JPH01143120U - - Google Patents
Info
- Publication number
- JPH01143120U JPH01143120U JP3917188U JP3917188U JPH01143120U JP H01143120 U JPH01143120 U JP H01143120U JP 3917188 U JP3917188 U JP 3917188U JP 3917188 U JP3917188 U JP 3917188U JP H01143120 U JPH01143120 U JP H01143120U
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- diode
- contact opening
- hole contact
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の一実施例を示すスルーホール
・コンタクト開孔部近傍の断面図、第２図は従来
の半導体装置のスルーホール・コンタクト開孔部
近傍の断面図である。
１…シリコン半導体基板、２…フイールド熱酸
化シリコン膜、３…窒化シリコン膜、４…絶縁保
護膜、５…スルーホール・コンタクト開孔部、６
…アルミ配線。
FIG. 1 is a cross-sectional view of the vicinity of a through-hole contact opening showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the vicinity of a through-hole contact opening of a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1...Silicon semiconductor substrate, 2...Field thermal oxidation silicon film, 3...Silicon nitride film, 4...Insulating protection film, 5...Through hole contact opening, 6
...Aluminum wiring.
Claims (1)
おいて、前記抵抗及びダイオードの絶縁保護膜が
スルーホール・コンタクト開孔部の外縁にとどめ
られてパターン形成されることを特徴とする半導
体装置。 1. A semiconductor device incorporating a resistor, a diode, etc., characterized in that the insulating protective film of the resistor and diode is patterned so as to remain at the outer edge of a through-hole contact opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3917188U JPH01143120U (en) | 1988-03-24 | 1988-03-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3917188U JPH01143120U (en) | 1988-03-24 | 1988-03-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01143120U true JPH01143120U (en) | 1989-10-02 |
Family
ID=31265684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3917188U Pending JPH01143120U (en) | 1988-03-24 | 1988-03-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01143120U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60192330A (en) * | 1984-03-14 | 1985-09-30 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS61141130A (en) * | 1984-12-13 | 1986-06-28 | Nippon Precision Saakitsutsu Kk | Manufacture of semiconductor device |
-
1988
- 1988-03-24 JP JP3917188U patent/JPH01143120U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60192330A (en) * | 1984-03-14 | 1985-09-30 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS61141130A (en) * | 1984-12-13 | 1986-06-28 | Nippon Precision Saakitsutsu Kk | Manufacture of semiconductor device |