JPH01138761A - Formation of very fine electrode - Google Patents

Abstract

PURPOSE:To realize a low-resistance electrode whereto off-setting may be applied with facility by a method wherein a positive resist layer is formed on a negative resist pattern formation surface and the positive resist is so exposed to light and developed that the negative resist edge and the substrate surface may be exposed visible. CONSTITUTION:A negative resist 11 is applied to a substrate, and exposure and development are accomplished for the formation of a desired resist pattern. A positive resist 12 is applied to cover the negative resist 11. The positive resist 12 is exposed to light and developed, which involves the edge of the negative resist 11, for the formation of a double-crank resist pattern. A process follows where in a metal layer 13 is directionally formed by evaporation for the formation of an electrode. The vapor-deposited metal layer 13 is removed from on the resists 11 and 12 in an organic liquid or oxygen plasma for the realization of a double-crank electrode 14.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a microelectrode, and more particularly to a method for forming an F-shaped microelectrode with reduced resistance.

[Prior art] Conventionally, methods for forming electrodes that reduce the resistance of fine electrodes have been proposed.
The method described in Patent Publication U31-77370q Pattern Formation X is known. The formation method described in the above publication was used as the second method.
Shown in Figures (a) to (C). That is, first, as shown in FIG. 2(a), a low-sensitivity positive resist 21 is coated on the substrate 20, and then a high-sensitivity positive resist 22 is coated on the low-sensitivity positive resist 21. Exposure is performed by an electron beam 23. Next, development was performed to form a pine mushroom-shaped resist pattern 17, after which a metal 24 was vapor-deposited as shown in FIG.
2 and the vapor deposited metal 24 on the resists 1 to 22, a mushroom-shaped electrode 25 is formed as shown in FIG. 2(C), and the electrode resistance is reduced. .

[Problem to be Solved by the Invention 1] Although the above-mentioned shape and formation are improved compared to electrodes formed using conventional single-layer resist in that the resistance of the electrode 4* can be reduced, it is not possible to use a high-sensitivity regimen. 1, the electrodes protrude to both sides, making it difficult to apply an offset.

An object of the present invention is to eliminate such conventional drawbacks and provide a method for forming an electrode that is easy to offset and has reduced resistance.

[Means for Solving and Overcoming Problems 1] The present invention comprises a step of forming a predetermined pattern using a negative resist layer 1 on a semiconductor substrate, and a step of forming a positive resist layer on the pattern formation surface. A step of exposing and developing the positive resist 1 to form a predetermined pattern so that both the negative resist surface including the ends of the negative resist 1 and the substrate surface are exposed 11 to light, and forming a predetermined pattern on the pattern forming surface. A step of evaporating metal on the resist with directionality, and removing the metal on each of the resists and the positive resist to form a cross section [-
A method for forming a microelectrode is characterized by comprising a step of forming a letter-shaped metal pattern.

[Operation 1] In the present invention, a single layer of positive resist is exposed so that both the negative resist pattern and the semiconductor substrate surface are exposed. An overhang occurs in the direction, allowing the formation of a low-resistance electrode.On the other hand, since there is no overhang of the electrode in the direction where there is no negative resist, it is easier to offset in this direction. Even if the width of the pattern that can expose the resist cannot be made small, the electrode width at the portion in contact with the substrate can be made small.

[Example] Next, an example of the present invention will be described with reference to the drawings.

FIGS. 1(a) to 1(e) are schematic sectional views showing an example of the process according to the present invention. First, as shown in FIG.
After applying MS (R), exposure and development are performed to form a predetermined resist pattern.

Next, as shown in FIG. 1(b), the negative resist 1 is applied.
1, and apply a positive cast film 1-12 (for example, MP-2415 manufactured by Silapray Co., Ltd.). Then the first
As shown in Figure (C), by exposing the positive resist 12 so as to include the ends of the negative resist 11 and performing S, a pattern can be obtained on the resist 1 of the [type]. Next, as shown in FIG.
e) Organic cleaning or tmN (02)
By removing the deposited metal 13 on the regimes 1-11 and 12 and the resists 11 and 12 using plasma, the ['-type electrode 14 can be made 1q.

[Effects of the Invention] As explained above, in the present invention, since an overhang of the electrode can be formed on one side, a low-resistance electric current can be formed. Since there is no overhang of the 44-inch, it is easier to offset in this direction. In addition, by controlling the speed at which the exposure pattern on the positive resist 1 and the negative resist pattern are brought together, the width of the electrode in contact with the substrate can be adjusted.

[Brief explanation of the drawing]

Fig. 1 is a schematic sectional view showing an example of the process according to the present invention, and Fig. 2 is a schematic sectional view showing an example of the electrode forming process according to the conventional example. 10.20...Substrate 11...Negative Type resist 12...Positive type resist l-13, 24...Vapor deposited metal 14.25...Electrode 21...Low sensitivity positive type resist 22...High sensitivity positive type resist 23...Electronic line

Claims (1)

[Claims] (1) A step of forming a predetermined pattern using a negative resist on a semiconductor substrate, a step of forming a positive resist layer on the pattern formation surface, and a negative resist surface including the negative resist end and the substrate. a step of exposing and developing the positive resist to form a predetermined pattern so that both surfaces are exposed; a step of evaporating metal with directionality on the pattern forming surface; 1. A method for forming a microelectrode, comprising the step of removing metal on a mold resist to form a metal pattern having a T-shaped cross section.