JPS6219741U - - Google Patents
Info
- Publication number
- JPS6219741U JPS6219741U JP11152485U JP11152485U JPS6219741U JP S6219741 U JPS6219741 U JP S6219741U JP 11152485 U JP11152485 U JP 11152485U JP 11152485 U JP11152485 U JP 11152485U JP S6219741 U JPS6219741 U JP S6219741U
- Authority
- JP
- Japan
- Prior art keywords
- passivation film
- semiconductor chip
- film
- insulating film
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000009719 polyimide resin Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 1
Description
第１図はこの考案のバンプ構造の第一実施例を
説明するための半導体チツプの要部断面図、第２
図はこの考案のバンプ構造の第二実施例を説明す
るための半導体チツプの要部断面図、第３図は従
来のバンプ構造を説明するための半導体チツプの
要部断面図である。
３３……パツド、３５……パツシベーシヨン膜
、３７……パツシベーシヨン膜の穴、３９……バ
ンプ金属部、４１……バリアメタル、４３……バ
ンプ金属、４５……バンプ、５１……絶縁膜、５
３……絶縁膜の穴。
FIG. 1 is a sectional view of a main part of a semiconductor chip for explaining the first embodiment of the bump structure of this invention, and the second embodiment is a cross-sectional view of a semiconductor chip.
The figure is a sectional view of a main part of a semiconductor chip for explaining a second embodiment of the bump structure of this invention, and FIG. 3 is a sectional view of a main part of a semiconductor chip for explaining a conventional bump structure. 33... Pad, 35... Passivation film, 37... Hole in passivation film, 39... Bump metal portion, 41... Barrier metal, 43... Bump metal, 45... Bump, 51... Insulating film, 5
3... Hole in the insulating film.
Claims (1)
ン膜と、談パツシベーシヨン膜に設けた穴と、該
穴を介して該パツド及び該パツシベーシヨン膜の
間に設けたバンプ金属部とを有する半導体チツプ
のバンプ構造において、 パツシベーシヨン膜上に設けられ、該パツシベ
ーシヨン膜の厚みよりも厚い絶縁膜と、 該絶縁膜のパツシベーシヨン膜に設けた前記穴
の位置と対応する位置に設けた、パツシベーシヨ
ン膜に設けた穴より少なくとも大きな穴と、 該パツシベーシヨン膜及び絶縁膜に設けた穴を
介して、前記パツドと該絶縁膜の表面との間に設
けたバンプ金属部と、 を備えることを特徴とする半導体チツプのバンプ
構造。 (2) 絶縁膜の厚みを５〜２０μｍの厚みとした
ことを特徴とする実用新案登録請求の範囲第１項
記載の半導体チツプのバンプ構造。 (3) 絶縁膜を耐熱性ポリイミド樹脂としたこと
を特徴とする実用新案登録請求の範囲第１項記載
の半導体チツプのバンプ構造。[Scope of Claim for Utility Model Registration] (1) A pad of a semiconductor chip, a passivation film, a hole provided in the passivation film, and a bump metal portion provided between the pad and the passivation film via the hole. A bump structure for a semiconductor chip having an insulating film provided on a passivation film and having a thickness greater than the thickness of the passivation film, and a passivation film provided at a position corresponding to the position of the hole provided in the passivation film of the insulating film. A hole that is at least larger than the hole provided in the film, and a bump metal portion provided between the pad and the surface of the insulating film via the hole provided in the passivation film and the insulating film. The bump structure of a semiconductor chip. (2) The bump structure for a semiconductor chip according to claim 1, wherein the thickness of the insulating film is 5 to 20 μm. (3) The bump structure of a semiconductor chip according to claim 1, wherein the insulating film is made of a heat-resistant polyimide resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985111524U JPH0526738Y2 (en) | 1985-07-20 | 1985-07-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985111524U JPH0526738Y2 (en) | 1985-07-20 | 1985-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6219741U true JPS6219741U (en) | 1987-02-05 |
| JPH0526738Y2 JPH0526738Y2 (en) | 1993-07-07 |
Family
ID=30991521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985111524U Expired - Lifetime JPH0526738Y2 (en) | 1985-07-20 | 1985-07-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0526738Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000055898A1 (en) * | 1999-03-16 | 2000-09-21 | Seiko Epson Corporation | Semiconductor device, method of manufacture thereof, circuit board, and electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4867662U (en) * | 1971-12-03 | 1973-08-28 | ||
| JPS5334466A (en) * | 1976-09-10 | 1978-03-31 | Mitsubishi Electric Corp | Electrode construction of semiconductor device |
| JPS57117258A (en) * | 1981-01-13 | 1982-07-21 | Ricoh Elemex Corp | Semiconductor device |
| JPS5940550A (en) * | 1982-08-30 | 1984-03-06 | Hitachi Ltd | Semiconductor device |
-
1985
- 1985-07-20 JP JP1985111524U patent/JPH0526738Y2/ja not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4867662U (en) * | 1971-12-03 | 1973-08-28 | ||
| JPS5334466A (en) * | 1976-09-10 | 1978-03-31 | Mitsubishi Electric Corp | Electrode construction of semiconductor device |
| JPS57117258A (en) * | 1981-01-13 | 1982-07-21 | Ricoh Elemex Corp | Semiconductor device |
| JPS5940550A (en) * | 1982-08-30 | 1984-03-06 | Hitachi Ltd | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000055898A1 (en) * | 1999-03-16 | 2000-09-21 | Seiko Epson Corporation | Semiconductor device, method of manufacture thereof, circuit board, and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0526738Y2 (en) | 1993-07-07 |
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