CN114981950A - 用于改善与热氧化物喷涂层的热膨胀匹配的混合金属基板 - Google Patents

用于改善与热氧化物喷涂层的热膨胀匹配的混合金属基板 Download PDF

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Publication number
CN114981950A
CN114981950A CN202180009037.9A CN202180009037A CN114981950A CN 114981950 A CN114981950 A CN 114981950A CN 202180009037 A CN202180009037 A CN 202180009037A CN 114981950 A CN114981950 A CN 114981950A
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CN
China
Prior art keywords
substrate
thermal expansion
coefficient
metal
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180009037.9A
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English (en)
Chinese (zh)
Inventor
埃里克·萨穆隆
达雷尔·埃利希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN114981950A publication Critical patent/CN114981950A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Chemically Coating (AREA)
CN202180009037.9A 2020-01-13 2021-01-08 用于改善与热氧化物喷涂层的热膨胀匹配的混合金属基板 Pending CN114981950A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062960417P 2020-01-13 2020-01-13
US62/960,417 2020-01-13
PCT/US2021/012593 WO2021146098A1 (en) 2020-01-13 2021-01-08 Mixed metal baseplates for improved thermal expansion matching with thermal oxide spraycoat

Publications (1)

Publication Number Publication Date
CN114981950A true CN114981950A (zh) 2022-08-30

Family

ID=76864772

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180009037.9A Pending CN114981950A (zh) 2020-01-13 2021-01-08 用于改善与热氧化物喷涂层的热膨胀匹配的混合金属基板

Country Status (5)

Country Link
US (1) US20230039670A1 (https=)
JP (2) JP7805297B2 (https=)
KR (1) KR20220126763A (https=)
CN (1) CN114981950A (https=)
WO (1) WO2021146098A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025015898A1 (zh) * 2023-07-20 2025-01-23 东莞美景科技有限公司 一种中框制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114830312A (zh) * 2019-12-17 2022-07-29 应用材料公司 腔室部件的表面成形和纹理化
JP7529412B2 (ja) * 2020-02-25 2024-08-06 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0790421A (ja) * 1993-09-28 1995-04-04 Toyoda Spinning & Weaving Co Ltd 繊維強化複合金属材料とその製造方法
US5688358A (en) * 1995-03-08 1997-11-18 Applied Materials, Inc. R.F. plasma reactor with larger-than-wafer pedestal conductor
US6596139B2 (en) * 2000-05-31 2003-07-22 Honeywell International Inc. Discontinuous high-modulus fiber metal matrix composite for physical vapor deposition target backing plates and other thermal management applications
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP2005150370A (ja) * 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
JP2009084686A (ja) * 2007-09-11 2009-04-23 Tokyo Electron Ltd 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
US8619406B2 (en) * 2010-05-28 2013-12-31 Fm Industries, Inc. Substrate supports for semiconductor applications
US9153463B2 (en) * 2011-11-25 2015-10-06 Nhk Spring Co., Ltd. Substrate support device
US9685356B2 (en) * 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US10008399B2 (en) * 2015-05-19 2018-06-26 Applied Materials, Inc. Electrostatic puck assembly with metal bonded backing plate for high temperature processes
US10957572B2 (en) * 2018-05-02 2021-03-23 Applied Materials, Inc. Multi-zone gasket for substrate support assembly
US11562890B2 (en) * 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025015898A1 (zh) * 2023-07-20 2025-01-23 东莞美景科技有限公司 一种中框制备方法

Also Published As

Publication number Publication date
KR20220126763A (ko) 2022-09-16
JP2026065080A (ja) 2026-04-14
WO2021146098A1 (en) 2021-07-22
JP2023512448A (ja) 2023-03-27
US20230039670A1 (en) 2023-02-09
JP7805297B2 (ja) 2026-01-23

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