遷移し、導電体１と
被吸着物３との間に吸着時の逆方向の直流電圧が印加さ
れると共に、被吸着物３は、電磁シリンダ４により発生
され押圧部材4aを介してその中央部に作用する離脱力に
より、絶縁体２表面から離脱する方向に押圧される。When a predetermined process such as a film forming process and an etching process by plasma irradiation on the object 3 thus adsorbed and held is completed, and the object 3 is removed, the end of the process is detected by an appropriate means. A switching signal is sent from the control unit 9 to the power switch 7 and the electromagnetic cylinder 4
As a result, the conductor 1 is connected to the second DC power supply 6 and transitions from a positively charged state to a negatively charged state, and the conductor 1 is attracted to the solenoid S. A DC voltage in the opposite direction at the time of adsorption is applied to the object 3, and the object 3 is separated by the detaching force generated by the electromagnetic cylinder 4 and acting on the central portion thereof via the pressing member 4a. 2 Pressed in a direction to separate from the surface.
第２図は、導電体１と被吸着物３との間に、吸着時と
逆方向の直流電圧が印加された後における両者間の吸着
力の時間的変化の様子を示すグラフである。本図に示す
如く、逆電圧の印加開始直後において0.7kg程度であっ
た吸着力が、20〜30秒間の逆電圧の印加によって、0.1k
g以下の値（極小値という）にまで低減されており、こ
の時点前において被吸着物３が離脱せしめられるよう電
磁シリンダ４による離脱力を前記極小値より大きく、且
つ被吸着物３を破壊しない程度の力に定めておくことに
より、被吸着物３をわずかな力にて、容易に離脱させる
ことができる。FIG. 2 is a graph showing a temporal change in the attraction force between the conductor 1 and the object 3 after the application of a DC voltage in a direction opposite to that during the attraction. As shown in this figure, the adsorption force, which was about 0.7 kg immediately after the start of the application of the reverse voltage, was changed to 0.1 k by the application of the reverse voltage for 20 to 30 seconds.
g or less (hereinafter referred to as a minimum value). Before this point, the detachment force by the electromagnetic cylinder 4 is larger than the minimum value so that the object 3 is detached, and the object 3 is not destroyed. By setting the force to a certain level, the object 3 can be easily detached with a small force.
また第３図は、前記逆電圧の大きさを種々に変更する
と共に、該逆電圧の印加と共に、電磁シリンダ４を動作
させ、被吸着物３に300gの離脱力を加えた場合、この離
脱力により被吸着物３が離脱せしめられるまでに要する
時間を示すグラフである。本図に示す如く、被吸着物３
の離脱に要する時間はわずかであり、例えば、600Vの逆
電圧を印加した場合、印加後５秒程度で被吸着物３を離
脱せしめることが可能であり、また、逆電圧が200V程度
の低い電圧である場合においても、20秒以下のわずかな
時間にて被吸着物３を離脱せしめることが可能であり、
本発明に係る静電チャックにおいては、被吸着物３を速
やかに離脱させ得ることが明らかである。FIG. 3 shows that when the magnitude of the reverse voltage is changed in various ways and the electromagnetic cylinder 4 is operated together with the application of the reverse voltage to apply a release force of 300 g to the object 3, 5 is a graph showing the time required until the object 3 is detached from the object. As shown in FIG.
The time required for detachment is short. For example, when a reverse voltage of 600 V is applied, the object 3 can be detached in about 5 seconds after the application, and the reverse voltage is as low as about 200 V. Even in the case of, it is possible to desorb the object 3 in a short time of 20 seconds or less,
In the electrostatic chuck according to the present invention, it is apparent that the object 3 can be quickly released.
電磁シリンダ４が発生する電磁力は、ソレノイドＳへ
の励磁電流の大きさに対応するから、被吸着物３の壊れ
易さの程度に応じて励磁電流を変更し、被吸着物３に加
わる離脱力を調節することにより、被吸着物３を破壊す
ることなく、確実に離脱させることが可能である。な
お、第２図及び第３図は、被吸着物３としてシリンン半
導体基板を用いた場合を示している。Since the electromagnetic force generated by the electromagnetic cylinder 4 corresponds to the magnitude of the exciting current to the solenoid S, the exciting current is changed in accordance with the degree of fragility of the object 3 and the separation applied to the object 3 By adjusting the force, it is possible to reliably remove the object 3 without breaking it. FIGS. 2 and 3 show a case in which a silicon semiconductor substrate is used as the object 3 to be adsorbed.
なお本実施例においては、被吸着物３に離脱力を加え
る手段として電磁シリンダ４を用いたが、他の手段によ
り被吸着物３に離脱力を加える構成としてもよい。In the present embodiment, the electromagnetic cylinder 4 is used as a means for applying a detaching force to the object 3, but a configuration may be used in which the detaching force is applied to the object 3 by other means.
また本実施例においては、被吸着物３を吸着する場合
に導電体１を第１の直流電源５に接続し、また被吸着物
３を離脱せしめる場合に第２の直流電源６に接続する構
成としているが、この接続状態が逆であってもよいこと
は言うまでもない。In this embodiment, the structure is such that the conductor 1 is connected to the first DC power supply 5 when the object 3 is adsorbed, and the second DC power supply 6 is connected when the object 3 is detached. However, it goes without saying that this connection state may be reversed.
更に本実施例においては、被吸着物３の離脱時におけ
る逆電圧の印加、及び離脱力の付与を、制御部９の動作
により自動的に行う構成としているが、被吸着物への逆
電圧の印加は、電源切換スイッチ７の手動切換えにより
行う構成としてもよく、また電磁シリンダ４による被吸
着物への離脱力の付与も、ソレノイドＳの励磁回路に手
動スイッチを設け、該スイッチの操作により手動により
行う構成としてもよい。Further, in the present embodiment, the application of the reverse voltage and the application of the detaching force at the time of detachment of the object 3 are automatically performed by the operation of the control unit 9. The application may be performed by manual switching of the power supply changeover switch 7, and a manual switch may be provided in the excitation circuit of the solenoid S for applying the detaching force to the object to be adsorbed by the electromagnetic cylinder 4. May be adopted.
以上詳述した如く、本発明方法においては、被吸着物
を離脱させる際に、これと導電との間に吸着時と逆方向
の直流電圧を印加し、両者間に生じている静電力を低減
せしめつつ、被吸着物を破壊しない程度の力を加えるか
ら、被吸着物を破壊することなく、確実にしかも迅速に
離脱せしめることが可能となる等、本発明は優れた効果
を奏する。As described in detail above, in the method of the present invention, when desorbing an object to be adsorbed, a DC voltage in the opposite direction to that during adsorption is applied between the object and the conductive material to reduce the electrostatic force generated between the two. The present invention exerts an excellent effect, for example, because the force to be applied does not destroy the object to be adsorbed, and the object to be adsorbed can be reliably and quickly released without breaking the object.
図面は本発明の一実施例を示すものであり、第１図は本
発明に係る静電チャックの構成を示す模式的断面図、第
２図は逆電圧の印加後における吸着力の時間的変化を示
すグラフ、第３図は離脱力付与手段を動作させた場合の
被吸着物の離脱に要する時間を示すグラフ、第４図は従
来の静電チャックにおける吸着力及び残留吸着力の大き
さを示すグラフである。 １……導電体、２……絶縁体、３……被吸着物、４……
電磁シリンダ、５……第１の直流電源、６……第２の直
流電源、７……電源切換スイッチBRIEF DESCRIPTION OF THE DRAWINGS The drawings show an embodiment of the present invention. FIG. 1 is a schematic cross-sectional view showing the structure of an electrostatic chuck according to the present invention, and FIG. FIG. 3 is a graph showing the time required for detachment of an object to be attracted when the detachment force applying means is operated, and FIG. 4 is a graph showing the magnitude of the adsorption force and the residual adsorption force in the conventional electrostatic chuck. It is a graph shown. 1 ... conductor, 2 ... insulator, 3 ... object to be adsorbed, 4 ...
Electromagnetic cylinder, 5... First DC power supply, 6... Second DC power supply, 7.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−67629（ＪＰ，Ａ) 特開 昭60−5539（ＪＰ，Ａ) 特開 昭59−79545（ＪＰ，Ａ) 特開 昭62−255039（ＪＰ，Ａ) 実開 昭58−78641（ＪＰ，Ｕ) 実開 昭58−148936（ＪＰ，Ｕ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-59-67629 (JP, A) JP-A-60-5539 (JP, A) JP-A-59-79545 (JP, A) JP-A-62 255039 (JP, A) Japanese Utility Model Showa 58-78641 (JP, U) Japanese Utility Model Showa 58-148936 (JP, U)
Claims (1)
体と、前記絶縁体の表面に接触する被吸着物との間に直
流電圧を印加し、両者間に生じる静電力により被吸着物
を前記導電体に吸着せしめる静電チャックにおける前記
導電体から前記被吸着物を離脱させる被吸着物の離脱方
法において、 被吸着物を離脱せしめる際に、逆電圧印加手段により前
記被吸着物と前記導電体との間に吸着時と逆方向の直流
電圧を印加しつつ、被吸着物を破壊しない程度の、導電
体から離脱する方向に作用する離脱力を前記被吸着物に
加え、被吸着物と導電体との間の静電力が低減され、こ
れが被吸着物に加えられる前記離脱力より小さくなった
時点でこの離脱力により被吸着物を離脱せしめることを
特徴とする静電チャックにおける被吸着物の離脱方法。1. A DC voltage is applied between a single conductor whose outer surface is covered with an insulator and an object to be adsorbed in contact with the surface of the insulator, and an electrostatic force generated between the two is applied. In the method for releasing an object to be adsorbed from an electric conductor in an electrostatic chuck for adsorbing an object to be adsorbed to the conductor, a method for releasing the object to be adsorbed is performed by a reverse voltage applying means when the object to be adsorbed is released. While applying a DC voltage in the opposite direction to the direction of adsorption between the object and the conductor, a detachment force acting in a direction of detaching from the conductor to the extent that the object is not destroyed is applied to the object, An electrostatic chuck characterized in that an electrostatic chuck between an object to be adsorbed and a conductor is reduced, and when the electrostatic force becomes smaller than the releasing force applied to the object to be adsorbed, the object is released by the releasing force. Method of desorbing the substance to be adsorbed in the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63005066A JP3015899B2 (en) | 1988-01-12 | 1988-01-12 | Detachment method of adsorbed object in electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63005066A JP3015899B2 (en) | 1988-01-12 | 1988-01-12 | Detachment method of adsorbed object in electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01181544A JPH01181544A (en) | 1989-07-19 |
| JP3015899B2 true JP3015899B2 (en) | 2000-03-06 |
Family
ID=11601015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63005066A Expired - Lifetime JP3015899B2 (en) | 1988-01-12 | 1988-01-12 | Detachment method of adsorbed object in electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3015899B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2506219B2 (en) * | 1990-06-19 | 1996-06-12 | 富士通株式会社 | Electrostatic adsorption method |
| JP3101954B2 (en) * | 1990-12-27 | 2000-10-23 | 京セラ株式会社 | Control device for electrostatic chuck |
| JP3264391B2 (en) * | 1993-05-17 | 2002-03-11 | 東京エレクトロン株式会社 | Removal device for electrostatic attraction |
| CN105448793A (en) * | 2014-06-12 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5878641U (en) * | 1981-11-25 | 1983-05-27 | 株式会社東芝 | electrostatic chuck |
| JPS605539A (en) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | Electrostatic absorber |
-
1988
- 1988-01-12 JP JP63005066A patent/JP3015899B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01181544A (en) | 1989-07-19 |
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