JPH01120359U - - Google Patents
Info
- Publication number
- JPH01120359U JPH01120359U JP1501788U JP1501788U JPH01120359U JP H01120359 U JPH01120359 U JP H01120359U JP 1501788 U JP1501788 U JP 1501788U JP 1501788 U JP1501788 U JP 1501788U JP H01120359 U JPH01120359 U JP H01120359U
- Authority
- JP
- Japan
- Prior art keywords
- heat
- generates
- element portion
- semiconductor device
- small amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第1図乃至第3図は本考案の一実施例の構造を
示す図、第4図は実施例に於ける熱の流れを示す
図、第5図は従来に於けるパワーICの構造を示
す図である。
11,12…パワーMOSFET部、12…論
理回路部、41…チツプ、43…ヒートシンク。
Figures 1 to 3 are diagrams showing the structure of an embodiment of the present invention, Figure 4 is a diagram showing the flow of heat in the embodiment, and Figure 5 is a diagram showing the structure of a conventional power IC. It is a diagram. 11, 12...power MOSFET section, 12...logic circuit section, 41...chip, 43...heat sink.
Claims (1)
とが同一基板上に形成された半導体装置において
、 前記発熱量の少ない素子部を前記基板の中心部
に配置したことを特徴とする半導体装置。[Claims for Utility Model Registration] In a semiconductor device in which an element portion that generates a large amount of heat and an element portion that generates a small amount of heat are formed on the same substrate, the element portion that generates a small amount of heat is arranged in the center of the substrate. A semiconductor device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1501788U JPH01120359U (en) | 1988-02-05 | 1988-02-05 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1501788U JPH01120359U (en) | 1988-02-05 | 1988-02-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01120359U true JPH01120359U (en) | 1989-08-15 |
Family
ID=31226705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1501788U Pending JPH01120359U (en) | 1988-02-05 | 1988-02-05 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01120359U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244487A (en) * | 2008-04-21 | 2008-10-09 | Renesas Technology Corp | Compound type mosfet |
-
1988
- 1988-02-05 JP JP1501788U patent/JPH01120359U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244487A (en) * | 2008-04-21 | 2008-10-09 | Renesas Technology Corp | Compound type mosfet |