JPH0114706B2 - - Google Patents

Info

Publication number
JPH0114706B2
JPH0114706B2 JP57171673A JP17167382A JPH0114706B2 JP H0114706 B2 JPH0114706 B2 JP H0114706B2 JP 57171673 A JP57171673 A JP 57171673A JP 17167382 A JP17167382 A JP 17167382A JP H0114706 B2 JPH0114706 B2 JP H0114706B2
Authority
JP
Japan
Prior art keywords
conductivity type
type mos
mos transistor
basic cell
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57171673A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5961047A (ja
Inventor
Michihiro Ikeda
Shigeo Kuboki
Yoji Nishio
Ikuro Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Industry and Control Solutions Co Ltd
Original Assignee
Hitachi Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Engineering Co Ltd
Priority to JP57171673A priority Critical patent/JPS5961047A/ja
Publication of JPS5961047A publication Critical patent/JPS5961047A/ja
Publication of JPH0114706B2 publication Critical patent/JPH0114706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP57171673A 1982-09-29 1982-09-29 半導体集積回路装置 Granted JPS5961047A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57171673A JPS5961047A (ja) 1982-09-29 1982-09-29 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57171673A JPS5961047A (ja) 1982-09-29 1982-09-29 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5961047A JPS5961047A (ja) 1984-04-07
JPH0114706B2 true JPH0114706B2 (enrdf_load_stackoverflow) 1989-03-14

Family

ID=15927569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57171673A Granted JPS5961047A (ja) 1982-09-29 1982-09-29 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5961047A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4884115A (en) * 1987-02-27 1989-11-28 Siemens Aktiengesellschaft Basic cell for a gate array arrangement in CMOS Technology

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864047A (ja) * 1981-10-13 1983-04-16 Nec Corp マスタ−スライス半導体集積回路装置
JPS5897847A (ja) * 1981-12-08 1983-06-10 Nec Corp 集積回路装置

Also Published As

Publication number Publication date
JPS5961047A (ja) 1984-04-07

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