JPH0116379B2 - - Google Patents
Info
- Publication number
 - JPH0116379B2 JPH0116379B2 JP56004852A JP485281A JPH0116379B2 JP H0116379 B2 JPH0116379 B2 JP H0116379B2 JP 56004852 A JP56004852 A JP 56004852A JP 485281 A JP485281 A JP 485281A JP H0116379 B2 JPH0116379 B2 JP H0116379B2
 - Authority
 - JP
 - Japan
 - Prior art keywords
 - gas
 - thin film
 - solid electrolyte
 - gate
 - fet
 - Prior art date
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Expired
 
Links
Classifications
- 
        
- G—PHYSICS
 - G01—MEASURING; TESTING
 - G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
 - G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
 - G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
 - G01N27/403—Cells and electrode assemblies
 - G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
 - G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
 
 - 
        
- G—PHYSICS
 - G01—MEASURING; TESTING
 - G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
 - G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
 - G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
 - G01N27/403—Cells and electrode assemblies
 - G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
 - G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
 
 
Landscapes
- Chemical & Material Sciences (AREA)
 - Health & Medical Sciences (AREA)
 - Life Sciences & Earth Sciences (AREA)
 - Engineering & Computer Science (AREA)
 - Microelectronics & Electronic Packaging (AREA)
 - Electrochemistry (AREA)
 - Molecular Biology (AREA)
 - Chemical Kinetics & Catalysis (AREA)
 - Physics & Mathematics (AREA)
 - Analytical Chemistry (AREA)
 - Biochemistry (AREA)
 - General Health & Medical Sciences (AREA)
 - General Physics & Mathematics (AREA)
 - Immunology (AREA)
 - Pathology (AREA)
 - Computer Hardware Design (AREA)
 - Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
 
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP56004852A JPS57119252A (en) | 1981-01-16 | 1981-01-16 | Gas sensor element | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP56004852A JPS57119252A (en) | 1981-01-16 | 1981-01-16 | Gas sensor element | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS57119252A JPS57119252A (en) | 1982-07-24 | 
| JPH0116379B2 true JPH0116379B2 (en, 2012) | 1989-03-24 | 
Family
ID=11595200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP56004852A Granted JPS57119252A (en) | 1981-01-16 | 1981-01-16 | Gas sensor element | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS57119252A (en, 2012) | 
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS57119251A (en) * | 1981-01-16 | 1982-07-24 | Seiko Epson Corp | Gas sensor element | 
| DE102005046944A1 (de) * | 2005-09-30 | 2007-04-05 | Micronas Gmbh | Gassensitiver Feldeffekttransistor zur Detektion von Chlor | 
- 
        1981
        
- 1981-01-16 JP JP56004852A patent/JPS57119252A/ja active Granted
 
 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS57119252A (en) | 1982-07-24 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| TWI422818B (zh) | 氫離子感測場效電晶體及其製造方法 | |
| JP3744539B2 (ja) | ガス検知の方法および装置 | |
| CN107449811B (zh) | 具有保护栅极电介质的阻挡层的基于fet的湿度传感器 | |
| US6450007B1 (en) | Robust single-chip hydrogen sensor | |
| JP6233512B2 (ja) | ガスセンサー、及びセンサー装置 | |
| JPH03222367A (ja) | 絶縁ゲート型電界効果トランジスタ | |
| US20140061728A1 (en) | Gate Biasing Electrodes For FET Sensors | |
| US4909921A (en) | Electrochemical sensor facilitating repeated measurement | |
| JPH0374947B2 (en, 2012) | ||
| US4650561A (en) | Gas sensor | |
| JPH0116379B2 (en, 2012) | ||
| JP2007017312A (ja) | 半導体ガスセンサとその製造方法 | |
| JP2010517280A (ja) | 電子的構成部材 | |
| JPS62237347A (ja) | 電界効果トランジスタ型ガスセンサ− | |
| JPH0115015B2 (en, 2012) | ||
| WO2002077632A1 (fr) | Transistor a effet de champ | |
| JPS634657B2 (en, 2012) | ||
| JPWO2016125283A1 (ja) | ガスセンサ及びセンサ装置 | |
| CN113924477B (zh) | 对湿度和温度可忽略响应的气体传感器 | |
| JP2514280B2 (ja) | 集積化イオンセンサ | |
| Stoev et al. | An integrated gas sensor on silicon substrate with sensitive SnOx layer | |
| JP2546340B2 (ja) | 感湿素子およびその動作回路 | |
| JPH083476B2 (ja) | Fet型センサ | |
| JPH01152355A (ja) | pHセンサ | |
| JPH029306B2 (en, 2012) |