JPH0365262U - - Google Patents
Info
- Publication number
- JPH0365262U JPH0365262U JP12805789U JP12805789U JPH0365262U JP H0365262 U JPH0365262 U JP H0365262U JP 12805789 U JP12805789 U JP 12805789U JP 12805789 U JP12805789 U JP 12805789U JP H0365262 U JPH0365262 U JP H0365262U
- Authority
- JP
- Japan
- Prior art keywords
- zener diode
- built
- power mos
- type region
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002457 bidirectional effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第１図は、この考案の一実施例のツエナーダイ
オード内蔵パワーＭＯＳ ＦＥＴにおける双方向
性ツエナーダイオードの一部を上から見た断面図
、第２図は、従来のツエナーダイオード内蔵パワ
ーＭＯＳ ＦＥＴの斜視断面図、第３図は、従来
の双方向性ツエナーダイオードの一部を上から見
た断面図である。
１……基本セル、２……ベース層、３……ウエ
ル層、４……ポリシリゲート、５……Ｓｉサブス
トレート、６……エピタキシヤル部、７……ソー
スアルミ、８……ゲートアルミ、９……双方向性
ツエナーダイオード、１０……酸化膜。
Fig. 1 is a cross-sectional view of a part of the bidirectional Zener diode in a power MOS FET with a built-in Zener diode according to an embodiment of this invention, and Fig. 2 is a perspective view of a conventional power MOS FET with a built-in Zener diode. The cross-sectional view, FIG. 3, is a top-down cross-sectional view of a portion of a conventional bidirectional Zener diode. DESCRIPTION OF SYMBOLS 1... Basic cell, 2... Base layer, 3... Well layer, 4... Polysiligate, 5... Si substrate, 6... Epitaxial part, 7... Source aluminum, 8... Gate aluminum, 9 ...Bidirectional Zener diode, 10...Oxide film.
Claims (1)
ワーＭＯＳ ＦＥＴにおいて、 ゲート保護用ツエナーダイオードのＰ型領域部
とＮ型領域部の接合部を非平面状にしたことを特
徴とするツエナーダイオード内蔵パワーＭＯＳ
ＦＥＴ。[Claim for Utility Model Registration] A power MOS FET with a built-in Zener diode for gate protection, characterized in that the junction between the P-type region and the N-type region of the Zener diode for gate protection is made into a non-planar shape. Power MOS with built-in Zener diode
FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12805789U JPH0365262U (en) | 1989-10-31 | 1989-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12805789U JPH0365262U (en) | 1989-10-31 | 1989-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0365262U true JPH0365262U (en) | 1991-06-25 |
Family
ID=31675789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12805789U Pending JPH0365262U (en) | 1989-10-31 | 1989-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0365262U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004055796A (en) * | 2002-07-19 | 2004-02-19 | Mitsubishi Electric Corp | Semiconductor device |
| EP1702768A2 (en) | 2001-05-23 | 2006-09-20 | Araya Industrial Co., Ltd. | Hub for wheel and wheel being equipped with said hub |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350070A (en) * | 1986-08-19 | 1988-03-02 | Matsushita Electronics Corp | Longitudinal mos field effect transistor |
-
1989
- 1989-10-31 JP JP12805789U patent/JPH0365262U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350070A (en) * | 1986-08-19 | 1988-03-02 | Matsushita Electronics Corp | Longitudinal mos field effect transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1702768A2 (en) | 2001-05-23 | 2006-09-20 | Araya Industrial Co., Ltd. | Hub for wheel and wheel being equipped with said hub |
| JP2004055796A (en) * | 2002-07-19 | 2004-02-19 | Mitsubishi Electric Corp | Semiconductor device |
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