JPH0114706B2 - - Google Patents
Info
- Publication number
- JPH0114706B2 JPH0114706B2 JP57171673A JP17167382A JPH0114706B2 JP H0114706 B2 JPH0114706 B2 JP H0114706B2 JP 57171673 A JP57171673 A JP 57171673A JP 17167382 A JP17167382 A JP 17167382A JP H0114706 B2 JPH0114706 B2 JP H0114706B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- type mos
- mos transistor
- basic cell
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 230000015654 memory Effects 0.000 description 26
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57171673A JPS5961047A (ja) | 1982-09-29 | 1982-09-29 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57171673A JPS5961047A (ja) | 1982-09-29 | 1982-09-29 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5961047A JPS5961047A (ja) | 1984-04-07 |
JPH0114706B2 true JPH0114706B2 (ko) | 1989-03-14 |
Family
ID=15927569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57171673A Granted JPS5961047A (ja) | 1982-09-29 | 1982-09-29 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5961047A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4884115A (en) * | 1987-02-27 | 1989-11-28 | Siemens Aktiengesellschaft | Basic cell for a gate array arrangement in CMOS Technology |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5864047A (ja) * | 1981-10-13 | 1983-04-16 | Nec Corp | マスタ−スライス半導体集積回路装置 |
JPS5897847A (ja) * | 1981-12-08 | 1983-06-10 | Nec Corp | 集積回路装置 |
-
1982
- 1982-09-29 JP JP57171673A patent/JPS5961047A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5864047A (ja) * | 1981-10-13 | 1983-04-16 | Nec Corp | マスタ−スライス半導体集積回路装置 |
JPS5897847A (ja) * | 1981-12-08 | 1983-06-10 | Nec Corp | 集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5961047A (ja) | 1984-04-07 |
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