JP3089886B2 - Method of manufacturing magnetoresistive head - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a magnetoresistive head used in a magnetic recording / reproducing apparatus.

[0002]

2. Description of the Related Art In recent years, an external recording device of a computer has
There is an increasing demand for smaller and larger capacities. In order to reduce the size and capacity of the external recording device using magnetic recording, it is necessary to improve the track density in addition to the linear recording density. At present, a magnetoresistive effect type magnetic head using a magnetoresistive element capable of obtaining a high output without depending on the medium speed and obtaining a high track density has been used. Hereinafter, a conventional magnetoresistive head using a magnetoresistive element and a method of manufacturing the same will be described.

FIGS. 7 and 8 are a configuration diagram and a perspective view, respectively, of a magneto-resistance effect type magnetic head viewed from the magnetic recording medium side. In the figure, reference numeral 1 denotes a lower shield having a width at least equal to the magnetic flux detection width of the magnetoresistive element and formed of a soft magnetic material such as permalloy or sendust by a vacuum film forming method or a plating method, or a soft magnetic material such as ferrite. Is used. The lower insulating layer 2 on the lower shield 1 has a role of magnetically separating the magnetoresistive element 3 and the lower shield 1 from each other.
An oxide such as SiO ₂ or Al ₂ O ₃ is formed by a vacuum film forming method such as evaporation or sputtering. The magnetoresistive element 3 is formed on the lower insulating layer 2 by a vacuum film forming method such as evaporation or sputtering. The magnetoresistive element section 3 is an element showing a change in resistance to an external magnetic field, and is made of an alloy of Fe-Ni or an alloy of Co-Ni. These films have a thickness of several tens nm or less in order to increase the sensitivity to the external magnetic field. In particular, a thin film is used. These thin films are formed by a vacuum deposition method such as a vacuum deposition method, a sputtering method, and an ion beam sputtering method.

[0004] A conductor layer 5 for supplying a current thereto and detecting a change in the voltage is in contact with the magnetoresistive element portion 3 at a portion outside the magnetic flux detection width. As the conductor layer 5, Au, Al, Cu, W or a laminated film thereof is used as a good conductor having a low resistance value, and is formed by a vacuum film forming method such as a vacuum evaporation method, a sputtering method, an ion beam sputtering method, and a CVD method. Filmed.

On the magnetoresistive element protective insulating layer 4 and the conductor layer 5, an upper insulating layer 6 is formed of SiO ₂ or Al ₂ O _3.
Is formed by vacuum deposition such as evaporation or sputtering. Thereafter, a soft magnetic material such as permalloy or sendust having a width at least as large as the magnetic flux detection width of the magnetoresistive element portion 3 as the upper shield 7 is deposited on the upper insulating layer 6 by a vacuum deposition method such as evaporation or sputtering or a plating method. Form a film. On the upper surface of the upper shield 7, a recording gap 8 is formed by vacuum deposition such as evaporation or sputtering of an oxide such as SiO ₂ or Al ₂ O ₃ . On the recording gap 8, a recording core 9 is formed by depositing a soft magnetic material such as permalloy or sendust by a vacuum deposition method such as evaporation or sputtering or a plating method, and is etched into a predetermined shape by a physical or chemical method. You.

The magnetic flux detection width of the magnetoresistive element portion 3 for reproducing is the width indicated by A, the recording core width for recording is B, and recording is performed in the magnetic flux detection area indicated by C of the recording core width B. Will be In this structure, the case where the distance between the magnetic shields which affects the frequency characteristics depending on the step caused by the thickness of the magnetoresistive element section 3 and the thickness of the conductor layer 5 and the magnetic flux detection width A of the magnetoresistive element section 3 is both D and E. Will do. Further, recording is performed in the magnetic flux detection area of the recording core width B and C, but the recording gap 8 is not straight as shown in the figure.

FIGS. 9 and 10 show a method of manufacturing these element portions.
As shown in FIG. As shown in FIG. 9A, a lower insulating layer 2 is provided on a lower shield 1, and a magnetoresistive element portion 3 is formed thereon, and a magnetoresistive element is formed as shown in FIGS. An element protection insulating layer 4 is provided, a conductor layer 5 is formed, then an upper insulating layer 6 is provided, and then an upper shield 7 is formed as shown in FIG. Next, as shown in FIGS. 10B and 10C, a recording gap 8 is formed thereon, and a recording core 9 is formed thereon.

FIG. 6A shows the result of recording and reproduction using the magnetoresistive magnetic head and measuring the linear recording density dependence of the output. As the magnetic recording medium, a 3.5-inch hard disk medium having a coercive force of 1600 Oe is used.
The results measured at 2 m / s and a flying height of 0.2 μm are shown. In this case, the distance between the shields is D = 0.8 μm and E = 0.9 μ.
m.

[0009]

However, in the above-mentioned conventional configuration, there are two types of distances between the magnetic shields indicated by D and E in FIG. 7 due to the step of the conductor layer 5 in the magnetic flux detecting region. The reproduced waveform is 2
Since it is obtained by superimposing different types of reproduced waveforms, the output is significantly reduced due to waveform interference at a high recording density. Further, the step F (FIG. 7) generated by the step of the magnetoresistive element portion 3 has a wide recording core 9 and, when the step is applied to the step, impairs the linearity of the recording gap together with the step on the magnetic flux detection area C, and also has a high recording density. Has a problem that the output is significantly reduced due to waveform interference.

The present invention solves the above-mentioned conventional problems, and can obtain high resolution even at a high recording density.
It is an object of the present invention to provide a method for manufacturing a magnetoresistive head .

[0011]

SUMMARY OF THE INVENTION For this purpose, the magnetic material of the present invention is used.
The manufacturing method of the resistance effect type magnetic head
A lower insulating layer provided on the lower insulating layer;
To form an intermediate insulating layer on the periphery of the magnetoresistive element section.
Forming a film at the same height as the magnetoresistive element,
A protective insulating layer of a magnetoresistive element is formed on the
On the element, the magnetic resistance
Form conductor layer with thickness equivalent to resistance element protection insulation layer
And, on the magnetoresistive element protection insulating layer and the conductor layer
The upper insulating layer and the upper shield are formed .

[0012]

According to the present invention, the distance between the magnetic shields in the magnetic flux detecting region of the magnetoresistive element can be kept constant, and the recording gap formed above the magnetic shield can be formed linearly. High resolution in density can be obtained.

[0013]

Next, embodiments of the present invention will be described with reference to the drawings.

1 and 2 are a configuration diagram and a perspective view, respectively, of a magnetoresistive head as viewed from the magnetic recording medium side. Reference numeral 1 denotes a lower shield having a width at least equal to the magnetic flux detection width of the magnetoresistive element portion 3 and formed of a soft magnetic material such as permalloy or sendust by a vacuum film forming method or a plating method, or a soft magnetic material such as ferrite. Used. The lower insulating layer 2 on the lower shield 1 has a role of magnetically separating the magnetoresistive element portion 3 and the lower shield 1 from each other.
An oxide such as SiO ₂ or Al ₂ O ₃ is formed by vacuum evaporation such as evaporation or sputtering. The magnetoresistive element 3 is formed on the lower insulating layer 2 by a vacuum film forming method such as evaporation or sputtering.

The magnetoresistive element section 3 is an element exhibiting a change in resistance to an external magnetic field, and is made of an alloy of Fe-Ni or an alloy of Co-Ni. A particularly thin film of nm or less is used. These thin films are formed by a vacuum deposition method such as a vacuum deposition method, a sputtering method, and an ion beam sputtering method. After that, the SiO 2 of the intermediate insulating layer 11 having the same thickness as the magnetoresistive element portion 3
An oxide such as ₂ or Al ₂ O ₃ is formed to the same height as the magnetoresistive element section 3 by a vacuum film forming method such as evaporation or sputtering.

A conductor layer 5 for supplying a current thereto and detecting a change in the voltage is in contact with the magnetoresistive element portion 3 at a portion outside the magnetic flux detection width. As the conductor layer 5, Au, Al, Cu, W or a laminated film thereof is used as a good conductor having a low resistance value, and is formed by a vacuum film forming method such as a vacuum evaporation method, a sputtering method, an ion beam sputtering method, and a CVD method. Filmed. This conductor layer 5 is formed at the same height as the magnetoresistive element protection insulating layer 4.

On the magnetoresistive element protective insulating layer 4 and the conductor layer 5, SiO ₂ or Al ₂ O ₃
Is formed by vacuum deposition such as evaporation or sputtering. Thereafter, a soft magnetic material such as permalloy, sendust or the like having a width at least as large as the magnetic flux detection width of the magnetoresistive element is formed as an upper shield 7 on the upper insulating layer 6 by a vacuum deposition method such as evaporation or sputtering or a plating method. I do. On the upper surface of the upper shield 7, a recording gap 8 is formed by vacuum deposition such as evaporation or sputtering of an oxide such as SiO ₂ or Al ₂ O ₃ . On the recording gap 8, a recording core 9 is formed by depositing a soft magnetic material such as permalloy or sendust by a vacuum deposition method such as evaporation or sputtering or a plating method, and is etched into a predetermined shape by a physical or chemical method. You.

In FIG. 1, the magnetic flux detection width of the magnetoresistive element portion 3 for reproducing is a width indicated by A, the recording core width for performing recording is B, and the recording is performed between the recording core width B and the upper shield 7. Is performed in the magnetic flux detection region indicated by C in FIG. In this structure, the distance between the magnetic shields which affects the frequency characteristics in the step A and the magnetic flux detection width A generated by the thickness of the magnetoresistive element portion 3 and the conductor layer 5 is a uniform distance D. Further, recording is performed in a magnetic flux detection area C having a recording core width B, and the recording gap 8 is straight as shown in the figure.

FIGS. 3, 4 and 5 show a method of manufacturing these element portions.
As shown in FIG. First, as shown in FIG. 3A, a lower insulating layer 2 is provided on a lower shield 1, a magnetoresistive element 3 is formed thereon, and the magnetoresistive element 3 is physically Alternatively, it is chemically etched. As the etching stopper 10, a photosensitive resin generally used in photolithography is used.

Next, as shown in FIG. 3B, an intermediate insulating layer 11 having a thickness equal to the thickness of the magnetoresistive element portion 3 is formed while the etching stopper 10 of the magnetoresistive element portion 3 is left. A film is formed at the same height as the part 3. After that, when the intermediate insulating layer 11 on the magnetoresistive element portion 3 is removed together with the etching stopper 10, a plane having no steps is obtained by the magnetoresistive element portion 3 and the intermediate insulating layer 11. Thereafter, as shown in FIG. 3C, a magnetoresistive element protection insulating layer 4 is formed. Next, as shown in FIG. 3D, an etching stopper 12 for regulating the magnetic flux detection width is formed.
Next, as shown in FIG.
Is physically or chemically etched. Next, as shown in FIG. 4B, the etching preventing material 12 of the magnetoresistive element protection insulating layer 4 is formed.
Is formed, a conductor layer 5 having a thickness equivalent to that of the magnetoresistive element protection insulating layer 4 is formed. Next, when the conductor layer 5 on the magnetoresistive element protection insulating layer 4 is removed together with the etching preventing material 12, a flat surface is obtained by the magnetoresistive element protection insulating layer 4 and the upper surface of the conductor layer 5 (FIG. 4C). Thereafter, an upper insulating layer 6 is provided (FIG. 5A), and an upper shield 7 is formed (FIG. 5A).
(B)). Next, a recording gap 8 is formed thereon, and a recording core 9 is formed thereon (FIG. 5C).

By employing such a method, a structure in which the distance between shields is uniform in the magnetic flux detection width A can be obtained, and the recording gap 8 formed above the shield can be formed linearly. FIG. 6B shows the result of recording / reproducing with this magnetoresistive magnetic head and measuring the linear recording density characteristics of the output. As the magnetic recording medium, a 3.5-inch hard disk medium having a coercive force of 1600 Oe is used.
The results of measurement at a peripheral speed of 12 m / s and a flying height of 0.2 μm are shown. In this case, the distance between the shields is D = 0.8 μm, E =
0.9 μm.

[0022]

According to the present invention, it is possible to manufacture a magnetoresistive effect type magnetic head in which the magnetic flux detecting region of the magnetoresistive element is linear and the recording gap formed thereon is also linear. Thus, a magnetoresistive head having high resolution at a high recording density can be realized.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a magnetoresistive head according to an embodiment of the present invention.

FIG. 2 is a perspective view of a magnetoresistive head according to an embodiment of the present invention.

3A is a view showing a manufacturing process of a magnetoresistive head according to an embodiment of the present invention; FIG. 3B is a diagram showing a manufacturing process of a magnetoresistive head according to an embodiment of the present invention; Manufacturing process diagram of magnetoresistive effect type magnetic head in one embodiment. (D) Manufacturing process diagram of magnetoresistive effect magnetic head in one embodiment of the present invention.

4A is a view showing a manufacturing process of a magnetoresistive head according to an embodiment of the present invention; FIG. 4B is a diagram showing a manufacturing process of a magnetoresistive head according to an embodiment of the present invention; Manufacturing process diagram of a magneto-resistance effect type magnetic head in one embodiment

5A is a view showing a manufacturing process of a magnetoresistive magnetic head according to an embodiment of the present invention; FIG. 5B is a diagram showing a manufacturing process of a magnetoresistive magnetic head according to an embodiment of the present invention; Manufacturing process diagram of a magneto-resistance effect type magnetic head in one embodiment

FIG. 6 is a characteristic diagram showing the linear recording density dependence of the output of a magnetoresistive head according to one embodiment of the present invention and a conventional example.

FIG. 7 is a configuration diagram of a conventional magnetoresistance effect type magnetic head.

FIG. 8 is a perspective view of a conventional magnetoresistive head.

9A is a manufacturing process diagram of a conventional magnetoresistive magnetic head, FIG. 9B is a manufacturing process diagram of a conventional magnetoresistive magnetic head, and FIG. 9C is a manufacturing process diagram of a conventional magnetoresistive magnetic head. d) Manufacturing process diagram of conventional magnetoresistive head

10A is a manufacturing process diagram of a conventional magnetoresistive magnetic head; FIG. 10B is a manufacturing process diagram of a conventional magnetoresistive magnetic head; FIG. 10C is a manufacturing process diagram of a conventional magnetoresistive magnetic head.

[Explanation of symbols]

 Reference Signs List 2 lower insulating layer 3 magnetoresistive element section 4 magnetoresistive element protective insulating layer 5 conductor layer 6 upper insulating layer 10, 12 etching inhibiting material 11 intermediate insulating layer

Claims (2)

(57) [Claims] A lower insulating layer is provided on a lower shield, a magnetoresistive element portion is formed on the lower insulating layer, and an intermediate insulating layer is formed on a periphery of the magnetoresistive element portion at the same height as the magnetoresistive element. A magnetoresistive element protection insulating layer is formed on the magnetoresistive element, and a thickness equivalent to the magnetoresistive element protective insulating layer is formed on the periphery of the magnetoresistive element protective insulating layer on the magnetoresistive element. A method of manufacturing a magnetoresistive magnetic head, comprising: forming a conductive layer having a magnetic layer; and forming an upper insulating layer and an upper shield on the protective insulating layer and the conductive layer. 2. A method for manufacturing a magneto-resistance effect type magnetic head according to claim 1, characterized in that to form the recording core layer and further magnetic gap layer on the upper shield.