JPH01116447U - - Google Patents
Info
- Publication number
- JPH01116447U JPH01116447U JP1153388U JP1153388U JPH01116447U JP H01116447 U JPH01116447 U JP H01116447U JP 1153388 U JP1153388 U JP 1153388U JP 1153388 U JP1153388 U JP 1153388U JP H01116447 U JPH01116447 U JP H01116447U
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- sio
- pattern wiring
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
第１図は、本考案の半導体の要部拡大断面図、
第２図は、従来例を示す部分拡大断面図である。
１……ＳｉＯ２膜、２……下部Ａｌパターン配
線、３……有機膜、４１……上部配線部分、４２
……遮光部分、６……Ｓｉ基板。
FIG. 1 is an enlarged sectional view of the main parts of the semiconductor of the present invention,
FIG. 2 is a partially enlarged sectional view showing a conventional example. DESCRIPTION OF SYMBOLS 1... SiO2 film, 2...Lower Al pattern wiring, 3...Organic film, 4 1 ...Upper wiring part, 4 2
...Light shielding part, 6...Si substrate.
Claims (1)
配線を形成し、該パターン配線及び該ＳｉＯ２膜
上に有機膜を介して前記パターン配線の直上部の
一部を除いて遮光部分と、配線部分をそれぞれ設
け保護膜にて封入形成したことを特徴とするＩＣ
素子の多層配線構造。 A lower pattern wiring is formed on the Si substrate via a SiO 2 film, and a light-shielding part and a wiring part are formed on the pattern wiring and the SiO 2 film with an organic film interposed therebetween except for a part directly above the pattern wiring. An IC characterized in that each of these is provided and sealed with a protective film.
Multilayer wiring structure of the element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153388U JPH01116447U (en) | 1988-01-29 | 1988-01-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153388U JPH01116447U (en) | 1988-01-29 | 1988-01-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01116447U true JPH01116447U (en) | 1989-08-07 |
Family
ID=31220173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1153388U Pending JPH01116447U (en) | 1988-01-29 | 1988-01-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01116447U (en) |
-
1988
- 1988-01-29 JP JP1153388U patent/JPH01116447U/ja active Pending