JPH01149964A - プラズマcvd装置用シャワー電極 - Google Patents

プラズマcvd装置用シャワー電極

Info

Publication number
JPH01149964A
JPH01149964A JP30576787A JP30576787A JPH01149964A JP H01149964 A JPH01149964 A JP H01149964A JP 30576787 A JP30576787 A JP 30576787A JP 30576787 A JP30576787 A JP 30576787A JP H01149964 A JPH01149964 A JP H01149964A
Authority
JP
Japan
Prior art keywords
shower electrode
holes
electrode plate
gas
shower
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30576787A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0431023B2 (enrdf_load_stackoverflow
Inventor
Sadanori Ishida
禎則 石田
Yukio Komura
幸夫 香村
Takuya Nishimoto
卓矢 西本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP30576787A priority Critical patent/JPH01149964A/ja
Publication of JPH01149964A publication Critical patent/JPH01149964A/ja
Publication of JPH0431023B2 publication Critical patent/JPH0431023B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP30576787A 1987-12-04 1987-12-04 プラズマcvd装置用シャワー電極 Granted JPH01149964A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30576787A JPH01149964A (ja) 1987-12-04 1987-12-04 プラズマcvd装置用シャワー電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30576787A JPH01149964A (ja) 1987-12-04 1987-12-04 プラズマcvd装置用シャワー電極

Publications (2)

Publication Number Publication Date
JPH01149964A true JPH01149964A (ja) 1989-06-13
JPH0431023B2 JPH0431023B2 (enrdf_load_stackoverflow) 1992-05-25

Family

ID=17949102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30576787A Granted JPH01149964A (ja) 1987-12-04 1987-12-04 プラズマcvd装置用シャワー電極

Country Status (1)

Country Link
JP (1) JPH01149964A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03120371A (ja) * 1989-10-01 1991-05-22 Hirano Tecseed Co Ltd 薄膜製造法
GB2241250A (en) * 1990-01-26 1991-08-28 Fuji Electric Co Ltd RF plasma CVD employing an electrode with a shower supply surface
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
US5451290A (en) * 1989-08-14 1995-09-19 Applied Materials, Inc. Gas distribution system
US6379466B1 (en) 1992-01-17 2002-04-30 Applied Materials, Inc. Temperature controlled gas distribution plate
JP2004190132A (ja) * 2002-11-29 2004-07-08 Kyocera Corp ホットワイヤcvd装置
WO2006017136A3 (en) * 2004-07-12 2006-09-21 Applied Materials Inc Plasma uniformity control by gas diffuser curvature
KR100712172B1 (ko) * 2004-03-01 2007-04-27 캐논 가부시끼가이샤 플라스마 처리장치 및 그의 설계방법
CN100373535C (zh) * 2005-03-10 2008-03-05 三星电子株式会社 半导体制造装置
WO2010003093A3 (en) * 2008-07-03 2010-04-08 Applied Materials, Inc. Apparatuses for atomic layer deposition
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
EP2453244A1 (en) * 2010-11-15 2012-05-16 Rosemount Aerospace Inc. Static port apparatus
US9200368B2 (en) 2004-05-12 2015-12-01 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
JP2017028220A (ja) * 2015-07-28 2017-02-02 三菱マテリアル株式会社 プラズマ処理装置用電極板
US9580804B2 (en) 2007-06-22 2017-02-28 Applied Materials, Inc. Diffuser support

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451290A (en) * 1989-08-14 1995-09-19 Applied Materials, Inc. Gas distribution system
JPH03120371A (ja) * 1989-10-01 1991-05-22 Hirano Tecseed Co Ltd 薄膜製造法
GB2241250A (en) * 1990-01-26 1991-08-28 Fuji Electric Co Ltd RF plasma CVD employing an electrode with a shower supply surface
US6379466B1 (en) 1992-01-17 2002-04-30 Applied Materials, Inc. Temperature controlled gas distribution plate
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JP2004190132A (ja) * 2002-11-29 2004-07-08 Kyocera Corp ホットワイヤcvd装置
KR100712172B1 (ko) * 2004-03-01 2007-04-27 캐논 가부시끼가이샤 플라스마 처리장치 및 그의 설계방법
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US10312058B2 (en) 2004-05-12 2019-06-04 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US9200368B2 (en) 2004-05-12 2015-12-01 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US10262837B2 (en) 2004-05-12 2019-04-16 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
WO2006017136A3 (en) * 2004-07-12 2006-09-21 Applied Materials Inc Plasma uniformity control by gas diffuser curvature
CN100373535C (zh) * 2005-03-10 2008-03-05 三星电子株式会社 半导体制造装置
US9580804B2 (en) 2007-06-22 2017-02-28 Applied Materials, Inc. Diffuser support
WO2010003093A3 (en) * 2008-07-03 2010-04-08 Applied Materials, Inc. Apparatuses for atomic layer deposition
US8293015B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8747556B2 (en) 2008-07-03 2014-06-10 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US9017776B2 (en) 2008-07-03 2015-04-28 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
EP2453244A1 (en) * 2010-11-15 2012-05-16 Rosemount Aerospace Inc. Static port apparatus
US8365591B2 (en) 2010-11-15 2013-02-05 Rosemount Aerospace Inc. Static port apparatus
JP2017028220A (ja) * 2015-07-28 2017-02-02 三菱マテリアル株式会社 プラズマ処理装置用電極板

Also Published As

Publication number Publication date
JPH0431023B2 (enrdf_load_stackoverflow) 1992-05-25

Similar Documents

Publication Publication Date Title
JPH01149964A (ja) プラズマcvd装置用シャワー電極
US5439524A (en) Plasma processing apparatus
US4612077A (en) Electrode for plasma etching system
TW423072B (en) Electrode for plasma processes and method for manufacture and use thereof
US4590042A (en) Plasma reactor having slotted manifold
CN101443474B (zh) 改善大面积基板均匀性的方法和设备
KR890702414A (ko) 프라즈마 cvd에 의한 박막형성방법 및 그 장치
JP2005268396A (ja) 真空処理装置
TW200949934A (en) Shower head and substrate processing apparatus
JPS6269620A (ja) プラズマ処理装置
JP2758845B2 (ja) プラズマcvd装置
US6506255B2 (en) Apparatus for supplying gas used in semiconductor processing
JPH02234419A (ja) プラズマ電極
US20190376184A1 (en) Chemical vapor deposition shower head for uniform gas distribution
JPH05148634A (ja) スパツタリング装置
JPS6324623A (ja) プラズマ処理装置
JPH02184022A (ja) Cvd電極
JPS6260875A (ja) プラズマcvd装置
JPS6316625A (ja) ドライエツチング用電極
JPS6214226B2 (enrdf_load_stackoverflow)
JPS57100720A (en) Manufacture of amorphous semiconductor film
JPH01168021A (ja) アウターワークホルダー
JPH0517872A (ja) 薄膜形成装置
JPS60123033A (ja) プラズマ処理装置
JPS622544A (ja) 無声放電型ガスプラズマ処理装置

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080525

Year of fee payment: 16