JP7769636B2 - ノイズ低減のため入力増幅器を有するバンドギャップ基準 - Google Patents

ノイズ低減のため入力増幅器を有するバンドギャップ基準

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Publication number
JP7769636B2
JP7769636B2 JP2022567498A JP2022567498A JP7769636B2 JP 7769636 B2 JP7769636 B2 JP 7769636B2 JP 2022567498 A JP2022567498 A JP 2022567498A JP 2022567498 A JP2022567498 A JP 2022567498A JP 7769636 B2 JP7769636 B2 JP 7769636B2
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Japan
Prior art keywords
coupled
bjt
transistor
voltage
resistor
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JP2022567498A
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English (en)
Japanese (ja)
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JP2024500588A (ja
JP2024500588A5 (enExample
Inventor
シャイラヤ クリシュナン サンディープ
ヴィシュワナス タラム
ラシュワント ジャドハヴ アクシャイ
Original Assignee
テキサス インスツルメンツ インコーポレイテッド
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Publication of JP2024500588A5 publication Critical patent/JP2024500588A5/ja
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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45564—Indexing scheme relating to differential amplifiers the IC comprising one or more extra current sources

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
JP2022567498A 2020-05-07 2021-05-07 ノイズ低減のため入力増幅器を有するバンドギャップ基準 Active JP7769636B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN202041019448 2020-05-07
PCT/US2021/031349 WO2021226495A1 (en) 2020-05-07 2021-05-07 Bandgap reference with input amplifier for noise reduction

Publications (3)

Publication Number Publication Date
JP2024500588A JP2024500588A (ja) 2024-01-10
JP2024500588A5 JP2024500588A5 (enExample) 2024-05-02
JP7769636B2 true JP7769636B2 (ja) 2025-11-13

Family

ID=78411577

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JP2022567498A Active JP7769636B2 (ja) 2020-05-07 2021-05-07 ノイズ低減のため入力増幅器を有するバンドギャップ基準

Country Status (4)

Country Link
US (2) US11914411B2 (enExample)
JP (1) JP7769636B2 (enExample)
CN (1) CN115516400B (enExample)
WO (1) WO2021226495A1 (enExample)

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Publication number Priority date Publication date Assignee Title
US11757459B2 (en) * 2022-02-17 2023-09-12 Caelus Technologies Limited Cascode Class-A differential reference buffer using source followers for a multi-channel interleaved Analog-to-Digital Converter (ADC)
CN116337254A (zh) * 2023-01-10 2023-06-27 中云信安（深圳）科技有限公司 一种应用于安全芯片的温度检测电路
CN115877908B (zh) * 2023-03-02 2023-04-28 盈力半导体(上海)有限公司 一种带隙电压基准电路及其二阶非线性校正电路和芯片
CN116755502B (zh) * 2023-08-17 2023-10-20 深圳奥简科技有限公司 一种源极跟随器驱动电路、电子电路及电子设备
US12288587B2 (en) 2023-09-28 2025-04-29 Bae Systems Information And Electronic Systems Integration Inc. High dynamic range track and hold amplifier output stage using low voltage devices
CN117873264B (zh) * 2023-12-19 2024-11-15 深圳精控集成半导体有限公司 带隙基准电路及芯片、电子设备

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2010521029A (ja) 2007-03-13 2010-06-17 アナログ・デバイシズ・インコーポレーテッド 低ノイズ基準電圧回路
CN107656569A (zh) 2017-10-10 2018-02-02 杭州百隆电子有限公司 一种带隙基准源

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NL9002392A (nl) 1990-11-02 1992-06-01 Philips Nv Bandgap-referentie-schakeling.
JP3643389B2 (ja) * 1994-07-27 2005-04-27 株式会社東芝 定電圧回路
JPH0993052A (ja) * 1995-09-25 1997-04-04 Sony Corp 多入力差動増幅回路
US5834926A (en) * 1997-08-11 1998-11-10 Motorola, Inc. Bandgap reference circuit
US7193454B1 (en) * 2004-07-08 2007-03-20 Analog Devices, Inc. Method and a circuit for producing a PTAT voltage, and a method and a circuit for producing a bandgap voltage reference
US20080157746A1 (en) * 2006-12-29 2008-07-03 Mediatek Inc. Bandgap Reference Circuits
KR20100077271A (ko) * 2008-12-29 2010-07-08 주식회사 동부하이텍 기준전압 발생회로
CN101813960B (zh) * 2010-01-20 2013-10-23 香港应用科技研究院有限公司 一个精确的带隙基准源的双向微调方法和电路
CN102880220B (zh) * 2011-07-12 2016-01-06 联咏科技股份有限公司 温度系数电流触发产生器及温度系数电流触发产生模块
CN202711108U (zh) * 2012-05-09 2013-01-30 快捷半导体(苏州)有限公司 一种低压带隙电压基准电路
CN103677031B (zh) * 2013-05-31 2015-01-28 国家电网公司 一种提供零温度系数电压和电流的方法及电路
CN203673379U (zh) * 2013-11-14 2014-06-25 上海华虹集成电路有限责任公司 带隙参考电压产生电路
CN204536974U (zh) * 2015-04-20 2015-08-05 华东交通大学 线性稳压器的改进电路结构
US10353414B2 (en) * 2017-04-07 2019-07-16 Texas Instruments Incorporated Bandgap reference circuit with inverted bandgap pairs
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US10281946B1 (en) * 2017-11-10 2019-05-07 Texas Instruments Incorporated Input current limit in digital input receivers
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JP2010521029A (ja) 2007-03-13 2010-06-17 アナログ・デバイシズ・インコーポレーテッド 低ノイズ基準電圧回路
CN107656569A (zh) 2017-10-10 2018-02-02 杭州百隆电子有限公司 一种带隙基准源

Also Published As

Publication number Publication date
WO2021226495A1 (en) 2021-11-11
CN115516400B (zh) 2026-04-03
US20210349490A1 (en) 2021-11-11
US11914411B2 (en) 2024-02-27
CN115516400A (zh) 2022-12-23
JP2024500588A (ja) 2024-01-10
US20240168510A1 (en) 2024-05-23
US12189411B2 (en) 2025-01-07

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