JP7775000B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法

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Publication number
JP7775000B2
JP7775000B2 JP2021145691A JP2021145691A JP7775000B2 JP 7775000 B2 JP7775000 B2 JP 7775000B2 JP 2021145691 A JP2021145691 A JP 2021145691A JP 2021145691 A JP2021145691 A JP 2021145691A JP 7775000 B2 JP7775000 B2 JP 7775000B2
Authority
JP
Japan
Prior art keywords
fluid
substrate
processing
processing vessel
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021145691A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023038790A (ja
JP2023038790A5 (https=
Inventor
伸一郎 下村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2021145691A priority Critical patent/JP7775000B2/ja
Priority to TW111132043A priority patent/TW202314916A/zh
Priority to CN202211046132.9A priority patent/CN115775751A/zh
Priority to KR1020220110720A priority patent/KR20230036531A/ko
Priority to US17/929,340 priority patent/US20230073624A1/en
Publication of JP2023038790A publication Critical patent/JP2023038790A/ja
Publication of JP2023038790A5 publication Critical patent/JP2023038790A5/ja
Priority to JP2025186596A priority patent/JP2026009360A/ja
Application granted granted Critical
Publication of JP7775000B2 publication Critical patent/JP7775000B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
JP2021145691A 2021-09-07 2021-09-07 基板処理装置および基板処理方法 Active JP7775000B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021145691A JP7775000B2 (ja) 2021-09-07 2021-09-07 基板処理装置および基板処理方法
TW111132043A TW202314916A (zh) 2021-09-07 2022-08-25 基板處理裝置及基板處理方法
CN202211046132.9A CN115775751A (zh) 2021-09-07 2022-08-30 基片处理装置和基片处理方法
KR1020220110720A KR20230036531A (ko) 2021-09-07 2022-09-01 기판 처리 장치 및 기판 처리 방법
US17/929,340 US20230073624A1 (en) 2021-09-07 2022-09-02 Substrate processing apparatus and substrate processing method
JP2025186596A JP2026009360A (ja) 2021-09-07 2025-11-05 基板処理装置および基板処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021145691A JP7775000B2 (ja) 2021-09-07 2021-09-07 基板処理装置および基板処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025186596A Division JP2026009360A (ja) 2021-09-07 2025-11-05 基板処理装置および基板処理方法

Publications (3)

Publication Number Publication Date
JP2023038790A JP2023038790A (ja) 2023-03-17
JP2023038790A5 JP2023038790A5 (https=) 2024-07-18
JP7775000B2 true JP7775000B2 (ja) 2025-11-25

Family

ID=85385701

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021145691A Active JP7775000B2 (ja) 2021-09-07 2021-09-07 基板処理装置および基板処理方法
JP2025186596A Pending JP2026009360A (ja) 2021-09-07 2025-11-05 基板処理装置および基板処理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025186596A Pending JP2026009360A (ja) 2021-09-07 2025-11-05 基板処理装置および基板処理方法

Country Status (5)

Country Link
US (1) US20230073624A1 (https=)
JP (2) JP7775000B2 (https=)
KR (1) KR20230036531A (https=)
CN (1) CN115775751A (https=)
TW (1) TW202314916A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7353213B2 (ja) * 2020-02-28 2023-09-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
TWI902052B (zh) * 2022-11-16 2025-10-21 日商斯庫林集團股份有限公司 處理腔室之洗淨方法、清掃用配件及基板處理系統
JP2024072489A (ja) * 2022-11-16 2024-05-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理システム
JP2024072488A (ja) * 2022-11-16 2024-05-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
KR102780098B1 (ko) * 2022-12-27 2025-03-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JPWO2025018134A1 (https=) * 2023-07-14 2025-01-23

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002336675A (ja) 2001-05-17 2002-11-26 Dainippon Screen Mfg Co Ltd 高圧処理装置及び方法
JP2011192835A (ja) 2010-03-15 2011-09-29 Toshiba Corp 超臨界乾燥方法および超臨界乾燥装置
JP2019067863A (ja) 2017-09-29 2019-04-25 東京エレクトロン株式会社 基板処理装置
US20200227253A1 (en) 2019-01-14 2020-07-16 Samsung Electronics Co., Ltd. Supercritical drying apparatus and method of drying substrate using the same
JP2020126974A (ja) 2019-02-06 2020-08-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021145691A (ja) 2020-03-16 2021-09-27 株式会社平和 遊技機

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6755776B2 (ja) 2016-11-04 2020-09-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記録媒体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002336675A (ja) 2001-05-17 2002-11-26 Dainippon Screen Mfg Co Ltd 高圧処理装置及び方法
JP2011192835A (ja) 2010-03-15 2011-09-29 Toshiba Corp 超臨界乾燥方法および超臨界乾燥装置
JP2019067863A (ja) 2017-09-29 2019-04-25 東京エレクトロン株式会社 基板処理装置
US20200227253A1 (en) 2019-01-14 2020-07-16 Samsung Electronics Co., Ltd. Supercritical drying apparatus and method of drying substrate using the same
JP2020126974A (ja) 2019-02-06 2020-08-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021145691A (ja) 2020-03-16 2021-09-27 株式会社平和 遊技機

Also Published As

Publication number Publication date
JP2023038790A (ja) 2023-03-17
CN115775751A (zh) 2023-03-10
KR20230036531A (ko) 2023-03-14
JP2026009360A (ja) 2026-01-19
US20230073624A1 (en) 2023-03-09
TW202314916A (zh) 2023-04-01

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