JPWO2024150833A1 - - Google Patents
Info
- Publication number
- JPWO2024150833A1 JPWO2024150833A1 JP2024570412A JP2024570412A JPWO2024150833A1 JP WO2024150833 A1 JPWO2024150833 A1 JP WO2024150833A1 JP 2024570412 A JP2024570412 A JP 2024570412A JP 2024570412 A JP2024570412 A JP 2024570412A JP WO2024150833 A1 JPWO2024150833 A1 JP WO2024150833A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363479747P | 2023-01-13 | 2023-01-13 | |
| PCT/JP2024/000871 WO2024150833A1 (ja) | 2023-01-13 | 2024-01-15 | 磁気抵抗効果素子および磁気メモリ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024150833A1 true JPWO2024150833A1 (https=) | 2024-07-18 |
Family
ID=91897060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024570412A Pending JPWO2024150833A1 (https=) | 2023-01-13 | 2024-01-15 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024150833A1 (https=) |
| WO (1) | WO2024150833A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103299370B (zh) * | 2010-11-17 | 2016-01-20 | 纽约大学 | 双极性自旋转移切换 |
| EP2479759A1 (en) * | 2011-01-19 | 2012-07-25 | Crocus Technology S.A. | Low power magnetic random access memory cell |
| WO2017018391A1 (ja) * | 2015-07-24 | 2017-02-02 | 国立大学法人東京大学 | メモリ素子 |
| EP3731289B1 (en) * | 2019-04-23 | 2024-06-12 | IMEC vzw | A magnetic tunnel junction device |
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2024
- 2024-01-15 WO PCT/JP2024/000871 patent/WO2024150833A1/ja not_active Ceased
- 2024-01-15 JP JP2024570412A patent/JPWO2024150833A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024150833A1 (ja) | 2024-07-18 |