JPH01155594A - Semiconductor memory circuit - Google Patents

Semiconductor memory circuit

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Publication number
JPH01155594A
JPH01155594A JP62313574A JP31357487A JPH01155594A JP H01155594 A JPH01155594 A JP H01155594A JP 62313574 A JP62313574 A JP 62313574A JP 31357487 A JP31357487 A JP 31357487A JP H01155594 A JPH01155594 A JP H01155594A
Authority
JP
Japan
Prior art keywords
prom
address
memory circuit
bit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62313574A
Other languages
Japanese (ja)
Inventor
Toru Henmi
逸見 亨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62313574A priority Critical patent/JPH01155594A/en
Publication of JPH01155594A publication Critical patent/JPH01155594A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To miniaturize a substrate and to reduce circuit parts by composing the title device of a PROM having 2<n>-type capacity, an address register having a PROM structure, and a comparing circuit to output a chip selecting signal for the PROM. CONSTITUTION:The device has a 2<n>-type capacity PROM 7 connected to (n) (n: positive integers)-bit address input terminals A0-A13 and a PROM structural address register 5 connected to the (n)-bit address input terminals A0-A13 and (m) (m: positive integers)-bit address input terminals A14 and A15 added besides A0-A13. Further, the device is composed of a comparing circuit 6 to compare address values from the (m)-bit additional address input terminals A14 and A15 with address values obtained from the address register 5 and to output the chip selecting signal for the PROM 7. Moreover, this comparing circuit 6 can be provided in the external part of the PROM 7. Thus, a circuit substrate can be miniaturized, and the number of the parts can be reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体メモリ回路に関し、特にPROMのアド
レス・デコードを行うためのチップセレクト機能を備え
た半導体メモリ回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor memory circuit, and more particularly to a semiconductor memory circuit having a chip select function for performing address decoding of a PROM.

〔従来の技術〕[Conventional technology]

従来、PROMからなる半導体メモリ回路において、ア
ドレス・デコードを行う場合、PROMとは別個にチッ
プセレクト回路を用いている。
Conventionally, when address decoding is performed in a semiconductor memory circuit consisting of a PROM, a chip select circuit is used separately from the PROM.

第3図は従来の一例を説明するための半導体メモリ回路
を構成するPROMの接続回路図である。
FIG. 3 is a connection circuit diagram of a PROM constituting a semiconductor memory circuit for explaining a conventional example.

第3図に示すように、かかるメモリ回路はCPU2に第
一のアドレスバス3aおよびデータバス4を介して接続
されるP ROM (16Kバイト)7とは別個に外部
にチップセレクト回路9を設けている。この例のように
四つのPROM7を接続する場合には、二本の第二のア
ドレスバス3bに示すように、アドレスの上位2ビツト
をチップセレクト回路9においてデコードし、四本のチ
ップセレクト信号線10にセレクト信号を発生していた
As shown in FIG. 3, this memory circuit includes an external chip select circuit 9 separate from a PROM (16K bytes) 7 connected to the CPU 2 via a first address bus 3a and a data bus 4. There is. When four PROMs 7 are connected as in this example, the upper two bits of the address are decoded in the chip select circuit 9, as shown by the two second address buses 3b, and the four chip select signal lines A select signal was generated at 10.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の半導体メモリ回路は、使用するPROM
の外部にチップセレクト回路を構成するため、実装スペ
ースや回路部品が余分に必要になるという欠点がある。
The conventional semiconductor memory circuit described above uses PROM
Since the chip select circuit is configured externally, there is a drawback that extra mounting space and circuit components are required.

本発明・の目的は、かかるPROMを使用する場合に外
部にチップセレクト回路を必要としない半導体メモリ回
路を提供することにある。
An object of the present invention is to provide a semiconductor memory circuit that does not require an external chip select circuit when using such a PROM.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体メモリ回路は、n(n+正の整数)ビッ
トのアドレス入力端子に接続される2fiバイト容量の
PROMと、前記nビットのアドレス入力端子とこの他
に追加されたm(m:正の整数)ビットのアドレス入力
端子とに接続されるPROM構造のアドレス・レジスタ
と、前記mビットの追加アドレス入力端子からのアドレ
ス値と前記アドレス・レジスタから得られるアドレス値
とを比較し前記PROMに対するチップセレクト信号を
出力する比較回路とを含んで構成される。
The semiconductor memory circuit of the present invention includes a 2fi byte capacity PROM connected to an n (n+positive integer) bit address input terminal, and an m (m: positive integer) added to the n bit address input terminal. The address register of the PROM structure connected to the address input terminal of the m-bit (integer) bits is compared with the address value obtained from the address register and the address value from the m-bit additional address input terminal, and the address value obtained from the address register is The device includes a comparison circuit that outputs a chip select signal.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の詳細な説明するための半導体メモリ回
路の接続構成図である。
FIG. 1 is a connection configuration diagram of a semiconductor memory circuit for explaining the present invention in detail.

第1図に示すように、半導体メモリ回路1はCPU2と
アドレスバス3およびデータバス4により接続され、こ
こでは半導体メモリ回路1に16にバイトPROMを使
用している。上の半導体メモリ回路1のアドレス・レジ
スタ(図示省略)はo o b ”であり、下の半導体
メモリ回路1のアドレス・レジスタ(図示省略)は“1
0b++である。この場合のメモリマツプは、上のメモ
リ回路が0〜3FFFHとなり、下のメモリ回路は80
008〜B F F F Mとなる。
As shown in FIG. 1, a semiconductor memory circuit 1 is connected to a CPU 2 by an address bus 3 and a data bus 4, and here, 16 byte PROMs are used in the semiconductor memory circuit 1. The address register (not shown) of the upper semiconductor memory circuit 1 is "o ob", and the address register (not shown) of the lower semiconductor memory circuit 1 is "1".
0b++. In this case, the memory map for the upper memory circuit is 0 to 3FFFH, and the lower memory circuit is 80 to 3FFFH.
008~BFFFFM.

第2図は、本発明の一実施例を説明するための単導体メ
モリ回路である。
FIG. 2 is a single conductor memory circuit for explaining one embodiment of the present invention.

第2図に示すように、かかる半導体メモリ回路1はAO
〜A15までの16ビツトのアドレス入力端子に接続さ
れるアドレス・レジスタ5と、上位2ビツトのアドレス
入力端子(A14゜A15)からのアドレス値とアドレ
ス・レジスタ5から得られるアドレス値とを比較しチッ
プセレクト信号8を出力する比較回路6と、AO〜A1
3 (14ビツト)のアドレス入力端子とDO〜D7(
8ビット)のデータバス端子とに接続されたPROM7
とを有している。このPROM7の容量は16K(2”
)バイトであり、またアドレス入力端子は前述のように
16ビツトである。
As shown in FIG. 2, such a semiconductor memory circuit 1 has an AO
The address register 5 connected to the 16-bit address input terminals up to A15 compares the address value from the upper 2-bit address input terminals (A14 to A15) with the address value obtained from the address register 5. A comparison circuit 6 that outputs a chip select signal 8, and AO to A1
3 (14 bits) address input terminal and DO~D7 (
PROM7 connected to the 8-bit) data bus terminal.
It has The capacity of this PROM7 is 16K (2”
) byte, and the address input terminal is 16 bits as described above.

アドレス・レジスタ5はPROM7の次のアドレスに配
置されていて、PROM7と同じ書き込み方法により書
き込まれる。この場合、アドレス・レジスタ5はアドレ
ス入力端子AO−A15のうちの上位2ビツトすなわち
A14.A15を記憶できるため、あらかじめPROM
7のアドレスの上位2ビットA14.’A15を書き込
んでおけば、比較回路6によりアドレス・レジスタ5に
記憶されているアドレスとアドレス入力端子AO〜A1
5から入力されたアドレスの上位2ビットA14.A1
5とが比較される。その結果、一致していれば、チップ
セレクト信号8を有効な論理で出力し、これによってP
ROM7が3u択される。
Address register 5 is located at the next address of PROM 7 and is written using the same writing method as PROM 7. In this case, the address register 5 selects the upper two bits of the address input terminals AO-A15, that is, A14. A15 can be stored in PROM in advance.
The upper two bits of address A14.7. 'If A15 is written, the address stored in the address register 5 by the comparison circuit 6 and the address input terminals AO to A1
The upper two bits of the address input from A14. A1
5 is compared. As a result, if they match, the chip select signal 8 is output with valid logic, thereby
ROM7 is selected as 3u.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明の半導体、メモリ回路はP
ROMの外部にチップセレクト回路を設けることができ
るため、回路基板の小型化や部品点数の削減などを実現
できろという効果がある。
As explained above, the semiconductor and memory circuit of the present invention have P
Since a chip select circuit can be provided outside the ROM, it is possible to miniaturize the circuit board and reduce the number of parts.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の詳細な説明するための半導体メモリ回
路の接続構成図、第2図は本発明の一実施例を説明する
ための半導体メモリ回路図、第3図は従来の一例を説明
するための半導体メモリ回路を構成するPROMの接続
回路図である。 1・・・半導体メモリ回路、2・・・CP U、3・・
・アドレスバス、4・・・データバス、5・・・アドレ
スレジスタ、6・・・比較回路、7・・・PROM(1
6にバイト)、8・・・チップセレクト信号線、Δ0〜
A15・・・アドレス入力端子、DO〜D7・・・デー
タバス端子。
FIG. 1 is a connection configuration diagram of a semiconductor memory circuit for explaining the present invention in detail, FIG. 2 is a semiconductor memory circuit diagram for explaining an embodiment of the present invention, and FIG. 3 is a conventional example. FIG. 3 is a connection circuit diagram of PROMs forming a semiconductor memory circuit for the purpose of implementing the present invention. 1... Semiconductor memory circuit, 2... CPU, 3...
・Address bus, 4...Data bus, 5...Address register, 6...Comparison circuit, 7...PROM (1
6 byte), 8...Chip select signal line, Δ0~
A15...address input terminal, DO~D7...data bus terminal.

Claims (1)

【特許請求の範囲】 n(n:正の整数)ビットのアドレス入力端子に接続さ
れる2nバイト容量のPROMと、前記nビットのアド
レス入力端子とこの他に追加されたm(m:正の整数)
ビットのアドレス入力端子とに接続されるPROM構造
のアドレス・レジスタと、前記 mビットの追加アドレス入力端子から のアドレス値と前記アドレス・レジスタから得られるア
ドレス値とを比較し前記PROMに対するチップセレク
ト信号を出力する比較回路とを有することを特徴とする
半導体メモリ回路。
[Claims] A PROM with a capacity of 2n bytes connected to an n (n: positive integer) bit address input terminal, and an m (m: positive integer) added to the n-bit address input terminal. integer)
A PROM-structured address register connected to the bit address input terminal compares the address value from the m-bit additional address input terminal with the address value obtained from the address register, and generates a chip select signal for the PROM. 1. A semiconductor memory circuit comprising: a comparison circuit that outputs .
JP62313574A 1987-12-11 1987-12-11 Semiconductor memory circuit Pending JPH01155594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62313574A JPH01155594A (en) 1987-12-11 1987-12-11 Semiconductor memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62313574A JPH01155594A (en) 1987-12-11 1987-12-11 Semiconductor memory circuit

Publications (1)

Publication Number Publication Date
JPH01155594A true JPH01155594A (en) 1989-06-19

Family

ID=18042949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62313574A Pending JPH01155594A (en) 1987-12-11 1987-12-11 Semiconductor memory circuit

Country Status (1)

Country Link
JP (1) JPH01155594A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992014217A1 (en) * 1991-02-05 1992-08-20 Omron Corporation Prom compatible processor and read/write method thereof
JPH05313997A (en) * 1992-05-08 1993-11-26 Nec Corp Read-only memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992014217A1 (en) * 1991-02-05 1992-08-20 Omron Corporation Prom compatible processor and read/write method thereof
JPH05313997A (en) * 1992-05-08 1993-11-26 Nec Corp Read-only memory device

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