JP7790282B2 - 半導体装置及び半導体装置製造方法 - Google Patents

半導体装置及び半導体装置製造方法

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Publication number
JP7790282B2
JP7790282B2 JP2022101843A JP2022101843A JP7790282B2 JP 7790282 B2 JP7790282 B2 JP 7790282B2 JP 2022101843 A JP2022101843 A JP 2022101843A JP 2022101843 A JP2022101843 A JP 2022101843A JP 7790282 B2 JP7790282 B2 JP 7790282B2
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JP
Japan
Prior art keywords
layer
thin
film layer
semiconductor element
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022101843A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024002572A (ja
JP2024002572A5 (https=
Inventor
皓宏 飯野
達 小酒
裕典 古田
元一郎 松尾
伸哉 十文字
寛人 川田
悠貴 篠▲原▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2022101843A priority Critical patent/JP7790282B2/ja
Priority to CN202310521890.XA priority patent/CN117293246A/zh
Priority to US18/320,618 priority patent/US20230420427A1/en
Priority to TW112118920A priority patent/TWI853584B/zh
Priority to EP23174426.9A priority patent/EP4312268A1/en
Publication of JP2024002572A publication Critical patent/JP2024002572A/ja
Publication of JP2024002572A5 publication Critical patent/JP2024002572A5/ja
Application granted granted Critical
Publication of JP7790282B2 publication Critical patent/JP7790282B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2022101843A 2022-06-24 2022-06-24 半導体装置及び半導体装置製造方法 Active JP7790282B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022101843A JP7790282B2 (ja) 2022-06-24 2022-06-24 半導体装置及び半導体装置製造方法
CN202310521890.XA CN117293246A (zh) 2022-06-24 2023-05-10 半导体装置、半导体装置制造方法和led显示器
US18/320,618 US20230420427A1 (en) 2022-06-24 2023-05-19 Semiconductor device, method of manufacturing the same, and led display device
TW112118920A TWI853584B (zh) 2022-06-24 2023-05-22 半導體裝置及其製造方法和led顯示裝置
EP23174426.9A EP4312268A1 (en) 2022-06-24 2023-05-22 Semiconductor device, method of manufacturing the same, and led display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022101843A JP7790282B2 (ja) 2022-06-24 2022-06-24 半導体装置及び半導体装置製造方法

Publications (3)

Publication Number Publication Date
JP2024002572A JP2024002572A (ja) 2024-01-11
JP2024002572A5 JP2024002572A5 (https=) 2024-12-18
JP7790282B2 true JP7790282B2 (ja) 2025-12-23

Family

ID=86497428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022101843A Active JP7790282B2 (ja) 2022-06-24 2022-06-24 半導体装置及び半導体装置製造方法

Country Status (5)

Country Link
US (1) US20230420427A1 (https=)
EP (1) EP4312268A1 (https=)
JP (1) JP7790282B2 (https=)
CN (1) CN117293246A (https=)
TW (1) TWI853584B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI883828B (zh) * 2024-02-20 2025-05-11 晶呈科技股份有限公司 垂直型發光二極體封裝結構及其製備方法
TWI906005B (zh) * 2024-10-28 2025-11-21 聯華電子股份有限公司 半導體結構及其製作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000089693A (ja) 1998-09-08 2000-03-31 Nec Corp フラットパネルディスプレイ
JP2010062351A (ja) 2008-09-04 2010-03-18 Oki Data Corp 積層半導体発光装置及び画像形成装置
JP2013235924A (ja) 2012-05-08 2013-11-21 Sharp Corp 半導体基板、半導体装置、および半導体基板の接合方法
JP2017139316A (ja) 2016-02-03 2017-08-10 ソニー株式会社 半導体装置および製造方法、並びに電子機器
US20200258869A1 (en) 2017-10-13 2020-08-13 PlayNitride Display Co., Ltd. Micro light emitting device display apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9281242B2 (en) * 2012-10-25 2016-03-08 Nanya Technology Corp. Through silicon via stacked structure and a method of manufacturing the same
KR102423813B1 (ko) * 2015-11-27 2022-07-22 삼성전자주식회사 반도체 소자
TWI878020B (zh) * 2017-12-25 2025-03-21 晶元光電股份有限公司 一種發光元件及其發光裝置
FR3094568B1 (fr) * 2019-03-29 2022-04-22 Commissariat Energie Atomique Procédé de fabrication d'un écran d'affichage émissif à LED tridimensionnelles
FR3109018A1 (fr) * 2020-04-06 2021-10-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif a matrice de diodes photo-emettrices et/ou photo-receptrices
JP2022023263A (ja) 2020-07-27 2022-02-08 沖電気工業株式会社 発光装置、発光ディスプレイ、及び画像表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000089693A (ja) 1998-09-08 2000-03-31 Nec Corp フラットパネルディスプレイ
JP2010062351A (ja) 2008-09-04 2010-03-18 Oki Data Corp 積層半導体発光装置及び画像形成装置
JP2013235924A (ja) 2012-05-08 2013-11-21 Sharp Corp 半導体基板、半導体装置、および半導体基板の接合方法
JP2017139316A (ja) 2016-02-03 2017-08-10 ソニー株式会社 半導体装置および製造方法、並びに電子機器
US20200258869A1 (en) 2017-10-13 2020-08-13 PlayNitride Display Co., Ltd. Micro light emitting device display apparatus

Also Published As

Publication number Publication date
CN117293246A (zh) 2023-12-26
JP2024002572A (ja) 2024-01-11
TWI853584B (zh) 2024-08-21
US20230420427A1 (en) 2023-12-28
EP4312268A1 (en) 2024-01-31
TW202418578A (zh) 2024-05-01

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