JPH0420251U - - Google Patents
Info
- Publication number
- JPH0420251U JPH0420251U JP6022690U JP6022690U JPH0420251U JP H0420251 U JPH0420251 U JP H0420251U JP 6022690 U JP6022690 U JP 6022690U JP 6022690 U JP6022690 U JP 6022690U JP H0420251 U JPH0420251 U JP H0420251U
- Authority
- JP
- Japan
- Prior art keywords
- light
- metal film
- phototransistor
- photodiode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案の光半導体装置における遮光金
属膜の構造の一例を示す説明図、第２図は従来の
この種の光半導体装置における遮光金属膜の構造
の一例を示す説明図である。
１……Ｓｉ基板ウエハ、２……ＳｉＯ２膜、３
……第１層目Ａ膜、４……層間絶縁膜、５……
第２層目Ａ膜の遮光金属膜、６……パシベーシ
ヨン膜、７……アイソレーシヨン領域。なお図中
同一符号は同一または相当するものを示す。
FIG. 1 is an explanatory diagram showing an example of the structure of a light-shielding metal film in an optical semiconductor device of the present invention, and FIG. 2 is an explanatory diagram showing an example of the structure of a light-shielding metal film in a conventional optical semiconductor device of this type. 1... Si substrate wafer, 2... SiO 2 film, 3
...First layer A film, 4... Interlayer insulating film, 5...
Light-shielding metal film of second layer A film, 6... Passivation film, 7... Isolation region. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
該フオトダイオードまたはフオトトランジスタか
らの信号を処理する回路を一体化したモノリシツ
ク型の光半導体装置において、 フオトダイオードまたはフオトトランジスタか
らの信号を処理する回路部分を遮光する遮光金属
膜を配線金属膜上部に重なり合わない領域にのみ
設け、該遮光金属膜をスルーホールを通じてアイ
ソレーシヨン領域に接続しアース電位にしたこと
を特徴とする光半導体装置。[Claims for Utility Model Registration] A monolithic optical semiconductor device that integrates a photodiode or phototransistor and a circuit for processing a signal from the photodiode or phototransistor, which processes a signal from the photodiode or phototransistor. An optical semiconductor device characterized in that a light-shielding metal film for shielding a circuit portion from light is provided only in a region that does not overlap with the upper part of the wiring metal film, and the light-shielding metal film is connected to an isolation region through a through hole and set to a ground potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6022690U JPH0420251U (en) | 1990-06-08 | 1990-06-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6022690U JPH0420251U (en) | 1990-06-08 | 1990-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0420251U true JPH0420251U (en) | 1992-02-20 |
Family
ID=31587410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6022690U Pending JPH0420251U (en) | 1990-06-08 | 1990-06-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0420251U (en) |
-
1990
- 1990-06-08 JP JP6022690U patent/JPH0420251U/ja active Pending
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