JPH0115928B2 - - Google Patents
Info
- Publication number
- JPH0115928B2 JPH0115928B2 JP56088143A JP8814381A JPH0115928B2 JP H0115928 B2 JPH0115928 B2 JP H0115928B2 JP 56088143 A JP56088143 A JP 56088143A JP 8814381 A JP8814381 A JP 8814381A JP H0115928 B2 JPH0115928 B2 JP H0115928B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetoresistive
- film
- thin film
- magnetoresistive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 description 8
- 239000000696 magnetic material Substances 0.000 description 6
- 229910000889 permalloy Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3143—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding
Description
【発明の詳細な説明】
本発明は薄膜で構成された磁気変換器に係り、
特に高密度磁気再生を高忠実度で行うことに適し
た薄膜磁気ヘツドに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic transducer composed of a thin film,
In particular, the present invention relates to a thin film magnetic head suitable for performing high-density magnetic reproduction with high fidelity.
磁気記録の分野において、磁気テープや磁気デ
イスクで代表される記録媒体上により多くの情報
を収容する技術が増々発展している。この情報の
記録再生を行う磁気変換器は、高密度記録を実現
するため磁気回路全体の大きさを小さくすると同
時に、磁気回路における磁気空隙を小さくする努
力がなされた。この要求を満たすべく蒸着、スパ
ツタ、フオトリソグラフイー等の薄膜技術を使つ
て磁気回路を構成する薄膜磁気ヘツドが注目され
てきている。 2. Description of the Related Art In the field of magnetic recording, techniques for storing more information on recording media such as magnetic tapes and magnetic disks are being developed more and more. Efforts have been made to reduce the overall size of the magnetic circuit and the magnetic gap in the magnetic circuit in order to realize high-density recording of the magnetic transducer that records and reproduces this information. In order to meet this demand, attention has been focused on thin film magnetic heads in which magnetic circuits are constructed using thin film techniques such as vapor deposition, sputtering, and photolithography.
第３図は従来の磁気抵抗効果型薄膜磁気ヘツド
の代表的な構造例における断面図を示す。 FIG. 3 shows a sectional view of a typical structural example of a conventional magnetoresistive thin film magnetic head.
AlO3，SiO2等の絶縁膜３が形成された基板１
上に、磁気抵抗効果を有するパーマロイ等の磁気
抵抗膜３２とその両側に絶縁膜３′をはさんでパ
ーマロイ等の磁性体３０が配置された構造であ
る。磁性体３０は、再生に必要のない磁束をバイ
パスすることにより高分解能とするためのもので
ある。しかし、狭磁気空隙化されると磁気抵抗膜
３２と磁性体３０との間の磁気抵抗が低下し再生
に必要のない磁束が磁性体３０から磁気抵抗膜３
２に洩れて分解能が低下する問題が生じる。 Substrate 1 on which insulating film 3 of AlO 3 , SiO 2 etc. is formed
It has a structure in which a magnetoresistive film 32 such as permalloy having a magnetoresistive effect and a magnetic material 30 such as permalloy are placed on both sides of the magnetoresistive film 32 with insulating films 3' sandwiched therebetween. The magnetic body 30 is used to achieve high resolution by bypassing magnetic flux that is not necessary for reproduction. However, when the magnetic gap is narrowed, the magnetic resistance between the magnetoresistive film 32 and the magnetic body 30 decreases, and magnetic flux that is not necessary for reproduction is transferred from the magnetic body 30 to the magnetoresistive film 30.
2, a problem arises in which the resolution deteriorates.
本発明の目的は、再生に必要のない磁束をバイ
パスするための磁性体からの磁気抵抗効果型素子
への磁束洩れを防止し、再生効率を向上させるこ
とである。 An object of the present invention is to improve reproduction efficiency by preventing leakage of magnetic flux from a magnetic body to a magnetoresistive element for bypassing magnetic flux not required for reproduction.
本発明の特徴とするところは、記録媒体からの
磁束変化を検出して電気信号に変換する磁気抵抗
効果型素子と、該磁気抵抗効果型素子の両側に絶
縁層を介して配置された磁性膜とを具備する磁気
抵抗効果型薄膜磁気ヘツドにおいて、前記磁性膜
の前記磁気抵抗効果型素子の対向面に外部回路と
接続されない導体層を配置するところにある。 The present invention is characterized by a magnetoresistive element that detects changes in magnetic flux from a recording medium and converts it into an electrical signal, and a magnetic film disposed on both sides of the magnetoresistive element with an insulating layer interposed therebetween. In the magnetoresistive thin film magnetic head, a conductor layer not connected to an external circuit is disposed on a surface of the magnetic film facing the magnetoresistive element.
第１図は本発明の第１の実施例を示すものであ
り、磁気抵抗効果を利用した再生専用磁気ヘツド
の断面図を示す。磁気抵抗効果を有する数百オン
グストロームの極薄膜３２とこの膜の両端からそ
の抵抗変化を取り出す電極（図示されていない）
をもち、これらを両側から絶縁体３′を介しては
さむように磁性体３０を配置し、再生に必要のな
い磁束をバイパスすることにより高分解能を得ら
れる。またこの種の再生ヘツドにおける空隙長
は、磁気抵抗膜３２と磁性体３０までの距離で決
まることは、Ｒ，Ｉ，Poffer IEEE Trans
Magn MAG10502（1974）に開示されている如く
である。このような磁気抵抗効果型磁気ヘツドに
おいて、磁性体３０の磁気抵抗膜３２の対向面に
導体３１を付加することにより、両サイドの磁性
体３０から、磁気抵抗膜３２に誘導される洩れ磁
束が減少し、よつて高分解能が得られる。 FIG. 1 shows a first embodiment of the present invention, and is a sectional view of a read-only magnetic head that utilizes the magnetoresistive effect. An ultra-thin film 32 of several hundred angstroms that has a magnetoresistive effect and electrodes (not shown) that extract the resistance change from both ends of this film.
High resolution can be obtained by arranging magnetic bodies 30 to sandwich these from both sides with insulators 3' in between, and bypassing magnetic flux not required for reproduction. Furthermore, the gap length in this type of read head is determined by the distance between the magnetoresistive film 32 and the magnetic material 30, as described by R, I, Poffer IEEE Trans.
As disclosed in Magn MAG10502 (1974). In such a magnetoresistive magnetic head, by adding a conductor 31 to the surface of the magnetic material 30 facing the magnetoresistive film 32, leakage magnetic flux induced from the magnetic material 30 on both sides to the magnetoresistive film 32 can be prevented. and thus high resolution can be obtained.
次に製造方法を説明する。 Next, the manufacturing method will be explained.
まず、フオトセラム等の基板上に、AlO3，
SiO2等の絶縁膜を数μｍの厚さにスパツタリン
グ等で形成する。次に、再生に必要のない磁束を
バイパスさせるために配置するパーマロイ等の磁
性体３０を厚さ2μｍスパツタリング等で形成し
た後、Cu等の電気良導体の導体３１を0.8μｍ形
成する。この後、絶縁体３′およびパーマロイ等
の磁気抵抗膜３２を蒸着、スパツタ等で形成し、
続いて絶縁膜３′を形成した後、上記と同様な方
法で導体３１を0.8μｍ、磁性体３０を2μｍの厚さ
で形成して完成する。 First, AlO 3 ,
An insulating film of SiO 2 or the like is formed to a thickness of several μm by sputtering or the like. Next, a magnetic material 30 such as permalloy arranged to bypass magnetic flux not required for reproduction is formed by sputtering to a thickness of 2 μm, and then a conductor 31 of a good electrical conductor such as Cu is formed to have a thickness of 0.8 μm. After that, an insulator 3' and a magnetoresistive film 32 such as permalloy are formed by vapor deposition, sputtering, etc.
Subsequently, after forming the insulating film 3', the conductor 31 is formed to a thickness of 0.8 μm and the magnetic body 30 is formed to a thickness of 2 μm in the same manner as described above.
第２図は磁気抵抗効果型磁気ヘツドの変形例で
あり、磁気抵抗膜３８の摩耗を防止するため、媒
体対向面３９より後部に引込めた構造を有してい
る。下部磁性膜３３に対して、上部磁性膜は磁気
抵抗膜３８の部分でギヤツプ３５を形成して３４
と３６の２つに分割された構造であり、この場合
導体３７を付加することにより磁性膜３４から３
３に漏洩する磁束を抑止しより多くの磁束を３８
に導く効果を有することによつて高感度高分解能
をはかることが出来ることも実験的に確認した。 FIG. 2 shows a modification of the magnetoresistive magnetic head, which has a structure in which the magnetoresistive film 38 is retracted to the rear of the medium facing surface 39 in order to prevent wear. The upper magnetic film forms a gap 35 at the magnetoresistive film 38 with respect to the lower magnetic film 33 .
In this case, by adding a conductor 37, the magnetic film 34 is divided into 3 and 36.
3. Suppress the magnetic flux leaking to 3 and generate more magnetic flux 38
It was also experimentally confirmed that high sensitivity and high resolution can be measured by having an effect that leads to
以上の説明の如く本発明は、従来型薄膜ヘツド
における欠点を導体膜を付加するという単純な工
程を追加することのみで改良され、再生効率の良
い磁気抵抗効果型薄膜磁気ヘツドを得ることがで
きる。 As explained above, the present invention improves the shortcomings of the conventional thin film head by simply adding a conductor film, thereby making it possible to obtain a magnetoresistive thin film magnetic head with high reproduction efficiency. .
第１図は本発明の第１の実施例を示す磁気抵抗
効果型薄膜磁気ヘツドの断面図、第２図は磁気抵
抗効果型薄膜磁気ヘツドの変形例において本発明
を適用した例を示す断面図、第３図は従来の磁気
抵抗効果型磁気ヘツドの断面図である。
３０，３３，３４，３６……磁性体、３′……
絶縁体、３１，３７……導体、３２，３８……磁
気抵抗膜。
FIG. 1 is a cross-sectional view of a magnetoresistive thin-film magnetic head showing a first embodiment of the present invention, and FIG. 2 is a cross-sectional view showing an example in which the present invention is applied to a modification of the magnetoresistive thin-film magnetic head. , FIG. 3 is a sectional view of a conventional magnetoresistive magnetic head. 30, 33, 34, 36...magnetic material, 3'...
Insulator, 31, 37... Conductor, 32, 38... Magnetoresistive film.
Claims (1)
に変換する磁気抵抗効果型素子と、該磁気抵抗効
果型素子の両側に絶縁層を介して配置された磁性
膜とを具備する磁気抵抗効果型薄膜磁気ヘツドに
おいて、前記磁性膜の前記磁気抵抗効果型素子の
対向面に外部回路と接続されない導体層を配置す
ることを特徴とする磁気抵抗効果型薄膜磁気ヘツ
ド。1. A magnetoresistive effect type comprising a magnetoresistive element that detects changes in magnetic flux from a recording medium and converts it into an electrical signal, and a magnetic film placed on both sides of the magnetoresistive element with an insulating layer interposed therebetween. 1. A magnetoresistive thin film magnetic head, characterized in that a conductive layer not connected to an external circuit is disposed on a surface of the magnetic film facing the magnetoresistive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8814381A JPS57203218A (en) | 1981-06-10 | 1981-06-10 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8814381A JPS57203218A (en) | 1981-06-10 | 1981-06-10 | Thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57203218A JPS57203218A (en) | 1982-12-13 |
| JPH0115928B2 true JPH0115928B2 (en) | 1989-03-22 |
Family
ID=13934706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8814381A Granted JPS57203218A (en) | 1981-06-10 | 1981-06-10 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57203218A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140217A (en) * | 1985-12-14 | 1987-06-23 | Sony Corp | Thin film magnetic head |
| JP2002516011A (en) * | 1995-12-18 | 2002-05-28 | クウォンタム・コーポレイション | Low inductance thin film head |
| US7538977B2 (en) | 2004-04-30 | 2009-05-26 | Hitachi Global Storage Technologies B.V. | Method and apparatus for providing diamagnetic flux focusing in a storage device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5233714A (en) * | 1975-09-10 | 1977-03-15 | Hitachi Ltd | Thin film magnetic head |
-
1981
- 1981-06-10 JP JP8814381A patent/JPS57203218A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5233714A (en) * | 1975-09-10 | 1977-03-15 | Hitachi Ltd | Thin film magnetic head |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57203218A (en) | 1982-12-13 |
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