JPH0270444U - - Google Patents
Info
- Publication number
- JPH0270444U JPH0270444U JP15026688U JP15026688U JPH0270444U JP H0270444 U JPH0270444 U JP H0270444U JP 15026688 U JP15026688 U JP 15026688U JP 15026688 U JP15026688 U JP 15026688U JP H0270444 U JPH0270444 U JP H0270444U
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- semiconductor
- stress absorbing
- semiconductor device
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図は従来の半導体装置のＡｌ配線部分を示す断面
図である。
１……Ｓｉ基板、２……ＳｉＯ２層、３……Ａ
ｌ配線、４，４′……Ｓｉ３Ｎ４層、１０……ス
トレス吸収部。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is a cross-sectional view showing an Al wiring portion of a conventional semiconductor device. 1...Si substrate, 2...SiO 2 layer, 3...A
1 wiring, 4, 4'... 4 Si 3 N layers, 10... stress absorption section.
Claims (1)
子にＡｌ配線を接続してなる半導体装置に於いて
、 半導体素子が形成された半導体基板と、 この半導体基板上に絶縁膜を介して形成され上
記半導体素子に接続されるＡｌ配線と、 このＡｌ配線上に所定の間隔をおいて上記Ａｌ
配線と交差する方向に形成された複数の応力吸収
部と、 この応力吸収部上に形成された表面保護膜と、 を備えたことを特徴とする半導体装置。 (2) 上記応力吸収部と上記表面保護膜部とは同
一材料とからなることを特徴とする請求項第１項
記載の半導体装置。[Scope of Claim for Utility Model Registration] (1) In a semiconductor device in which Al wiring is connected to a semiconductor element formed on one principal surface of a semiconductor substrate, a semiconductor substrate on which a semiconductor element is formed, and this semiconductor substrate. an Al wiring formed on the top via an insulating film and connected to the semiconductor element, and an Al wiring placed at a predetermined interval on the Al wiring
What is claimed is: 1. A semiconductor device comprising: a plurality of stress absorbing portions formed in a direction intersecting wiring; and a surface protection film formed on the stress absorbing portions. (2) The semiconductor device according to claim 1, wherein the stress absorbing portion and the surface protection film portion are made of the same material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15026688U JPH0270444U (en) | 1988-11-17 | 1988-11-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15026688U JPH0270444U (en) | 1988-11-17 | 1988-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0270444U true JPH0270444U (en) | 1990-05-29 |
Family
ID=31423257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15026688U Pending JPH0270444U (en) | 1988-11-17 | 1988-11-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0270444U (en) |
-
1988
- 1988-11-17 JP JP15026688U patent/JPH0270444U/ja active Pending