JPS63254736A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS63254736A JPS63254736A JP62089540A JP8954087A JPS63254736A JP S63254736 A JPS63254736 A JP S63254736A JP 62089540 A JP62089540 A JP 62089540A JP 8954087 A JP8954087 A JP 8954087A JP S63254736 A JPS63254736 A JP S63254736A
- Authority
- JP
- Japan
- Prior art keywords
- light
- thin film
- pigment
- film
- peripheral circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 18
- 239000000049 pigment Substances 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 abstract description 18
- 239000010408 film Substances 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、受光動作に関与する機能部を備えた光半導体
装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical semiconductor device having a functional section involved in light receiving operation.
従来の技術
単一チップ上に受光領域とその受光信号を処理するため
の周辺回路部とを有する光半導体装置に光が照射された
場合、受光領域だけでなく、その周辺回路部にも光が照
射される場合がある。周辺回路部に光が照射されると、
回路部のリーク電流が増加したり、誤動作をすることが
ある。この対策として、周辺回路部上に表面保護膜を介
して遮光用の金属膜を積層することが提案されている。Conventional Technology When light is irradiated onto an optical semiconductor device that has a light receiving area and a peripheral circuit section for processing the light receiving signal on a single chip, the light irradiates not only the light receiving area but also the peripheral circuit section. May be irradiated. When light is applied to the peripheral circuit,
Leakage current in the circuit may increase or malfunction may occur. As a countermeasure to this problem, it has been proposed to laminate a light-shielding metal film on the peripheral circuit section with a surface protective film interposed therebetween.
第３図にその断面図の一例を示す。受光領域１と周辺回
路部２からなる光半導体装置３において、金属配線１３
の上に表面保護膜１２を介して遮光用金属膜１６を積層
している。FIG. 3 shows an example of its cross-sectional view. In an optical semiconductor device 3 consisting of a light receiving region 1 and a peripheral circuit section 2, metal wiring 13
A light-shielding metal film 16 is laminated thereon with a surface protection film 12 interposed therebetween.
発明が解決しようとする問題点
このように、金属配線の上に遮光用金属膜を形成すると
、製造工程が複雑化すると共に、浮遊容量が生じて微小
電流の増幅が高速応答を必要とする回路部などに影響を
もたらし、回路の動作特性が低下することがあった。Problems to be Solved by the Invention As described above, forming a light-shielding metal film on metal wiring complicates the manufacturing process and creates stray capacitance, making it difficult for circuits that require high-speed response to amplify minute currents. In some cases, the operating characteristics of the circuit deteriorate.
本発明は、集積化受光素子の製造工程を複雑化すること
な（、また浮遊容量が発生しないように周辺回路部の遮
光を行なうことを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to shield a peripheral circuit portion from light without complicating the manufacturing process of an integrated light-receiving element (and preventing stray capacitance from occurring).
問題点を解決するための手段
本発明は、上記の問題点を解決するために、顔料を含ん
だインクを印刷方式により周辺回路部上に薄膜を形成す
るもので、薄膜として光に対して不透過な特性を有する
顔料を用いることで遮光を容易に行なうことができる。Means for Solving the Problems In order to solve the above problems, the present invention forms a thin film on the peripheral circuit section using a printing method using ink containing a pigment, and the thin film is resistant to light. Light can be easily blocked by using a pigment that has transparent properties.
作用
本発明によれば、光半導体装置の周辺回路素子上に簡単
な方法で遮光用薄膜を形成することができ、受光素子に
光を照射させても、この光が周辺回路に影響を及ぼすこ
とがなくなる。したがって、周辺回路部が光の照射によ
り誤動作を起こすおそれがなくなる。According to the present invention, a light-shielding thin film can be formed on the peripheral circuit elements of an optical semiconductor device by a simple method, and even if the light receiving element is irradiated with light, this light will not affect the peripheral circuits. disappears. Therefore, there is no possibility that the peripheral circuit section will malfunction due to light irradiation.
しかも、従来のように遮光用金属膜を利用するものでは
、遮光用金属膜が金属配線上に積層されて浮遊容量が生
じるが、本発明による遮光用薄膜は、非導電性のインク
を印刷方式により形成されているから、浮遊容量が発生
せず、浮遊容量に伴なう動作特性の低下も起こらない。Furthermore, in conventional methods that utilize a light-shielding metal film, the light-shielding metal film is stacked on top of the metal wiring, resulting in stray capacitance, but the light-shielding thin film according to the present invention uses a printing method using non-conductive ink. Therefore, no stray capacitance occurs, and no deterioration in operating characteristics occurs due to stray capacitance.
さらに、本発明によって形成される遮光用薄膜は、非導
電性であるから、従来のように遮光用金属膜を介して金
属配線が短絡することもなく、高歩留りで安価な遮光用
薄膜を得ることができる。Furthermore, since the light-shielding thin film formed according to the present invention is non-conductive, there is no short-circuiting of metal wiring through the light-shielding metal film as in the conventional method, and a high-yield and inexpensive light-shielding thin film can be obtained. be able to.
実施例
第１図は、本発明の一実施例断面図である。周辺回路の
うち、光の影響を受は易い回路素子の代表としてトラン
ジスタを図示する。図において、４はＰ形シリコン基板
、５はｎ形の埋込層、６はｎ形のエピタキシャル層（受
光素子ではカソード領域、トランジスタではコレクタ領
域）、７はＰ水拡散による分離領域、８はｎ水拡散によ
るカソード（コレクタ）コンタクト領域、９はＰ水拡散
による受光素子のアノード（トランジスタではベース）
ｇＩ域、１０はｎ水拡散によるエミッタ領域、１１．１
２は酸化膜、１３はアルミニウム蒸着配線である。なお
、４〜１３の各構成は第２図、第３図の例の場合も共通
である。Embodiment FIG. 1 is a sectional view of one embodiment of the present invention. Among the peripheral circuits, a transistor is illustrated as a representative circuit element that is easily affected by light. In the figure, 4 is a P-type silicon substrate, 5 is an n-type buried layer, 6 is an n-type epitaxial layer (cathode region in a light receiving element, collector region in a transistor), 7 is an isolation region by P water diffusion, and 8 is an N is the cathode (collector) contact region by water diffusion, 9 is the anode of the light receiving element (base in transistor) by P water diffusion
gI region, 10 is the emitter region due to n water diffusion, 11.1
2 is an oxide film, and 13 is an aluminum vapor-deposited wiring. The configurations 4 to 13 are also common to the examples shown in FIGS. 2 and 3.
１４は遮光用薄膜である。この遮光用薄膜１４は、光の
不透過な特性を有する顔料を含むインクを印刷方式によ
り薄膜に形成されている。14 is a light shielding thin film. The light-shielding thin film 14 is formed into a thin film using a printing method using ink containing a pigment that is opaque to light.
第２図は、本発明の別の実施例である。周辺回路部２は
、上記の方法により遮光用薄膜１４が形成されている。FIG. 2 is another embodiment of the invention. In the peripheral circuit section 2, a light shielding thin film 14 is formed by the method described above.
この例では、受光領域１に単色の可視光が透過する顔料
を含むインクを、遮光用薄膜１４と同様に印刷方式によ
り、薄膜に形成した光学フィルター１５を有するもので
ある。In this example, an optical filter 15 is provided in the light-receiving region 1 by forming a thin film of ink containing a pigment that transmits monochromatic visible light using the same printing method as the light-shielding thin film 14.
複数の受光領域を有する場合や面積が異なる場合でもイ
ンクに含まれる顔料の光学的特性を換えることにより高
歩留りで安価な光学フィルターが得られることはいうま
でもない。It goes without saying that even when the ink has a plurality of light-receiving regions or has different areas, a high-yield and inexpensive optical filter can be obtained by changing the optical characteristics of the pigment contained in the ink.
発明の効果
以上のように、本発明によれば、光の不透過な特性を有
する顔料を含むインクを印刷方式により薄膜に形成する
ことで周辺回路部の遮光用薄膜が、また、波長を選択的
に透過させる顔料を含むインクを用いることにより受光
素子の光学フィルターが、安価で高歩留りに得ることが
できる。Effects of the Invention As described above, according to the present invention, by forming a thin film using a printing method using ink containing a pigment that is opaque to light, a thin film for light shielding in a peripheral circuit section can be formed, and a wavelength can be selected. By using an ink containing a pigment that transmits light, an optical filter for a light-receiving element can be obtained at low cost and with a high yield.
第１図、第２図は本発明の各実施例の断面図、第３図は
従来例の断面図である。
１・・・・・・受光領域、２・・・・・・周辺回路部、
３・旧・・光半導体装置、４・・・・・・Ｐ形゛シリコ
ン基板、５・” ”’ ｎ形埋込層、６・・・・・・ｎ
形エピタキシャル層、７・・・・・・Ｐ形分離領域、８
・・・・・・カソード（コレクタ）領域、９・・・・・
・アノード（ベース）Ｒ域、１０・・・・・・エミッタ
領域、１１．１２・・・・・・酸化膜、１３・・・・・
・アルミニウム蒸着配線、１４・・・・・・遮光用薄膜
、１５・・・・・・光学フィルタ。
代理人の氏名 弁理士 中尾敏男 ほかＩ名第１図
β
ｇ Ｊ／
第２図 ノ
〆 １
、）７
第３図
榛 Ｊ1 and 2 are sectional views of each embodiment of the present invention, and FIG. 3 is a sectional view of a conventional example. 1... Light receiving area, 2... Peripheral circuit section,
3. Old... Optical semiconductor device, 4... P-type silicon substrate, 5. ""' N-type buried layer, 6...... n
type epitaxial layer, 7...P type isolation region, 8
...Cathode (collector) area, 9...
・Anode (base) R region, 10... Emitter region, 11.12... Oxide film, 13...
- Aluminum vapor deposited wiring, 14... Thin film for light shielding, 15... Optical filter. Name of agent Patent attorney Toshio Nakao and other names Figure 1 β g J / Figure 2 No. 1 , ) 7 Figure 3 Haru J
Claims (1)
前記周辺回路素子の領域上に光の不透過な特性を有する
顔料を含むインク塗膜を形成したことを特徴とする光半
導体装置。Equipped with a light receiving area and peripheral circuit elements involved in light receiving operation,
An optical semiconductor device characterized in that an ink coating film containing a pigment having a property of not transmitting light is formed on the region of the peripheral circuit element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62089540A JPS63254736A (en) | 1987-04-10 | 1987-04-10 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62089540A JPS63254736A (en) | 1987-04-10 | 1987-04-10 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63254736A true JPS63254736A (en) | 1988-10-21 |
Family
ID=13973648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62089540A Pending JPS63254736A (en) | 1987-04-10 | 1987-04-10 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63254736A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05167412A (en) * | 1991-12-12 | 1993-07-02 | Matsushita Electric Works Ltd | Semiconductor relay circuit |
| JPH08335712A (en) * | 1995-04-05 | 1996-12-17 | Matsushita Electron Corp | Photodetector and its manufacture |
| JP2007235028A (en) * | 2006-03-03 | 2007-09-13 | Seiko Instruments Inc | Photoelectric conversion device and image sensor |
-
1987
- 1987-04-10 JP JP62089540A patent/JPS63254736A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05167412A (en) * | 1991-12-12 | 1993-07-02 | Matsushita Electric Works Ltd | Semiconductor relay circuit |
| JPH08335712A (en) * | 1995-04-05 | 1996-12-17 | Matsushita Electron Corp | Photodetector and its manufacture |
| JP2007235028A (en) * | 2006-03-03 | 2007-09-13 | Seiko Instruments Inc | Photoelectric conversion device and image sensor |
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