JPH02101533U - - Google Patents
Info
- Publication number
- JPH02101533U JPH02101533U JP859489U JP859489U JPH02101533U JP H02101533 U JPH02101533 U JP H02101533U JP 859489 U JP859489 U JP 859489U JP 859489 U JP859489 U JP 859489U JP H02101533 U JPH02101533 U JP H02101533U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- insulating film
- utility
- scope
- registration request
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 239000008188 pellet Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
第1図は本考案の一実施例によるペレツトの断
面図であり、第2図は従来のペレツトの断面図で
ある。
11,21…シリコン基板、12,13,22
…絶縁膜、14,24…配線、15,25…表面
保護膜、16…本考案による絶縁膜中に埋め込ん
だ配線。
FIG. 1 is a sectional view of a pellet according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional pellet. 11, 21...Silicon substrate, 12, 13, 22
...Insulating film, 14, 24... Wiring, 15, 25... Surface protective film, 16... Wiring embedded in the insulating film according to the present invention.
Claims (1)
導体装置に於いて、前記半導体素子の周辺部の配
線部を絶縁膜中に形成したことを特徴とする半導
体装置。 1. A semiconductor device comprising a semiconductor element sealed in a sealing resin body, characterized in that a wiring portion around the semiconductor element is formed in an insulating film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP859489U JPH02101533U (en) | 1989-01-27 | 1989-01-27 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP859489U JPH02101533U (en) | 1989-01-27 | 1989-01-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02101533U true JPH02101533U (en) | 1990-08-13 |
Family
ID=31214610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP859489U Pending JPH02101533U (en) | 1989-01-27 | 1989-01-27 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02101533U (en) |
-
1989
- 1989-01-27 JP JP859489U patent/JPH02101533U/ja active Pending