JPH0436230U - - Google Patents
Info
- Publication number
- JPH0436230U JPH0436230U JP7720090U JP7720090U JPH0436230U JP H0436230 U JPH0436230 U JP H0436230U JP 7720090 U JP7720090 U JP 7720090U JP 7720090 U JP7720090 U JP 7720090U JP H0436230 U JPH0436230 U JP H0436230U
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- psg
- psg film
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図……本考案の第１の実施例にかかわる半
導体装置の構造およびその製造方法を説明する図
、第２図……パツド電極の拡大図、第３図……従
来の半導体装置の構造およびその製造方法を説明
する図、第４図……本考案の第２の実施例にかか
わる半導体装置の構造およびその製造方法を説明
する図。
図において、１は半導体基板、２はパツド電極
、２−１はダメージ層、２−２はエツチング凹部
、３はＰＳＧ膜、３−１は内壁露出部、４はＳｉ
３Ｎ４膜、５はレジスト、６はパターニング穴、
７はパツド開口部、８はパターニング穴である。
Fig. 1: A diagram explaining the structure of a semiconductor device and its manufacturing method according to the first embodiment of the present invention, Fig. 2: An enlarged view of a pad electrode, Fig. 3: Structure of a conventional semiconductor device FIG. 4 is a diagram illustrating a structure of a semiconductor device and a method of manufacturing the same according to a second embodiment of the present invention. In the figure, 1 is a semiconductor substrate, 2 is a pad electrode, 2-1 is a damaged layer, 2-2 is an etching recess, 3 is a PSG film, 3-1 is an exposed inner wall, and 4 is a Si
3 N 4 film, 5 resist, 6 patterning hole,
7 is a pad opening, and 8 is a patterning hole.
Claims (1)
との２層で構成されている半導体装置において、
内壁にＰＳＧ膜が露出しないパツド開口部を有す
ることを特徴とする半導体装置。 In a semiconductor device in which the passivation film is composed of two layers, a PSG film and a Si 3 N 4 film,
A semiconductor device characterized by having a pad opening on an inner wall in which a PSG film is not exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7720090U JPH0436230U (en) | 1990-07-20 | 1990-07-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7720090U JPH0436230U (en) | 1990-07-20 | 1990-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0436230U true JPH0436230U (en) | 1992-03-26 |
Family
ID=31619365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7720090U Pending JPH0436230U (en) | 1990-07-20 | 1990-07-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0436230U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278942A (en) * | 2005-03-30 | 2006-10-12 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
| JP2007294605A (en) * | 2006-04-24 | 2007-11-08 | Oki Data Corp | Semiconductor device, led head, and image forming apparatus |
| JP2023163403A (en) * | 2022-04-28 | 2023-11-10 | 日機装株式会社 | Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62219541A (en) * | 1986-03-19 | 1987-09-26 | Fujitsu Ltd | Semiconductor device |
| JPS6384122A (en) * | 1986-09-29 | 1988-04-14 | Matsushita Electronics Corp | Semiconductor device |
-
1990
- 1990-07-20 JP JP7720090U patent/JPH0436230U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62219541A (en) * | 1986-03-19 | 1987-09-26 | Fujitsu Ltd | Semiconductor device |
| JPS6384122A (en) * | 1986-09-29 | 1988-04-14 | Matsushita Electronics Corp | Semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278942A (en) * | 2005-03-30 | 2006-10-12 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
| US8367541B2 (en) | 2005-03-30 | 2013-02-05 | Fujitsu Semiconductor Limited | Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same |
| JP2007294605A (en) * | 2006-04-24 | 2007-11-08 | Oki Data Corp | Semiconductor device, led head, and image forming apparatus |
| JP2023163403A (en) * | 2022-04-28 | 2023-11-10 | 日機装株式会社 | Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element |
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