JPH01110449U - - Google Patents

Info

Publication number
JPH01110449U
JPH01110449U JP661688U JP661688U JPH01110449U JP H01110449 U JPH01110449 U JP H01110449U JP 661688 U JP661688 U JP 661688U JP 661688 U JP661688 U JP 661688U JP H01110449 U JPH01110449 U JP H01110449U
Authority
JP
Japan
Prior art keywords
amorphous silicon
solar cell
type
thin film
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP661688U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP661688U priority Critical patent/JPH01110449U/ja
Publication of JPH01110449U publication Critical patent/JPH01110449U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Description

【図面の簡単な説明】
第１図は本考案に係る薄膜太陽電池の実施例の
説明用平面図、第２図は本考案に係る薄膜太陽電
池の実施例の説明用断面図、第３図は従来例の説
明用平面図、第４図は従来例の説明用断面図であ
る。 １：絶縁性基板、２：下部電極、３：非晶質シ
リコン系半導体層、４：上部電極。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 絶縁性基板上に、下部電極、非晶質シリコ
    ン系半導体層及び上部電極を積層した非晶質シリ
    コン系太陽電池において、発電部に位置する上部
    電極を下部電極より大きくしたことを特徴とする
    薄膜太陽電池。 (2) 非晶質シリコン系半導体層が、受光面側か
    らｐ型アモルフアスシリコンカーバイド、ｉ型ア
    モルフアスシリコン、ｎ型アモルフアスシリコン
    を積層させたＰＩＮへテロ接合型でなる実用新案
    登録請求の範囲第１項記載の薄膜太陽電池。
JP661688U 1988-01-20 1988-01-20 Pending JPH01110449U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP661688U JPH01110449U (ja) 1988-01-20 1988-01-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP661688U JPH01110449U (ja) 1988-01-20 1988-01-20

Publications (1)

Publication Number Publication Date
JPH01110449U true JPH01110449U (ja) 1989-07-26

Family

ID=31210941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP661688U Pending JPH01110449U (ja) 1988-01-20 1988-01-20

Country Status (1)

Country Link
JP (1) JPH01110449U (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
JPS60117685A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd 非晶質シリコン太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
JPS60117685A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd 非晶質シリコン太陽電池

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