JPH01117329A - Manufacture of insulating film for thin film device - Google Patents

Abstract

PURPOSE:To enable an insulating film in high flatness to be formed by a method wherein the second resist layer to be baked at the temperature lower than that in the first resist layer is formed on the first resist layer, and a metallic film is formed on a substrate and then the second resist layer is resolved to form wiring patterns, and the insulating film is formed on the wiring patterns and the first resist layer. CONSTITUTION:The second resist layer 12 is formed on the first resist layer 11 and then a metallic film 13 in almost the same thickness as that of the first resist layer 11 is formed on a substrate 10 including the second resist layer 12. Next, the substrate 10 is immersed in acetone to resolve the resist layer 12 of the substrate 10 so that the metallic film 13 may be lift off to form wiring patterns 14 comprising the first resist layer 11 and the metallic film 13 almost flatly on said substrate 10. Then, an interlayer insulating film 15 to be baked at the temperature lower than that the resist layer 11 is formed on the resist layer 11 and the wiring patterns while the other wiring patterns are successively formed in laminated layers on the insulating 15.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) This invention is applicable to thin film coils such as laminated thin film coils. ! The present invention relates to an insulating film manufacturing method for an insulating film manufacturing method.

(Prior Art) Generally, when manufacturing an all-in-one device, a plurality of wiring patterns are sequentially formed in a laminated structure, so there is a demand for flattening between the wiring patterns. This is because when forming a wiring pattern in a layered structure, if there is a step in the underlying layer, there is a risk that the wiring pattern will break or a short circuit will occur in the living room. This is because it becomes non-uniform, making it difficult to achieve high density. Furthermore, if the interlayers of the wiring pattern are not flat, the device characteristics will deteriorate, especially
In magnetic thin film elements that are prone to defects due to deterioration in magnetic properties, deterioration in magnetic properties due to differences in level poses a major problem.

For this reason, layers have conventionally been flattened by techniques such as the resin coating method shown in FIG. 2, the etch pack method shown in FIG. 3, and the bias sputtering method shown in FIG. 4.

That is, in the resin coating method shown in FIG. 2, a wiring pattern 2a is formed on a substrate 1a, and the substrate 1 including this wiring pattern 2a is
The planarization of the insulating film 3a is achieved by applying a resist or a thermosetting resin such as polyimide on the insulating film 3a.

In the etch-back method shown in FIG. 3, an insulating film 3 is formed on a substrate 1b on which a wiring pattern 2b is formed by a dry process such as sputtering.
b (see figure (a)), and furthermore, this insulating film 3
After applying a resist 4a on the insulation layer 4a to reduce the level difference, as shown in FIG.
It is etched and formed flat so that the etching grade of a is the same, and 3amiconducto
rWorld 1984.1 "Planarization Technique by Or Etch-back Method".

The bias sputtering method shown in FIG. 4 is a method for flattening the insulation m3c by sputtering it on the substrate 1C on which the wiring pattern 2C is formed, by forming it so that a dry etching effect occurs (see FIG. 4). (See (a) to (C))
.

However, in all of the above flattening methods, the wiring patterns 2a and 2b are not uniform due to the manufacturing process.

Although it is possible to effectively flatten the dense portions of the wiring patterns 2C, it is difficult to flatten the rough portions of the wiring patterns 2a, 2b, and 2c, and it is difficult to effectively form the outermost layer flat. It was difficult.

For this reason, manufacturing cannot be carried out satisfactorily in terms of manufacturing reliability and device characteristics, and in particular, when a magnetic thin film device is formed, the magnetic characteristics deteriorate, which is a big problem.

(Problems to be Solved by the Invention) As described above, with all conventional planarization methods, it is difficult to planarize rough areas of wiring patterns, and it is difficult to effectively planarize the outermost layer. Since it is difficult to form a semiconductor device, it has not been possible to manufacture the device satisfactorily in terms of manufacturing reliability and device characteristics.

This invention was made in view of the above circumstances, and it is possible to easily manufacture and reliably form an insulating film with high flatness.
An object of the present invention is to provide a method for manufacturing an insulating film for a ll device.

[Structure of the Invention] (Means for Solving the Problems) The present invention includes a first step of forming a first resist layer corresponding to a wiring pattern on a substrate, and a step of forming a first resist layer on the first resist layer. The second resist layer is fired at a lower temperature than the first resist layer.
a second step of forming a resist layer; a third step of forming a metal film corresponding to the first resist layer on a substrate including the second resist layer; A thin film device is manufactured by including a fourth step of melting and forming a wiring pattern using the metal film, and a fifth step of forming an insulating film on the wiring pattern and the first resist layer. It is something.

(Function) According to the above structure, the insulating film can be formed with desired flatness on the first resist layer and the wiring pattern which are formed substantially flat. This makes it possible to form an insulating film with highly accurate flatness regardless of the density of the wiring pattern, improving reliability in the manufacturing process as much as possible, and preventing deterioration of device characteristics. can be achieved.

(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

FIG. 1 shows a WJI! according to an embodiment of the present invention! 1 shows a method for manufacturing an insulating film for an apparatus. As shown in FIG. , 180
Calcined at °C. A second resist layer 12 is formed on the first resist layer 11 and baked at, for example, 100°C (see FIG. A1. A metal film 13 made of Au, Cu, etc. is formed to have approximately the same thickness as the first resist layer 11 (see FIG.
See C). Next, the substrate 1o is immersed in, for example, acetone (not shown). As a result, the second resist layer 12 of the substrate 10 is dissolved by acetone, and the metal film 1
3 is lifted off, and a wiring pattern 1 composed of a first resist layer 11 and a metal 1!113 is formed on the substrate 10.
4 is formed substantially flat (see figure (d)). and,
On the first resist layer 11 and the wiring pattern 14, the temperature is lower than that of the first resist H11, for example, 170°.
An interlayer insulating film 15 is formed by baking with C (see FIG.
(see e)), another wiring pattern (not shown) is sequentially formed in a laminated manner on this insulating film 15 in the steps described above.

As described above, the method for manufacturing an insulating film for a thin film device includes a second resist 1 which is fired at a lower temperature than the first resist layer 11 on the first resist layer 11 which becomes a negative pattern of wiring.
After forming a metal 1113 having substantially the same thickness as the first resist layer 11 on the entire surface thereof,
The second resist layer 12 was melted and the metal film 13 was lifted off to form the first resist layer 11 and the wiring pattern 14, thereby forming the insulating film 15. According to this, the first resist layer 11 and the wiring pattern 14 can be separated without regard to the density of the wiring pattern 14.
Since the insulating film 15 can be formed substantially flat, it is possible to form the insulating film 15 with highly accurate flatness, and the reliability in the manufacturing process of the thin film device can be improved as much as possible. Desired device characteristics can be ensured. This can be expected to have a particularly effective effect when forming a magnetic thin film element, since deterioration of magnetic properties can be reliably prevented.

Note that this invention is not limited to the above embodiments, but also includes
It goes without saying that various modifications can be made without departing from the spirit of the invention.

[Effect of the invention] As detailed above, according to the present invention, C.
Thus, it is possible to provide an insulation+m manufacturing method for a thin film device that can reliably form an insulating film with high flatness.

[Brief explanation of the drawing]

FIG. 1 is a diagram for explaining an insulating film manufacturing method for a thin film device according to an embodiment of the present invention, and FIGS. 2 to 4 are diagrams for explaining a conventional method for manufacturing an insulating film for a thin film device, respectively. FIG. DESCRIPTION OF SYMBOLS 10... Substrate, 11... First resist layer, 12...
...Second resist layer, 13...Metal film, 14...
Wiring pattern, 15...insulating film. Applicant's agent Patent attorney Takehiko Suzue (b) (c) Payment (d) (e) Figure 1 52rjA (a) (b) Figure 3 (a) - (b) (C) No. 4rxJ

Claims (1)

[Claims] a first step of forming a first resist layer corresponding to a wiring pattern on a substrate; and a second resist layer baked at a lower temperature than the first resist layer on the first resist layer. a second step of forming a metal film corresponding to the first resist layer on the substrate including the second resist layer; and a third step of dissolving the second resist layer. a fourth step of forming a wiring pattern with the metal film;
A method for manufacturing an insulating film for a thin film device, comprising a fifth step of forming an insulating film on the wiring pattern and the first resist layer.