JPH01146556U - - Google Patents
Info
- Publication number
- JPH01146556U JPH01146556U JP4410788U JP4410788U JPH01146556U JP H01146556 U JPH01146556 U JP H01146556U JP 4410788 U JP4410788 U JP 4410788U JP 4410788 U JP4410788 U JP 4410788U JP H01146556 U JPH01146556 U JP H01146556U
- Authority
- JP
- Japan
- Prior art keywords
- impurity region
- type
- type impurity
- protection diodes
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案の一実施例に係る半導体装置の
要部の平面図、第２図は保護ダイオードを備えた
ＯＲ回路の構成図、第３図、第４図、第５図はそ
れぞれ従来の保護ダイオードを備えた半導体装置
の平面図、その要部の平面図、その断面図である
。
１，２…ゲート電極、３…ソース電極、４，５
…保護ダイオード、４ａ，５ａ…接合面、７，９
…ｎ型不純物領域、８…ｐ型不純物領域である。
FIG. 1 is a plan view of the main parts of a semiconductor device according to an embodiment of the present invention, FIG. 2 is a configuration diagram of an OR circuit equipped with a protection diode, and FIGS. 3, 4, and 5 are respectively conventional FIG. 1 is a plan view of a semiconductor device including a protection diode, a plan view of a main part thereof, and a cross-sectional view thereof. 1, 2... Gate electrode, 3... Source electrode, 4, 5
...protection diode, 4a, 5a...junction surface, 7, 9
. . . n-type impurity region; 8 . . . p-type impurity region.
Claims (1)
保護ダイオードを互いに向きを逆にして直列に設
け、該保護ダイオードのｎ型不純物領域とｐ型不
純物領域との接合面を非直線としたことを特徴と
するＭＥＳ型化合物半導体装置。 Two pn-type protection diodes are provided in series between the gate electrode and the source electrode with their directions reversed, and the junction surface between the n-type impurity region and the p-type impurity region of the protection diodes is made non-linear. Features of MES type compound semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988044107U JP2547759Y2 (en) | 1988-03-31 | 1988-03-31 | MES type compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988044107U JP2547759Y2 (en) | 1988-03-31 | 1988-03-31 | MES type compound semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01146556U true JPH01146556U (en) | 1989-10-09 |
| JP2547759Y2 JP2547759Y2 (en) | 1997-09-17 |
Family
ID=31270482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988044107U Expired - Lifetime JP2547759Y2 (en) | 1988-03-31 | 1988-03-31 | MES type compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2547759Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62298184A (en) * | 1986-06-17 | 1987-12-25 | Sanyo Electric Co Ltd | Protecting diode of semiconductor device |
-
1988
- 1988-03-31 JP JP1988044107U patent/JP2547759Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62298184A (en) * | 1986-06-17 | 1987-12-25 | Sanyo Electric Co Ltd | Protecting diode of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2547759Y2 (en) | 1997-09-17 |