JP7803419B2 - 炭化珪素半導体装置 - Google Patents

炭化珪素半導体装置

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Publication number
JP7803419B2
JP7803419B2 JP2024540300A JP2024540300A JP7803419B2 JP 7803419 B2 JP7803419 B2 JP 7803419B2 JP 2024540300 A JP2024540300 A JP 2024540300A JP 2024540300 A JP2024540300 A JP 2024540300A JP 7803419 B2 JP7803419 B2 JP 7803419B2
Authority
JP
Japan
Prior art keywords
trench
region
gate
trenches
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024540300A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024034277A1 (https=
Inventor
啓樹 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of JPWO2024034277A1 publication Critical patent/JPWO2024034277A1/ja
Application granted granted Critical
Publication of JP7803419B2 publication Critical patent/JP7803419B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2024540300A 2022-08-09 2023-06-26 炭化珪素半導体装置 Active JP7803419B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022127271 2022-08-09
JP2022127271 2022-08-09
PCT/JP2023/023685 WO2024034277A1 (ja) 2022-08-09 2023-06-26 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024034277A1 JPWO2024034277A1 (https=) 2024-02-15
JP7803419B2 true JP7803419B2 (ja) 2026-01-21

Family

ID=89851410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024540300A Active JP7803419B2 (ja) 2022-08-09 2023-06-26 炭化珪素半導体装置

Country Status (5)

Country Link
US (1) US20240387724A1 (https=)
JP (1) JP7803419B2 (https=)
CN (1) CN118575281A (https=)
DE (1) DE112023000406T5 (https=)
WO (1) WO2024034277A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025129940A (ja) * 2024-02-26 2025-09-05 ミネベアパワーデバイス株式会社 半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012165018A (ja) 2012-04-27 2012-08-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2019068065A (ja) 2017-09-28 2019-04-25 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ ボディ領域とドリフト構造体との間にトレンチゲート構造体および垂直ｐｎ接合部を有する炭化ケイ素半導体デバイス
JP2019071314A (ja) 2017-10-05 2019-05-09 国立研究開発法人産業技術総合研究所 半導体装置
JP2019161199A (ja) 2017-05-17 2019-09-19 ローム株式会社 半導体装置
JP2019220727A (ja) 2019-10-07 2019-12-26 ローム株式会社 半導体装置
JP2022048926A (ja) 2020-09-15 2022-03-28 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP2022080586A (ja) 2020-11-18 2022-05-30 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5751213B2 (ja) 2012-06-14 2015-07-22 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6919159B2 (ja) 2016-07-29 2021-08-18 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012165018A (ja) 2012-04-27 2012-08-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2019161199A (ja) 2017-05-17 2019-09-19 ローム株式会社 半導体装置
JP2019068065A (ja) 2017-09-28 2019-04-25 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ ボディ領域とドリフト構造体との間にトレンチゲート構造体および垂直ｐｎ接合部を有する炭化ケイ素半導体デバイス
JP2019071314A (ja) 2017-10-05 2019-05-09 国立研究開発法人産業技術総合研究所 半導体装置
JP2019220727A (ja) 2019-10-07 2019-12-26 ローム株式会社 半導体装置
JP2022048926A (ja) 2020-09-15 2022-03-28 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP2022080586A (ja) 2020-11-18 2022-05-30 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置

Also Published As

Publication number Publication date
WO2024034277A1 (ja) 2024-02-15
CN118575281A (zh) 2024-08-30
US20240387724A1 (en) 2024-11-21
DE112023000406T5 (de) 2024-09-19
JPWO2024034277A1 (https=) 2024-02-15

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