JP7805297B2 - 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート - Google Patents

熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート

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Publication number
JP7805297B2
JP7805297B2 JP2022542644A JP2022542644A JP7805297B2 JP 7805297 B2 JP7805297 B2 JP 7805297B2 JP 2022542644 A JP2022542644 A JP 2022542644A JP 2022542644 A JP2022542644 A JP 2022542644A JP 7805297 B2 JP7805297 B2 JP 7805297B2
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JP
Japan
Prior art keywords
base plate
thermal expansion
coefficient
value
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022542644A
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English (en)
Japanese (ja)
Other versions
JP2023512448A5 (https=
JP2023512448A (ja
Inventor
サミュロン・エリック
アーリック・ダレル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2023512448A publication Critical patent/JP2023512448A/ja
Publication of JP2023512448A5 publication Critical patent/JP2023512448A5/ja
Priority to JP2026003259A priority Critical patent/JP2026065080A/ja
Application granted granted Critical
Publication of JP7805297B2 publication Critical patent/JP7805297B2/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Chemically Coating (AREA)
JP2022542644A 2020-01-13 2021-01-08 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート Active JP7805297B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2026003259A JP2026065080A (ja) 2020-01-13 2026-01-13 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062960417P 2020-01-13 2020-01-13
US62/960,417 2020-01-13
PCT/US2021/012593 WO2021146098A1 (en) 2020-01-13 2021-01-08 Mixed metal baseplates for improved thermal expansion matching with thermal oxide spraycoat

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026003259A Division JP2026065080A (ja) 2020-01-13 2026-01-13 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート

Publications (3)

Publication Number Publication Date
JP2023512448A JP2023512448A (ja) 2023-03-27
JP2023512448A5 JP2023512448A5 (https=) 2024-01-09
JP7805297B2 true JP7805297B2 (ja) 2026-01-23

Family

ID=76864772

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022542644A Active JP7805297B2 (ja) 2020-01-13 2021-01-08 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート
JP2026003259A Pending JP2026065080A (ja) 2020-01-13 2026-01-13 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2026003259A Pending JP2026065080A (ja) 2020-01-13 2026-01-13 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート

Country Status (5)

Country Link
US (1) US20230039670A1 (https=)
JP (2) JP7805297B2 (https=)
KR (1) KR20220126763A (https=)
CN (1) CN114981950A (https=)
WO (1) WO2021146098A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114830312A (zh) * 2019-12-17 2022-07-29 应用材料公司 腔室部件的表面成形和纹理化
JP7529412B2 (ja) * 2020-02-25 2024-08-06 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
CN117020177A (zh) * 2023-07-20 2023-11-10 东莞美景科技有限公司 一种中框制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020050246A1 (en) 2000-06-09 2002-05-02 Applied Materials, Inc. Full area temperature controlled electrostatic chuck and method of fabricating same
US20020096428A1 (en) 2000-05-31 2002-07-25 Tim Scott Discontinuous high-modulus fiber metal matrix composite for physical vapor deposition target backing plates and other thermal management applications
JP2005150370A (ja) 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
US20050183669A1 (en) 2004-02-24 2005-08-25 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US20120141661A1 (en) 2010-05-28 2012-06-07 Jaeyong Cho Substrate supports for semiconductor applications
US20140159325A1 (en) 2012-12-11 2014-06-12 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
JP2019194495A (ja) 2018-05-02 2019-11-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板支持アセンブリ用の多領域ガスケット

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0790421A (ja) * 1993-09-28 1995-04-04 Toyoda Spinning & Weaving Co Ltd 繊維強化複合金属材料とその製造方法
US5688358A (en) * 1995-03-08 1997-11-18 Applied Materials, Inc. R.F. plasma reactor with larger-than-wafer pedestal conductor
JP2009084686A (ja) * 2007-09-11 2009-04-23 Tokyo Electron Ltd 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
US9153463B2 (en) * 2011-11-25 2015-10-06 Nhk Spring Co., Ltd. Substrate support device
US10008399B2 (en) * 2015-05-19 2018-06-26 Applied Materials, Inc. Electrostatic puck assembly with metal bonded backing plate for high temperature processes
US11562890B2 (en) * 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020096428A1 (en) 2000-05-31 2002-07-25 Tim Scott Discontinuous high-modulus fiber metal matrix composite for physical vapor deposition target backing plates and other thermal management applications
US20020050246A1 (en) 2000-06-09 2002-05-02 Applied Materials, Inc. Full area temperature controlled electrostatic chuck and method of fabricating same
JP2005150370A (ja) 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
US20050183669A1 (en) 2004-02-24 2005-08-25 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US20120141661A1 (en) 2010-05-28 2012-06-07 Jaeyong Cho Substrate supports for semiconductor applications
US20140159325A1 (en) 2012-12-11 2014-06-12 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
JP2019194495A (ja) 2018-05-02 2019-11-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板支持アセンブリ用の多領域ガスケット

Also Published As

Publication number Publication date
KR20220126763A (ko) 2022-09-16
CN114981950A (zh) 2022-08-30
JP2026065080A (ja) 2026-04-14
WO2021146098A1 (en) 2021-07-22
JP2023512448A (ja) 2023-03-27
US20230039670A1 (en) 2023-02-09

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