KR20220126763A - 열적 옥사이드 스프레이 코팅과 개선된 열 팽창 매칭을 위한 혼합된 금속 베이스플레이트들 - Google Patents

열적 옥사이드 스프레이 코팅과 개선된 열 팽창 매칭을 위한 혼합된 금속 베이스플레이트들 Download PDF

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Publication number
KR20220126763A
KR20220126763A KR1020227028033A KR20227028033A KR20220126763A KR 20220126763 A KR20220126763 A KR 20220126763A KR 1020227028033 A KR1020227028033 A KR 1020227028033A KR 20227028033 A KR20227028033 A KR 20227028033A KR 20220126763 A KR20220126763 A KR 20220126763A
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KR
South Korea
Prior art keywords
thermal expansion
coefficient
value
baseplate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020227028033A
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English (en)
Korean (ko)
Inventor
에릭 새뮬온
다렐 에를리히
Original Assignee
램 리써치 코포레이션
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Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20220126763A publication Critical patent/KR20220126763A/ko
Ceased legal-status Critical Current

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    • H01L21/68757—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/67103—
    • H01L21/67109—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Chemically Coating (AREA)
KR1020227028033A 2020-01-13 2021-01-08 열적 옥사이드 스프레이 코팅과 개선된 열 팽창 매칭을 위한 혼합된 금속 베이스플레이트들 Ceased KR20220126763A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062960417P 2020-01-13 2020-01-13
US62/960,417 2020-01-13
PCT/US2021/012593 WO2021146098A1 (en) 2020-01-13 2021-01-08 Mixed metal baseplates for improved thermal expansion matching with thermal oxide spraycoat

Publications (1)

Publication Number Publication Date
KR20220126763A true KR20220126763A (ko) 2022-09-16

Family

ID=76864772

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227028033A Ceased KR20220126763A (ko) 2020-01-13 2021-01-08 열적 옥사이드 스프레이 코팅과 개선된 열 팽창 매칭을 위한 혼합된 금속 베이스플레이트들

Country Status (5)

Country Link
US (1) US20230039670A1 (https=)
JP (2) JP7805297B2 (https=)
KR (1) KR20220126763A (https=)
CN (1) CN114981950A (https=)
WO (1) WO2021146098A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114830312A (zh) * 2019-12-17 2022-07-29 应用材料公司 腔室部件的表面成形和纹理化
JP7529412B2 (ja) * 2020-02-25 2024-08-06 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
CN117020177A (zh) * 2023-07-20 2023-11-10 东莞美景科技有限公司 一种中框制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0790421A (ja) * 1993-09-28 1995-04-04 Toyoda Spinning & Weaving Co Ltd 繊維強化複合金属材料とその製造方法
US5688358A (en) * 1995-03-08 1997-11-18 Applied Materials, Inc. R.F. plasma reactor with larger-than-wafer pedestal conductor
US6596139B2 (en) * 2000-05-31 2003-07-22 Honeywell International Inc. Discontinuous high-modulus fiber metal matrix composite for physical vapor deposition target backing plates and other thermal management applications
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP2005150370A (ja) * 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
JP2009084686A (ja) * 2007-09-11 2009-04-23 Tokyo Electron Ltd 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
US8619406B2 (en) * 2010-05-28 2013-12-31 Fm Industries, Inc. Substrate supports for semiconductor applications
US9153463B2 (en) * 2011-11-25 2015-10-06 Nhk Spring Co., Ltd. Substrate support device
US9685356B2 (en) * 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US10008399B2 (en) * 2015-05-19 2018-06-26 Applied Materials, Inc. Electrostatic puck assembly with metal bonded backing plate for high temperature processes
US10957572B2 (en) * 2018-05-02 2021-03-23 Applied Materials, Inc. Multi-zone gasket for substrate support assembly
US11562890B2 (en) * 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber

Also Published As

Publication number Publication date
CN114981950A (zh) 2022-08-30
JP2026065080A (ja) 2026-04-14
WO2021146098A1 (en) 2021-07-22
JP2023512448A (ja) 2023-03-27
US20230039670A1 (en) 2023-02-09
JP7805297B2 (ja) 2026-01-23

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