JPH03116697U - - Google Patents
Info
- Publication number
- JPH03116697U JPH03116697U JP2445890U JP2445890U JPH03116697U JP H03116697 U JPH03116697 U JP H03116697U JP 2445890 U JP2445890 U JP 2445890U JP 2445890 U JP2445890 U JP 2445890U JP H03116697 U JPH03116697 U JP H03116697U
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- thin film
- light emitting
- transparent electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
第１図はこの考案に係る薄膜ＥＬ素子の構造の
実施例を示す断面図である。第２図は従来の実施
例の断面図である。
主要部分の符号の説明、１……ガラス基板、２
……透明電極、３……第１の絶縁層、４……発光
層、５……第２の絶縁層、６……背面電極、７…
…第３の絶縁層、８……第４の絶縁層。
FIG. 1 is a sectional view showing an embodiment of the structure of a thin film EL element according to this invention. FIG. 2 is a sectional view of a conventional embodiment. Explanation of symbols of main parts, 1...Glass substrate, 2
...Transparent electrode, 3...First insulating layer, 4...Light emitting layer, 5...Second insulating layer, 6...Back electrode, 7...
...Third insulating layer, 8... Fourth insulating layer.
Claims (1)
層と、発光層と、第２の絶縁層と、背面電極とを
順次積層した薄膜ＥＬ素子において、 前記透明電極と第１の絶縁層との間にアモルフ
アス結晶構造を有する第３の絶縁層を形成したこ
とを特徴とする薄膜ＥＬ素子の構造。 ２ ガラス基板の上に、透明電極と、第１の絶縁
層と、発光層と、第２の絶縁層と、背面電極とを
順次積層した薄膜ＥＬ素子において、 前記発光層と第２の絶縁層との間に酸素ガスを
用いないで成膜した絶縁層を形成したことを特徴
とする薄膜ＥＬ素子の構造。[Claims for Utility Model Registration] 1. A thin film EL device in which a transparent electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a back electrode are sequentially laminated on a glass substrate, comprising: A structure of a thin film EL device, characterized in that a third insulating layer having an amorphous crystal structure is formed between a transparent electrode and a first insulating layer. 2. A thin film EL device in which a transparent electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a back electrode are sequentially laminated on a glass substrate, wherein the light emitting layer and the second insulating layer A structure of a thin film EL element characterized in that an insulating layer formed without using oxygen gas is formed between the EL element and the EL element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2445890U JPH03116697U (en) | 1990-03-13 | 1990-03-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2445890U JPH03116697U (en) | 1990-03-13 | 1990-03-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03116697U true JPH03116697U (en) | 1991-12-03 |
Family
ID=31527419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2445890U Pending JPH03116697U (en) | 1990-03-13 | 1990-03-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03116697U (en) |
-
1990
- 1990-03-13 JP JP2445890U patent/JPH03116697U/ja active Pending