JPH01105523A - Solid electrolytic capacitor - Google Patents
Solid electrolytic capacitorInfo
- Publication number
- JPH01105523A JPH01105523A JP26183787A JP26183787A JPH01105523A JP H01105523 A JPH01105523 A JP H01105523A JP 26183787 A JP26183787 A JP 26183787A JP 26183787 A JP26183787 A JP 26183787A JP H01105523 A JPH01105523 A JP H01105523A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polymer film
- conductive polymer
- lead
- pyrrole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 34
- 239000007787 solid Substances 0.000 title claims abstract description 9
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 34
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims abstract description 16
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229920006254 polymer film Polymers 0.000 claims abstract description 16
- 229930192474 thiophene Natural products 0.000 claims abstract description 8
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 238000006116 polymerization reaction Methods 0.000 abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 10
- 229920000642 polymer Polymers 0.000 abstract description 9
- 239000011888 foil Substances 0.000 abstract description 6
- 239000007800 oxidant agent Substances 0.000 abstract description 6
- 230000001590 oxidative effect Effects 0.000 abstract description 4
- 230000000379 polymerizing effect Effects 0.000 abstract description 3
- 239000003989 dielectric material Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 3
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000003115 supporting electrolyte Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は導電性高分子を固体電解質として用1またコン
デンサに関する。 。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a capacitor using a conductive polymer as a solid electrolyte. .
(従来の技術)
先に本発明者らは皮膜形成金属に誘電体酸化皮膜を形成
し、この誘電体酸化皮膜上に化学酸化重合導電性高分子
膜を形成し、更にこの上に導電性高分子の電解重合膜を
形成せしめた構造の固体電解コンデンサを提案した(4
8願昭62−4053)。(Prior Art) First, the present inventors formed a dielectric oxide film on a film-forming metal, formed a chemical oxidation polymerized conductive polymer film on the dielectric oxide film, and further coated a conductive polymer film on this dielectric oxide film. We proposed a solid electrolytic capacitor with a structure in which a molecular electrolytic polymer film was formed (4
8 Gansho 62-4053).
更に上記固体電解コンデンサの製造について、電解重合
の効率化を計るための方法として、化学酸化重合導電性
高分子膜に導電体を接触あるいはl1以内の距離に配置
して電解重合を行なう方法を提案した(特願昭62−1
87739)。上記コンデンサは静電容量が大きくかつ
電気的特性、温度特性の優れた固体電解コンデンサであ
るが、その構造については未だ改良の余地があった。Furthermore, in order to improve the efficiency of electrolytic polymerization in the production of the solid electrolytic capacitor described above, we proposed a method in which electrolytic polymerization is carried out by placing a conductor in contact with or within a distance of 11 from a chemically oxidized conductive polymer film. (Special application 1986-1)
87739). Although the above-mentioned capacitor is a solid electrolytic capacitor with a large capacitance and excellent electrical characteristics and temperature characteristics, there is still room for improvement in its structure.
(発明が解決しようとする問題点)
すなわち、前記したような導電体を接触させて電解重合
を行なった場合、誘電体酸化皮膜が薄い場合や、機械的
に脆い場合には、導電体が誘電体酸化皮膜を損傷し、着
しくコンデンサ特性を劣化させる場合があった。(Problems to be Solved by the Invention) In other words, when electrolytic polymerization is performed by bringing conductors into contact as described above, if the dielectric oxide film is thin or mechanically brittle, the conductor may become dielectric. In some cases, the oxidation film of the capacitor was damaged and the capacitor characteristics deteriorated.
(問題点を解決するための手段)
本発明者らは上記問題点を解決するため種々検討した結
果、固体電解コンデンサにおいて、一部もしくは全部が
皮膜形成金属からなる陽極リードを取り付けた皮膜形成
金属と、該陽極リードの一部に形成された誘電体酸化皮
膜と、該陽極リード上に形成された誘電体酸化皮膜の一
部を被覆する絶縁性高分子膜と、該絶縁性高分子膜の一
部表面および皮膜形成金属の誘電体酸化皮膜上に形成さ
れたピロール、チオフェン、アニリンまたはフランの化
学酸化重合、導電性高分子膜と、該化学酸化重合導電性
高分子膜上に形成されたピロール、チオフェン、アニリ
ンまたはフランの電解酸化重合導電性高分子膜とからな
る構造にすることにより、前記問題点を解決できること
を見出した。(Means for Solving the Problems) As a result of various studies in order to solve the above-mentioned problems, the present inventors have found that, in a solid electrolytic capacitor, a film-forming metal is attached with an anode lead that is partially or entirely made of a film-forming metal. a dielectric oxide film formed on a part of the anode lead; an insulating polymer film covering a part of the dielectric oxide film formed on the anode lead; A chemically oxidatively polymerized conductive polymer film of pyrrole, thiophene, aniline or furan formed on a dielectric oxide film of a partial surface and film-forming metal, and a conductive polymer film formed on the chemically oxidatively polymerized conductive polymer film. It has been found that the above problems can be solved by creating a structure consisting of an electrolytically oxidized conductive polymer film of pyrrole, thiophene, aniline, or furan.
次に本発明を図面により更に詳しく説明する。Next, the present invention will be explained in more detail with reference to the drawings.
第1図は皮膜形成金属としてタンタルを用い、この微粉
を焼結し、中心部よりタンタル線により陽極リードを取
り出したコンデンサの概略断面図である。タンタルより
なる皮膜形成金属(1)とタンタル線よりなる陽極リー
ド(7)の一部に、陽極酸化により誘電体酸化皮膜(2
)を形成せしめる。次に陽極リード(7)を、絶縁性高
分子を塗布等の方法により絶縁性高分子111(3)で
被覆する。被覆する範囲は、陽極リード(7)の誘電体
酸化皮膜(2)が形成されている部分以外まで行なって
も支障ない0次に該絶縁性高分子膜(3)および誘電体
酸化皮膜部分(2)を酸化剤または酸化剤を含む溶液に
浸漬し、更に導電性高分子単量体または該単量体を含む
溶液に浸漬し、絶縁性高分子膜(3)表面及び誘電体酸
化皮膜(2)上に化学酸化重合導電性高分子膜(4)を
形成せしめる。化学酸化重合導電性高分子膜(4)を形
成せしめる範囲は絶縁性高分子膜(3)よりも下になる
ようにする。次いで絶縁性高分子11(3)上に形成し
た化学酸化重合導電性高分子膜(4)に導電体(6)を
接触させ、支持電解質及び導電性高分子単量体を含む電
解液に浸漬し、該導電体(6)を陽極として電解酸化重
合することにより電解酸化重合導電性高分子膜(5)を
形成せしめる。この電解酸化重合において、絶縁性高分
子膜(3)が無いと導電体(6)により誘電体酸化皮膜
(2)が損傷し、できあがったコンデンサの漏れ電流が
大きくなることがある。FIG. 1 is a schematic cross-sectional view of a capacitor in which tantalum is used as the film-forming metal, fine powder is sintered, and an anode lead is taken out from the center using a tantalum wire. A dielectric oxide film (2) is formed by anodic oxidation on a part of the film-forming metal (1) made of tantalum and the anode lead (7) made of tantalum wire.
) is formed. Next, the anode lead (7) is coated with an insulating polymer 111 (3) by a method such as coating an insulating polymer. The area to be coated is the zero-order insulating polymer film (3) and the dielectric oxide film ( 2) is immersed in an oxidizing agent or a solution containing an oxidizing agent, and further immersed in a conductive polymer monomer or a solution containing the monomer to form the surface of the insulating polymer film (3) and the dielectric oxide film ( 2) A chemically oxidized and polymerized conductive polymer film (4) is formed thereon. The area in which the chemical oxidation polymerized conductive polymer film (4) is formed is below the insulating polymer film (3). Next, the conductor (6) is brought into contact with the chemically oxidized conductive polymer film (4) formed on the insulating polymer 11 (3), and immersed in an electrolytic solution containing a supporting electrolyte and a conductive polymer monomer. Then, electrolytic oxidative polymerization is performed using the conductor (6) as an anode to form an electrolytic oxidatively polymerized conductive polymer film (5). In this electrolytic oxidation polymerization, if the insulating polymer film (3) is not present, the dielectric oxide film (2) may be damaged by the conductor (6), and the leakage current of the resulting capacitor may increase.
第2図は捲回型コンデンサのリード取り付は部付近の概
略断面図である。アルミニウム笛よりなる皮膜形成金属
(1)にアルミニウム製リードボス(8)を介して陽極
リードが取り付けられて−する。FIG. 2 is a schematic cross-sectional view of the vicinity of the lead attachment portion of a wound type capacitor. An anode lead is attached to a film-forming metal (1) made of an aluminum whistle via an aluminum lead boss (8).
リードボス(8)の一部及び皮膜形成金属(1)の全面
に誘電体酸化皮膜(2)−ht影形成れ、リードボスと
陽極リード(7)の一部は絶縁性高分子膜(3)により
被覆されている。更に絶縁性高分子膜(3)の一部及び
誘電体酸化度II(2)上には化学酸化重合導電性高分
子膜(4)が形成され、更にその上に電解酸化重合導電
性高分子膜(5)が形成されて−する。A dielectric oxide film (2)-ht shadow is formed on a part of the lead boss (8) and the entire surface of the film-forming metal (1), and a part of the lead boss and anode lead (7) is covered with an insulating polymer film (3). Covered. Furthermore, a chemically oxidatively polymerized conductive polymer film (4) is formed on a part of the insulating polymeric film (3) and the dielectric oxidation degree II (2), and an electrolytically oxidatively polymerized conductive polymer film (4) is further formed on the dielectric oxidation degree II (2). A membrane (5) is formed.
本発明に用いる絶縁性高分子は塩化ビニル、ポリエチレ
ンテレフタレート、シリコーン樹脂、エポキシ樹脂、7
ツ化ビニリデン、ポリイミド、ポリエーテルイミド、ポ
リアミドイミド、ポリエチレン、ポリプロピレン等種々
のものを使用することができ、これらの高分子を適当な
溶媒に溶解して塗布後乾燥させ硬化させるか、熱溶融し
て塗布し冷却して硬化させるか、あるいは硬化剤と混合
して塗布するなどの方法により用いる。Insulating polymers used in the present invention include vinyl chloride, polyethylene terephthalate, silicone resin, epoxy resin,
Various materials such as vinylidene tsunide, polyimide, polyetherimide, polyamideimide, polyethylene, and polypropylene can be used, and these polymers can be dissolved in an appropriate solvent and applied, then dried and cured, or heated and melted. It is used by methods such as applying the compound and cooling it to harden it, or mixing it with a hardening agent and applying it.
本発明に用いる皮膜形成金属は、フルミニツムまたはタ
ンタル等のNまたは焼結体であり、例えば箔を用いる場
合には捲回型あるいは平板状とすことができる。また捲
回型の場合には必ずしも陽極および/またはセパレータ
紙を必要としない。The film-forming metal used in the present invention is N or a sintered body such as full minute or tantalum. For example, when a foil is used, it can be in a rolled shape or a flat plate shape. Further, in the case of a wound type, an anode and/or a separator paper are not necessarily required.
本発明の化学酸化重合導電性高分子膜は、ピロール、チ
オフェン、アニリンまたはフランを酸化剤により重合さ
せたものであるが、好ましくはピロール重合体を用いる
。また該酸化剤としては、ヨウ素、臭素などのハロゲン
、五7フ化ヒ素、五7ツ化リンなどの金属ハロゲン化物
、硫酸、硝酸などのプロトン酸、過硫酸ナトリウム、過
硫酸カリウム、過硫酸アンモニウムなどの過硫酸塩、過
酸化水素、過酢酸などの過酸化物などを用いる。The chemically oxidized conductive polymer film of the present invention is obtained by polymerizing pyrrole, thiophene, aniline, or furan with an oxidizing agent, and preferably uses a pyrrole polymer. Examples of the oxidizing agent include halogens such as iodine and bromine, metal halides such as arsenic pentafluoride and phosphorous pentafluoride, protonic acids such as sulfuric acid and nitric acid, sodium persulfate, potassium persulfate, ammonium persulfate, etc. Peroxides such as persulfate, hydrogen peroxide, and peracetic acid are used.
化学酸化重合させる際の酸化剤による処理及び高分子単
量体による処理はその順序を問わない。The order of treatment with an oxidizing agent and treatment with a polymer monomer during chemical oxidative polymerization does not matter.
本発明の電解酸化重合導電性高分子膜は、ピロ−ル、チ
オフェン、アニリンまたはフランを電気化学的に酸化重
合せしめたものであり、好ましくはピロール重合体を用
いる。電解酸化重合においては、支持電解質として、陰
イオンがアルキルベンゼンスルホン酸、ベンゼンスルホ
ン酸、二Fロベンゼンスルホン酸などのスルホン酸7ニ
オン、過塩素酸アニオン、テトラ70ロホウ素、ヘキサ
フロロリンなどのハロゲン化物7ニオンを用い、溶媒と
して水または有機溶媒が用いられる。The electrolytically oxidatively polymerized conductive polymer membrane of the present invention is obtained by electrochemically oxidatively polymerizing pyrrole, thiophene, aniline, or furan, and preferably uses a pyrrole polymer. In electrolytic oxidative polymerization, as a supporting electrolyte, the anion is a sulfonic acid 7 anion such as alkylbenzenesulfonic acid, benzenesulfonic acid, diF lobenzenesulfonic acid, a perchlorate anion, a halogen such as tetra-70 loboron, hexafluoroline, etc. A compound 7 anion is used, and water or an organic solvent is used as a solvent.
本発明のコンデンサの構造は、誘電体酸化皮膜が薄いも
のや脆いものに特に有効であるが、誘電体酸化皮膜の厚
いものに対しても有効である。The capacitor structure of the present invention is particularly effective for capacitors with thin or brittle dielectric oxide films, but is also effective for capacitors with thick dielectric oxide films.
(実施例) 以下、実施例により本発明を具体的に説明する。(Example) Hereinafter, the present invention will be specifically explained with reference to Examples.
実施例1
タンタル線(長さ10ma+)により陽極リードを取り
出したタンク4し焼結体を1sovの電圧で陽極酸化し
、焼結体及び焼結体連結部分から5I@I11のところ
までの陽極リード部分に誘電体酸化皮膜を形成した(液
中容量3μF)。焼結体連結部分から2IllIOのと
ころまでの陽極リード部分に塩化ビニル樹脂(溶媒はメ
チルエ゛チルケトン80%およびアセトン20%よりな
る)を塗布し、そのまま80°Cで30分間乾燥した。Example 1 The anode lead was taken out from the tank 4 using a tantalum wire (length 10 m+), and the sintered body was anodized at a voltage of 1 sov, and the anode lead from the sintered body and the connecting part of the sintered body to the point 5I@I11 was removed. A dielectric oxide film was formed on the portion (liquid capacitance: 3 μF). Vinyl chloride resin (solvent consisting of 80% methyl ethyl ketone and 20% acetone) was applied to the anode lead portion from the sintered body connecting portion to 2IllIO, and then dried at 80° C. for 30 minutes.
次に該焼結体及び焼結体連結部分から1.511II1
1のところまでの陽極リード部分を、過硫酸アンモニウ
ム水溶液(3mol/I)中に10分間浸漬した6次い
で同部分を、ピロールのエタノール溶液(2輪ol/l
)に10分間浸漬して焼結体及び焼結体連結部分から1
.5mmのところまでの陽極リード部分上にピロールの
化学酸化重合導電性高分子膜を形成した。Next, from the sintered body and the sintered body connection part, 1.511II1
The anode lead part up to point 1 was immersed in an aqueous ammonium persulfate solution (3 mol/l) for 10 minutes.
) for 10 minutes.
.. A chemically oxidized conductive polymer film of pyrrole was formed on the anode lead portion up to 5 mm.
テトラエチルアンモニウムパラトルエンスルホン酸0.
7mo1/l及びピロール0.2mol/lを含む水溶
液に、前記処理を行なった焼結体及び焼結体連結部分か
ら1.5mmのところまでの陽極リード部分を浸漬した
。次に白金線を該陽極リード上に形成したピロールの化
学酸化重合導電性高分子膜に接触させ、この白金線を陽
極とし、ステンレス板を陰極として0.511IA/c
II12の定電流で電解重合を行なった。その結果、該
化学酸化重合導電性高分子膜上に電解酸化による濃緑色
のピロールの導電性高分子膜が形成された。Tetraethylammonium paratoluenesulfonic acid 0.
The sintered body subjected to the above treatment and the anode lead portion up to 1.5 mm from the sintered body connection portion were immersed in an aqueous solution containing 7 mol/l and pyrrole 0.2 mol/l. Next, the platinum wire was brought into contact with the chemically oxidized conductive polymer film of pyrrole formed on the anode lead, and the platinum wire was used as the anode and the stainless steel plate was used as the cathode at 0.511 IA/c.
Electrolytic polymerization was carried out at a constant current of II12. As a result, a dark green conductive polymer film of pyrrole was formed by electrolytic oxidation on the chemically oxidized conductive polymer film.
水及びアセトンで洗浄し、乾燥後、該電解酸化重合導電
性高分子膜表面に銀ペーストを塗布し、陰極リードを取
り付け、エポキシ樹脂でモールドすることによりコンデ
ンサを完成させた。After washing with water and acetone and drying, a silver paste was applied to the surface of the electrolytically oxidized conductive polymer membrane, a cathode lead was attached, and a capacitor was completed by molding with epoxy resin.
このコンデンサの1208.zにおける容量、損失角ノ
正接(t a nδ)、100KHzにおける等個直列
抵抗及び35Vにおける漏れ電流を第1表に示す。1208 of this capacitor. The capacitance at z, tangent of loss angle (tan δ), equal series resistance at 100 KHz and leakage current at 35V are shown in Table 1.
実施例2
粗面化したアルミニウムM(中511II11、長さ6
am)の端部にアルミニウム製リードボスをかしめ付
けにより取り付け、リードボス部にCP(カツノく一プ
ライ)線で陽極リードを取り付けた。アルミニウム箔を
直径4IIII11に捲回し、リードボス部と共に一化
成液中で20Vの電圧を印加し、陽極酸化により誘電体
酸化皮膜を形成させた(液中容量120μF)。該リー
ドボス部のアルミニウム箔より突出している部分(長さ
2mm)と長さ2mmの範囲にわたる陽極リードにエポ
キシ樹脂を塗布し、100℃で1時間硬化させた0次に
リードボス部のアルミニウム箔より突出している部分と
該アルミニウム箔を捲回しである部分(以下、コンデン
サ素子部分という)を、ピロール濃度が2mol/Iで
あるエタノール・水混合溶液(水・エタノール比は重量
比で1:1)に5分間浸漬した後、コンデンサ素子部分
を過硫酸アンモニウム3a+ol/l水溶液に浸漬し、
コンデンサ素子部分上に化学酸化重合導電性高分子膜を
形成せしめた。Example 2 Roughened aluminum M (medium 511II11, length 6
An aluminum lead boss was attached to the end of the aluminum plate by caulking, and an anode lead was attached to the lead boss portion using a CP (katsuno kuichi ply) wire. An aluminum foil was wound to a diameter of 4III11, and a voltage of 20 V was applied together with the lead boss in a chemical solution to form a dielectric oxide film by anodic oxidation (capacity in the solution: 120 μF). Epoxy resin was applied to the part of the lead boss that protruded from the aluminum foil (length 2 mm) and the anode lead over a length of 2 mm, and was cured at 100°C for 1 hour. The part where the aluminum foil is wound and the part where the aluminum foil is wound (hereinafter referred to as the capacitor element part) were placed in an ethanol/water mixed solution with a pyrrole concentration of 2 mol/I (water/ethanol ratio of 1:1 by weight). After 5 minutes of immersion, the capacitor element part was immersed in an ammonium persulfate 3a+ol/l aqueous solution,
A chemically oxidized and polymerized conductive polymer film was formed on the capacitor element.
テトラブチルアンモニウムパラトルエンスルホン酸を0
.8+*ol/l及びピロール0.2mを含む水溶液に
コンデンサ素子部分を浸漬し、コンデンサ素子部分の上
部の化学酸化重合導電性高分子膜にステンレス線を接触
させ、このステンレス線を陽極としステンレス板を陰極
として、0.5mAの定電流で電解重含を行なった。そ
の結果、コンデンサ素子部分に電解酸化重合による濃緑
色のピロールの導電性高分子膜が形成された。Tetrabutylammonium paratoluenesulfonic acid 0
.. The capacitor element part is immersed in an aqueous solution containing 8+*ol/l and 0.2 m of pyrrole, a stainless steel wire is brought into contact with the chemical oxidation polymerized conductive polymer film on the upper part of the capacitor element part, and the stainless steel wire is used as an anode to connect the stainless steel plate. Electrolytic loading was carried out with a constant current of 0.5 mA using as a cathode. As a result, a dark green conductive polymer film of pyrrole was formed on the capacitor element by electrolytic oxidation polymerization.
水及びアセトンで洗浄後、該電解酸化重合導電性高分子
膜表面に銀ペーストを塗布し、陰極リードを取り付けた
後、アルミニウムケースに入れエポキシ樹脂で封口した
。After washing with water and acetone, a silver paste was applied to the surface of the electrolytically oxidized conductive polymer membrane, a cathode lead was attached, and the membrane was placed in an aluminum case and sealed with epoxy resin.
このコンデンサの120Hzにおける容量、損失角の正
接(tanδ)、100KHzにおける等価直列抵抗及
びIOVにおける漏れ電流を第1表に示す。Table 1 shows the capacitance of this capacitor at 120 Hz, the tangent of the loss angle (tan δ), the equivalent series resistance at 100 KHz, and the leakage current at IOV.
比較例1
陽極リード部分に塩化ビル樹脂の塗布を省略した以外は
実施例1と同様の処理を行ないコンデンサを完成させた
。このコンデンサの120Hzにおける容量、損失角の
正接(tanδ)、100KHzにおける等価直列抵抗
及び3SVにおける漏れ電流を第1表にしめす。Comparative Example 1 A capacitor was completed in the same manner as in Example 1 except that the application of vinyl chloride resin to the anode lead portion was omitted. Table 1 shows the capacitance of this capacitor at 120 Hz, the tangent of the loss angle (tan δ), the equivalent series resistance at 100 KHz, and the leakage current at 3SV.
比較例2
リードボス部分及び陽極リード部分にエポキシ樹脂の塗
布を省略した以外は実施例2と同様の処理を行ないコン
デンサを完成させた。このコンデンサの120Hzにお
ける容量、損失角の正接(tanδ)、100KHzに
おける等価直列抵抗及び10Vにおける漏れ電流を第1
表に示す。Comparative Example 2 A capacitor was completed in the same manner as in Example 2, except that the application of epoxy resin to the lead boss portion and the anode lead portion was omitted. The capacitance of this capacitor at 120 Hz, the tangent of the loss angle (tan δ), the equivalent series resistance at 100 KHz, and the leakage current at 10 V are expressed as the first
Shown in the table.
(発明の効果)
保護層として誘電体酸化皮膜上の一定部分に絶縁性高分
子膜を形成し、この保護層表面を導電化し、導電化した
保護層より電解重合を行なうことにより、誘電体酸化皮
膜を損傷することなく漏れ電流の少ない固体電解コンデ
ンサを得ることができた。(Effects of the invention) An insulating polymer film is formed on a certain part of the dielectric oxide film as a protective layer, the surface of this protective layer is made conductive, and electrolytic polymerization is performed from the conductive protective layer. A solid electrolytic capacitor with low leakage current could be obtained without damaging the film.
第1図は、皮膜形成金属としてタンタルを用いこの微粉
を焼結し、中心部より陽極リードを取り出したコンデン
サの概略断面図である。第2図は、宿望コンデンサのリ
ード取り付は部付近の概略断面図である。
1・・皮膜形成金属 2・・誘電体酸化皮膜3・・絶
縁性高分子膜 4・・化学酸化重合導電性高分子lI
5・・電解酸化重合導電性高分子膜
6・・導電体
7・・陽極リード
特許出願人 日本カーリット株式会社FIG. 1 is a schematic cross-sectional view of a capacitor in which tantalum is used as a film-forming metal and fine powder is sintered, and an anode lead is taken out from the center. FIG. 2 is a schematic cross-sectional view of the vicinity of the lead attachment portion of the desired capacitor. 1. Film-forming metal 2. Dielectric oxide film 3. Insulating polymer film 4. Chemical oxidation polymerized conductive polymer II
5. Electrolytic oxidation polymerized conductive polymer membrane
6. Conductor 7. Anode lead patent applicant Nippon Carlit Co., Ltd.
Claims (1)
を取り付けた皮膜形成金属と、該陽極リードの一部に形
成された誘電体酸化皮膜と、該陽極リード上に形成され
た誘電体酸化皮膜の一部を被覆する絶縁性高分子膜と、
該絶縁性高分子膜の一部表面および皮膜形成金属の誘電
体酸化皮膜上に形成されたピロール、チオフェン、アニ
リンまたはフランの化学酸化重合導電性高分子膜と、該
化学酸化重合導電性高分子膜上に形成されたピロール、
チオフェン、アニリンまたはフランの電解酸化重合導電
性高分子膜とからなる固体電解コンデンサ。A film-forming metal to which an anode lead partially or entirely made of a film-forming metal is attached, a dielectric oxide film formed on a part of the anode lead, and one part of the dielectric oxide film formed on the anode lead. an insulating polymer film covering the
A chemical oxidation polymerized conductive polymer film of pyrrole, thiophene, aniline, or furan formed on a part of the surface of the insulating polymer film and the dielectric oxide film of the film-forming metal, and the chemical oxidation polymerized conductive polymer. Pyrrole formed on the membrane,
A solid electrolytic capacitor consisting of an electrolytically oxidized and polymerized conductive polymer film of thiophene, aniline, or furan.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26183787A JPH01105523A (en) | 1987-10-19 | 1987-10-19 | Solid electrolytic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26183787A JPH01105523A (en) | 1987-10-19 | 1987-10-19 | Solid electrolytic capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01105523A true JPH01105523A (en) | 1989-04-24 |
JPH0458165B2 JPH0458165B2 (en) | 1992-09-16 |
Family
ID=17367431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26183787A Granted JPH01105523A (en) | 1987-10-19 | 1987-10-19 | Solid electrolytic capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01105523A (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02303017A (en) * | 1989-05-18 | 1990-12-17 | Marcon Electron Co Ltd | Manufacture of solid state electrolytic capacitor |
JPH033220A (en) * | 1989-05-31 | 1991-01-09 | Marcon Electron Co Ltd | Tantalum solid-state electrolytic capacitor |
JPH03163816A (en) * | 1989-11-22 | 1991-07-15 | Japan Carlit Co Ltd:The | Manufacture of aluminum sintered body solid-state electrolyte capacitor |
JPH0430409A (en) * | 1990-05-25 | 1992-02-03 | Matsushita Electric Ind Co Ltd | Manufacture of solid electrolytic capacitor |
JPH04134833U (en) * | 1991-06-04 | 1992-12-15 | マルコン電子株式会社 | solid electrolytic capacitor |
JPH07201662A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Solid electrolytic capacitor |
JPH08153650A (en) * | 1994-11-29 | 1996-06-11 | Nec Toyama Ltd | Manufacture of solid-state electrolytic capacitor |
US5752986A (en) * | 1993-11-18 | 1998-05-19 | Nec Corporation | Method of manufacturing a solid electrolytic capacitor |
JPH10321471A (en) * | 1997-05-22 | 1998-12-04 | Nichicon Corp | Solid electrolytic capacitor and its manufacture |
JPH10321472A (en) * | 1997-05-22 | 1998-12-04 | Nichicon Corp | Solid electrolytic capacitor and its manufacture |
US6423103B1 (en) | 1999-01-25 | 2002-07-23 | Nec Tokin Toyama, Ltd. | Method for producing a solid electrolytic capacitor |
JP2004228439A (en) * | 2003-01-24 | 2004-08-12 | Matsushita Electric Ind Co Ltd | Method for manufacturing solid electrolytic capacitor |
CN103295787A (en) * | 2013-05-28 | 2013-09-11 | 中国振华(集团)新云电子元器件有限责任公司 | Method for processing dielectric oxide-film during manufacturing of electrolytic capacitors |
JP2015177088A (en) * | 2014-03-17 | 2015-10-05 | Necトーキン株式会社 | Solid electrolytic capacitor device, method for manufacturing the same, and solid electrolytic capacitor |
-
1987
- 1987-10-19 JP JP26183787A patent/JPH01105523A/en active Granted
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02303017A (en) * | 1989-05-18 | 1990-12-17 | Marcon Electron Co Ltd | Manufacture of solid state electrolytic capacitor |
JPH033220A (en) * | 1989-05-31 | 1991-01-09 | Marcon Electron Co Ltd | Tantalum solid-state electrolytic capacitor |
JPH03163816A (en) * | 1989-11-22 | 1991-07-15 | Japan Carlit Co Ltd:The | Manufacture of aluminum sintered body solid-state electrolyte capacitor |
JPH0430409A (en) * | 1990-05-25 | 1992-02-03 | Matsushita Electric Ind Co Ltd | Manufacture of solid electrolytic capacitor |
JPH04134833U (en) * | 1991-06-04 | 1992-12-15 | マルコン電子株式会社 | solid electrolytic capacitor |
US5752986A (en) * | 1993-11-18 | 1998-05-19 | Nec Corporation | Method of manufacturing a solid electrolytic capacitor |
JPH07201662A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Solid electrolytic capacitor |
JPH08153650A (en) * | 1994-11-29 | 1996-06-11 | Nec Toyama Ltd | Manufacture of solid-state electrolytic capacitor |
JPH10321471A (en) * | 1997-05-22 | 1998-12-04 | Nichicon Corp | Solid electrolytic capacitor and its manufacture |
JPH10321472A (en) * | 1997-05-22 | 1998-12-04 | Nichicon Corp | Solid electrolytic capacitor and its manufacture |
US6423103B1 (en) | 1999-01-25 | 2002-07-23 | Nec Tokin Toyama, Ltd. | Method for producing a solid electrolytic capacitor |
JP2004228439A (en) * | 2003-01-24 | 2004-08-12 | Matsushita Electric Ind Co Ltd | Method for manufacturing solid electrolytic capacitor |
CN103295787A (en) * | 2013-05-28 | 2013-09-11 | 中国振华(集团)新云电子元器件有限责任公司 | Method for processing dielectric oxide-film during manufacturing of electrolytic capacitors |
JP2015177088A (en) * | 2014-03-17 | 2015-10-05 | Necトーキン株式会社 | Solid electrolytic capacitor device, method for manufacturing the same, and solid electrolytic capacitor |
Also Published As
Publication number | Publication date |
---|---|
JPH0458165B2 (en) | 1992-09-16 |
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