CN117293246A - 半导体装置、半导体装置制造方法和led显示器 - Google Patents

半导体装置、半导体装置制造方法和led显示器 Download PDF

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Publication number
CN117293246A
CN117293246A CN202310521890.XA CN202310521890A CN117293246A CN 117293246 A CN117293246 A CN 117293246A CN 202310521890 A CN202310521890 A CN 202310521890A CN 117293246 A CN117293246 A CN 117293246A
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CN
China
Prior art keywords
layer
thin film
film layer
anode
led display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310521890.XA
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English (en)
Chinese (zh)
Inventor
饭野皓宏
小酒达
古田裕典
松尾元一郎
十文字伸哉
川田宽人
篠原悠贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
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Oki Electric Industry Co Ltd
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Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of CN117293246A publication Critical patent/CN117293246A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN202310521890.XA 2022-06-24 2023-05-10 半导体装置、半导体装置制造方法和led显示器 Pending CN117293246A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-101843 2022-06-24
JP2022101843A JP7790282B2 (ja) 2022-06-24 2022-06-24 半導体装置及び半導体装置製造方法

Publications (1)

Publication Number Publication Date
CN117293246A true CN117293246A (zh) 2023-12-26

Family

ID=86497428

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310521890.XA Pending CN117293246A (zh) 2022-06-24 2023-05-10 半导体装置、半导体装置制造方法和led显示器

Country Status (5)

Country Link
US (1) US20230420427A1 (https=)
EP (1) EP4312268A1 (https=)
JP (1) JP7790282B2 (https=)
CN (1) CN117293246A (https=)
TW (1) TWI853584B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI883828B (zh) * 2024-02-20 2025-05-11 晶呈科技股份有限公司 垂直型發光二極體封裝結構及其製備方法
TWI906005B (zh) * 2024-10-28 2025-11-21 聯華電子股份有限公司 半導體結構及其製作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2959566B1 (ja) 1998-09-08 1999-10-06 日本電気株式会社 フラットパネルディスプレイ
JP4555880B2 (ja) 2008-09-04 2010-10-06 株式会社沖データ 積層半導体発光装置及び画像形成装置
JP2013235924A (ja) 2012-05-08 2013-11-21 Sharp Corp 半導体基板、半導体装置、および半導体基板の接合方法
US9281242B2 (en) * 2012-10-25 2016-03-08 Nanya Technology Corp. Through silicon via stacked structure and a method of manufacturing the same
KR102423813B1 (ko) * 2015-11-27 2022-07-22 삼성전자주식회사 반도체 소자
JP2017139316A (ja) 2016-02-03 2017-08-10 ソニー株式会社 半導体装置および製造方法、並びに電子機器
US11367713B2 (en) 2017-10-13 2022-06-21 PlayNitride Display Co., Ltd. Micro light emitting device display apparatus
TWI878020B (zh) * 2017-12-25 2025-03-21 晶元光電股份有限公司 一種發光元件及其發光裝置
FR3094568B1 (fr) * 2019-03-29 2022-04-22 Commissariat Energie Atomique Procédé de fabrication d'un écran d'affichage émissif à LED tridimensionnelles
FR3109018A1 (fr) * 2020-04-06 2021-10-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif a matrice de diodes photo-emettrices et/ou photo-receptrices
JP2022023263A (ja) 2020-07-27 2022-02-08 沖電気工業株式会社 発光装置、発光ディスプレイ、及び画像表示装置

Also Published As

Publication number Publication date
JP2024002572A (ja) 2024-01-11
JP7790282B2 (ja) 2025-12-23
TWI853584B (zh) 2024-08-21
US20230420427A1 (en) 2023-12-28
EP4312268A1 (en) 2024-01-31
TW202418578A (zh) 2024-05-01

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