JPH0485596U - - Google Patents
Info
- Publication number
- JPH0485596U JPH0485596U JP12653990U JP12653990U JPH0485596U JP H0485596 U JPH0485596 U JP H0485596U JP 12653990 U JP12653990 U JP 12653990U JP 12653990 U JP12653990 U JP 12653990U JP H0485596 U JPH0485596 U JP H0485596U
- Authority
- JP
- Japan
- Prior art keywords
- back electrode
- display
- electrode
- light emitting
- emitting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 description 2
Landscapes
- Electroluminescent Light Sources (AREA)
Description
第１図は、本考案の一実施例であるＥＬデイス
プレイの構造を示す概略断面図、第２図は、本考
案の他の実施例であるＥＬデイスプレイの構造を
示す概略断面図、第３図は従来のＥＬデイスプレ
イの構造を示す概略断面図である。
１……透明ガラス基板、２……透明電極、３…
…第１の絶縁層、４……発光層、５……第２の絶
縁層、６……背面電極、７……配線電極、１１…
…透明ガラス基板、１２……透明電極、１４……
発光層、１５……絶縁層、１６……背面電極、１
７……配線電極。
FIG. 1 is a schematic cross-sectional view showing the structure of an EL display which is an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view showing the structure of an EL display which is another embodiment of the present invention, and FIG. 1 is a schematic cross-sectional view showing the structure of a conventional EL display. 1...Transparent glass substrate, 2...Transparent electrode, 3...
...First insulating layer, 4... Light emitting layer, 5... Second insulating layer, 6... Back electrode, 7... Wiring electrode, 11...
...Transparent glass substrate, 12...Transparent electrode, 14...
Light emitting layer, 15... Insulating layer, 16... Back electrode, 1
7...Wiring electrode.
Claims (1)
背面電極とを有するＥＬ素子を用いたＥＬデイス
プレイにおいて、 背面電極がアモルフアスシリコン層からなるこ
とを特徴とするＥＬデイスプレイ。[Claims for Utility Model Registration] A transparent electrode laminated on a substrate, a light emitting layer,
An EL display using an EL element having a back electrode, characterized in that the back electrode is made of an amorphous silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12653990U JPH0485596U (en) | 1990-11-30 | 1990-11-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12653990U JPH0485596U (en) | 1990-11-30 | 1990-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0485596U true JPH0485596U (en) | 1992-07-24 |
Family
ID=31874090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12653990U Pending JPH0485596U (en) | 1990-11-30 | 1990-11-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0485596U (en) |
-
1990
- 1990-11-30 JP JP12653990U patent/JPH0485596U/ja active Pending