JPWO2023234269A1 - - Google Patents
Info
- Publication number
- JPWO2023234269A1 JPWO2023234269A1 JP2024524858A JP2024524858A JPWO2023234269A1 JP WO2023234269 A1 JPWO2023234269 A1 JP WO2023234269A1 JP 2024524858 A JP2024524858 A JP 2024524858A JP 2024524858 A JP2024524858 A JP 2024524858A JP WO2023234269 A1 JPWO2023234269 A1 JP WO2023234269A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022088105 | 2022-05-30 | ||
| JP2022088105 | 2022-05-30 | ||
| PCT/JP2023/019977 WO2023234269A1 (ja) | 2022-05-30 | 2023-05-29 | 磁気メモリ素子、情報処理システム、及び磁気メモリ素子の制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023234269A1 true JPWO2023234269A1 (https=) | 2023-12-07 |
| JP7784762B2 JP7784762B2 (ja) | 2025-12-12 |
Family
ID=89025102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024524858A Active JP7784762B2 (ja) | 2022-05-30 | 2023-05-29 | 磁気メモリ素子、情報処理システム、及び磁気メモリ素子の制御方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250351732A1 (https=) |
| EP (1) | EP4535954A1 (https=) |
| JP (1) | JP7784762B2 (https=) |
| WO (1) | WO2023234269A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025127136A1 (ja) * | 2023-12-14 | 2025-06-19 | Jsr株式会社 | Ａｎｔｉｆｅｒｒｏｍａｇｎｅｔｉｃ ｍａｔｅｒｉａｌ ｗｉｔｈ ｌａｒｇｅ ａｎｏｍａｌｏｕｓ ｈａｌｌ ｅｆｆｅｃｔ |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017018391A1 (ja) * | 2015-07-24 | 2017-02-02 | 国立大学法人東京大学 | メモリ素子 |
| JP2017139446A (ja) * | 2015-12-16 | 2017-08-10 | エイチジーエスティーネザーランドビーブイ | 改善された切り換え効率のためのスピン軌道トルクビット設計 |
| US20200212291A1 (en) * | 2018-12-28 | 2020-07-02 | Intel Corporation | Antiferromagnet based spin orbit torque memory device |
| WO2020166722A1 (ja) * | 2019-02-15 | 2020-08-20 | 国立大学法人東京大学 | スピントロニクス素子及び磁気メモリ装置 |
-
2023
- 2023-05-29 EP EP23816026.1A patent/EP4535954A1/en active Pending
- 2023-05-29 WO PCT/JP2023/019977 patent/WO2023234269A1/ja not_active Ceased
- 2023-05-29 US US18/869,003 patent/US20250351732A1/en active Pending
- 2023-05-29 JP JP2024524858A patent/JP7784762B2/ja active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017018391A1 (ja) * | 2015-07-24 | 2017-02-02 | 国立大学法人東京大学 | メモリ素子 |
| US20180301177A1 (en) * | 2015-07-24 | 2018-10-18 | The University Of Tokyo | Memory element |
| JP2017139446A (ja) * | 2015-12-16 | 2017-08-10 | エイチジーエスティーネザーランドビーブイ | 改善された切り換え効率のためのスピン軌道トルクビット設計 |
| US20200212291A1 (en) * | 2018-12-28 | 2020-07-02 | Intel Corporation | Antiferromagnet based spin orbit torque memory device |
| WO2020166722A1 (ja) * | 2019-02-15 | 2020-08-20 | 国立大学法人東京大学 | スピントロニクス素子及び磁気メモリ装置 |
| US20220149269A1 (en) * | 2019-02-15 | 2022-05-12 | The University Of Tokyo | Spintronics element and magnetic memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250351732A1 (en) | 2025-11-13 |
| JP7784762B2 (ja) | 2025-12-12 |
| WO2023234269A1 (ja) | 2023-12-07 |
| EP4535954A1 (en) | 2025-04-09 |
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