JPH0117255B2 - - Google Patents

Info

Publication number
JPH0117255B2
JPH0117255B2 JP56144795A JP14479581A JPH0117255B2 JP H0117255 B2 JPH0117255 B2 JP H0117255B2 JP 56144795 A JP56144795 A JP 56144795A JP 14479581 A JP14479581 A JP 14479581A JP H0117255 B2 JPH0117255 B2 JP H0117255B2
Authority
JP
Japan
Prior art keywords
melting point
wiring
high melting
point metal
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56144795A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5846650A (ja
Inventor
Oku Kuraki
Hideo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14479581A priority Critical patent/JPS5846650A/ja
Publication of JPS5846650A publication Critical patent/JPS5846650A/ja
Publication of JPH0117255B2 publication Critical patent/JPH0117255B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP14479581A 1981-09-16 1981-09-16 電極配線の製造方法 Granted JPS5846650A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14479581A JPS5846650A (ja) 1981-09-16 1981-09-16 電極配線の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14479581A JPS5846650A (ja) 1981-09-16 1981-09-16 電極配線の製造方法

Publications (2)

Publication Number Publication Date
JPS5846650A JPS5846650A (ja) 1983-03-18
JPH0117255B2 true JPH0117255B2 (cs) 1989-03-29

Family

ID=15370625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14479581A Granted JPS5846650A (ja) 1981-09-16 1981-09-16 電極配線の製造方法

Country Status (1)

Country Link
JP (1) JPS5846650A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6193648A (ja) * 1984-10-15 1986-05-12 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030110B2 (ja) * 1979-07-18 1985-07-15 富士通株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS5846650A (ja) 1983-03-18

Similar Documents

Publication Publication Date Title
JP3042857B2 (ja) ケイ素集積回路に高導電率領域を形成する方法
JP3704427B2 (ja) 半導体装置の銅金属配線形成方法
KR0140379B1 (ko) 도전 구조체를 반도체 소자내에 선택적으로 인캡슐레이션하기 위한 방법
JPS62101049A (ja) シリサイド層の形成方法
US5518960A (en) Method of manufacturing a wiring layer including amorphous silicon and refractory metal silicide
JP3626773B2 (ja) 半導体デバイスの導電層、ｍｏｓｆｅｔ及びそれらの製造方法
JPH0576177B2 (cs)
JPS61166075A (ja) 半導体装置およびその製造方法
JPH10270380A (ja) 半導体装置
JPH06163457A (ja) 半導体装置およびその製造方法
JPH0117255B2 (cs)
JPS59195870A (ja) 半導体装置
JPH0228893B2 (cs)
JP3061027B2 (ja) 半導体装置の製造方法
JPH1056017A (ja) 半導体素子のビットライン及びその製造方法
JP3196241B2 (ja) 半導体装置の製造方法
JP3067433B2 (ja) 半導体装置の製造方法
JP3416205B2 (ja) 半導体装置およびその製造方法
JPS6011817B2 (ja) 半導体装置の製造方法
JPH04266031A (ja) 半導体装置の製造方法
JPS61135156A (ja) 半導体装置およびその製造方法
JPS6138264B2 (cs)
JPH0154853B2 (cs)
JPH0527272B2 (cs)
JPH0159731B2 (cs)