JPS641498U - - Google Patents

Info

Publication number
JPS641498U
JPS641498U JP9560387U JP9560387U JPS641498U JP S641498 U JPS641498 U JP S641498U JP 9560387 U JP9560387 U JP 9560387U JP 9560387 U JP9560387 U JP 9560387U JP S641498 U JPS641498 U JP S641498U
Authority
JP
Japan
Prior art keywords
thin film
back electrode
protective
light emitting
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9560387U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9560387U priority Critical patent/JPS641498U/ja
Publication of JPS641498U publication Critical patent/JPS641498U/ja
Pending legal-status Critical Current

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  • Illuminated Signs And Luminous Advertising (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の薄膜ELの封止構
造の断面図である。第2図は従来例による薄膜E
Lの封止構造の断面図である。 1……基板ガラス、2……透明電極(ITO)
、3……EL層(発光層又は発光層+絶縁層)、
4……裏面電極(Al)、9……シリコン樹脂、
10……エポキシ樹脂、11……平ガラス。
FIG. 1 is a sectional view of a thin film EL sealing structure according to an embodiment of the present invention. Figure 2 shows a thin film E according to a conventional example.
FIG. 3 is a cross-sectional view of the sealing structure of L. 1...Substrate glass, 2...Transparent electrode (ITO)
, 3...EL layer (light emitting layer or light emitting layer + insulating layer),
4... Back electrode (Al), 9... Silicone resin,
10...Epoxy resin, 11...Flat glass.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 少なくとも一方が透明である一対の電極によつ
て発光層を狭持してなる薄膜EL素子において、
裏面電極又は裏面電極上に形成された保護薄膜上
にシリコン樹脂、エポキシ樹脂の順に保護膜を積
層させたことを特徴とする薄膜ELの封止構造。
In a thin film EL element in which a light emitting layer is sandwiched between a pair of electrodes, at least one of which is transparent,
A thin film EL sealing structure characterized in that a protective film of silicone resin and epoxy resin is laminated in this order on a back electrode or a protective thin film formed on the back electrode.
JP9560387U 1987-06-22 1987-06-22 Pending JPS641498U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9560387U JPS641498U (en) 1987-06-22 1987-06-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9560387U JPS641498U (en) 1987-06-22 1987-06-22

Publications (1)

Publication Number Publication Date
JPS641498U true JPS641498U (en) 1989-01-06

Family

ID=30960330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9560387U Pending JPS641498U (en) 1987-06-22 1987-06-22

Country Status (1)

Country Link
JP (1) JPS641498U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583196A (en) * 1978-12-20 1980-06-23 Nippon Telegraph & Telephone Method of sealing thin film electroluminescent element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583196A (en) * 1978-12-20 1980-06-23 Nippon Telegraph & Telephone Method of sealing thin film electroluminescent element

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