JPH01140053A - 半導体電界効果形イオンセンサ - Google Patents
半導体電界効果形イオンセンサInfo
- Publication number
- JPH01140053A JPH01140053A JP62296012A JP29601287A JPH01140053A JP H01140053 A JPH01140053 A JP H01140053A JP 62296012 A JP62296012 A JP 62296012A JP 29601287 A JP29601287 A JP 29601287A JP H01140053 A JPH01140053 A JP H01140053A
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- electrode
- sensor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 7
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract description 6
- 239000005297 pyrex Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract description 2
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62296012A JPH01140053A (ja) | 1987-11-26 | 1987-11-26 | 半導体電界効果形イオンセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62296012A JPH01140053A (ja) | 1987-11-26 | 1987-11-26 | 半導体電界効果形イオンセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01140053A true JPH01140053A (ja) | 1989-06-01 |
| JPH0549187B2 JPH0549187B2 (enrdf_load_stackoverflow) | 1993-07-23 |
Family
ID=17827977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62296012A Granted JPH01140053A (ja) | 1987-11-26 | 1987-11-26 | 半導体電界効果形イオンセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01140053A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010511888A (ja) * | 2006-12-04 | 2010-04-15 | 韓國電子通信研究院 | バイオセンサ及びその製造方法 |
-
1987
- 1987-11-26 JP JP62296012A patent/JPH01140053A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010511888A (ja) * | 2006-12-04 | 2010-04-15 | 韓國電子通信研究院 | バイオセンサ及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0549187B2 (enrdf_load_stackoverflow) | 1993-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chin et al. | A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process | |
| US6387724B1 (en) | Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface | |
| US20140061728A1 (en) | Gate Biasing Electrodes For FET Sensors | |
| TWI253174B (en) | Ion sensitive field effect transistor and fabrication method of the same | |
| JPS5949542B2 (ja) | 流体中の特定物質の濃度を測定するためのセンサ | |
| JPH01140053A (ja) | 半導体電界効果形イオンセンサ | |
| US10254244B1 (en) | Biosensor having a sensing gate dielectric and a back gate dielectric | |
| JPH027423B2 (enrdf_load_stackoverflow) | ||
| JPH0518935A (ja) | ダイヤモンド薄膜イオンセンサ | |
| JPH06288972A (ja) | イオンセンサ及びイオン測定方法 | |
| JPH0740607B2 (ja) | 薄膜トランジスタの製造方法 | |
| EP0190005A2 (en) | Ambient sensing devices with isolation | |
| JPH01116442A (ja) | 半導体イオンセンサ | |
| JPH029306B2 (enrdf_load_stackoverflow) | ||
| JP2988020B2 (ja) | 半導体イオンセンサ | |
| KR101202015B1 (ko) | ＳＯＩ기판을 이용한 ｐＨ센서 및 그 제작방법 | |
| CN109211897B (zh) | 离子敏感场效应晶体管及其制备方法 | |
| JPS60181645A (ja) | 複合センサ及びその製造方法 | |
| JP2000187016A (ja) | 半導体イオンセンサ | |
| JPH0366184A (ja) | 半導体磁気センサ | |
| JPH04146628A (ja) | 薄膜半導体装置 | |
| JP2694818B2 (ja) | 半導体電界効果型バイオセンサおよびその製造方法 | |
| JPS6239756A (ja) | 半導体マルチバイオセンサ | |
| JPS59100851A (ja) | 半導体イオンセンサ | |
| JPH0725688Y2 (ja) | 半導体イオンセンサ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070723 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080723 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080723 Year of fee payment: 15 |