JP7784762B2 - 磁気メモリ素子、情報処理システム、及び磁気メモリ素子の制御方法 - Google Patents

磁気メモリ素子、情報処理システム、及び磁気メモリ素子の制御方法

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Publication number
JP7784762B2
JP7784762B2 JP2024524858A JP2024524858A JP7784762B2 JP 7784762 B2 JP7784762 B2 JP 7784762B2 JP 2024524858 A JP2024524858 A JP 2024524858A JP 2024524858 A JP2024524858 A JP 2024524858A JP 7784762 B2 JP7784762 B2 JP 7784762B2
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JP
Japan
Prior art keywords
layer
magnetic
memory element
spin
antiferromagnetic
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JP2024524858A
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English (en)
Japanese (ja)
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JPWO2023234269A1 (https=
Inventor
知 中▲辻▼
友也 肥後
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
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University of Tokyo NUC
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Publication of JPWO2023234269A1 publication Critical patent/JPWO2023234269A1/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2024524858A 2022-05-30 2023-05-29 磁気メモリ素子、情報処理システム、及び磁気メモリ素子の制御方法 Active JP7784762B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022088105 2022-05-30
JP2022088105 2022-05-30
PCT/JP2023/019977 WO2023234269A1 (ja) 2022-05-30 2023-05-29 磁気メモリ素子、情報処理システム、及び磁気メモリ素子の制御方法

Publications (2)

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JPWO2023234269A1 JPWO2023234269A1 (https=) 2023-12-07
JP7784762B2 true JP7784762B2 (ja) 2025-12-12

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JP2024524858A Active JP7784762B2 (ja) 2022-05-30 2023-05-29 磁気メモリ素子、情報処理システム、及び磁気メモリ素子の制御方法

Country Status (4)

Country Link
US (1) US20250351732A1 (https=)
EP (1) EP4535954A1 (https=)
JP (1) JP7784762B2 (https=)
WO (1) WO2023234269A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025127136A1 (ja) * 2023-12-14 2025-06-19 Jsr株式会社 Ａｎｔｉｆｅｒｒｏｍａｇｎｅｔｉｃ ｍａｔｅｒｉａｌ ｗｉｔｈ ｌａｒｇｅ ａｎｏｍａｌｏｕｓ ｈａｌｌ ｅｆｆｅｃｔ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017018391A1 (ja) 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
JP2017139446A (ja) 2015-12-16 2017-08-10 エイチジーエスティーネザーランドビーブイ 改善された切り換え効率のためのスピン軌道トルクビット設計
US20200212291A1 (en) 2018-12-28 2020-07-02 Intel Corporation Antiferromagnet based spin orbit torque memory device
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017018391A1 (ja) 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
US20180301177A1 (en) 2015-07-24 2018-10-18 The University Of Tokyo Memory element
JP2017139446A (ja) 2015-12-16 2017-08-10 エイチジーエスティーネザーランドビーブイ 改善された切り換え効率のためのスピン軌道トルクビット設計
US20200212291A1 (en) 2018-12-28 2020-07-02 Intel Corporation Antiferromagnet based spin orbit torque memory device
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
US20220149269A1 (en) 2019-02-15 2022-05-12 The University Of Tokyo Spintronics element and magnetic memory device

Also Published As

Publication number Publication date
US20250351732A1 (en) 2025-11-13
JPWO2023234269A1 (https=) 2023-12-07
WO2023234269A1 (ja) 2023-12-07
EP4535954A1 (en) 2025-04-09

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