JPH01157520A - プラズマ気相反応方法 - Google Patents

プラズマ気相反応方法

Info

Publication number
JPH01157520A
JPH01157520A JP63292203A JP29220388A JPH01157520A JP H01157520 A JPH01157520 A JP H01157520A JP 63292203 A JP63292203 A JP 63292203A JP 29220388 A JP29220388 A JP 29220388A JP H01157520 A JPH01157520 A JP H01157520A
Authority
JP
Japan
Prior art keywords
substrate
reactive gas
reaction
holder
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63292203A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0522376B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP63292203A priority Critical patent/JPH01157520A/ja
Publication of JPH01157520A publication Critical patent/JPH01157520A/ja
Publication of JPH0522376B2 publication Critical patent/JPH0522376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP63292203A 1988-11-18 1988-11-18 プラズマ気相反応方法 Granted JPH01157520A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63292203A JPH01157520A (ja) 1988-11-18 1988-11-18 プラズマ気相反応方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63292203A JPH01157520A (ja) 1988-11-18 1988-11-18 プラズマ気相反応方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57163730A Division JPS5952835A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置

Publications (2)

Publication Number Publication Date
JPH01157520A true JPH01157520A (ja) 1989-06-20
JPH0522376B2 JPH0522376B2 (enExample) 1993-03-29

Family

ID=17778864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63292203A Granted JPH01157520A (ja) 1988-11-18 1988-11-18 プラズマ気相反応方法

Country Status (1)

Country Link
JP (1) JPH01157520A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6756258B2 (en) 1991-06-19 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2022549811A (ja) * 2019-09-24 2022-11-29 ピコサン オーワイ 薄膜堆積装置用流体分配デバイス、関連装置、および方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPS5731130A (en) * 1980-07-31 1982-02-19 Matsushita Electric Ind Co Ltd Method and device for plasma chemical vapour deposition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPS5731130A (en) * 1980-07-31 1982-02-19 Matsushita Electric Ind Co Ltd Method and device for plasma chemical vapour deposition

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6756258B2 (en) 1991-06-19 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6797548B2 (en) 1991-06-19 2004-09-28 Semiconductor Energy Laboratory Co., Inc. Electro-optical device and thin film transistor and method for forming the same
US6847064B2 (en) 1991-06-19 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a thin film transistor
US7507991B2 (en) 1991-06-19 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
JP2022549811A (ja) * 2019-09-24 2022-11-29 ピコサン オーワイ 薄膜堆積装置用流体分配デバイス、関連装置、および方法
JP2025060843A (ja) * 2019-09-24 2025-04-10 ピコサン オーワイ 薄膜堆積装置用流体分配デバイス、関連装置、および方法

Also Published As

Publication number Publication date
JPH0522376B2 (enExample) 1993-03-29

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