JP7766256B2 - 半導体装置及び撮像装置 - Google Patents

半導体装置及び撮像装置

Info

Publication number
JP7766256B2
JP7766256B2 JP2022561318A JP2022561318A JP7766256B2 JP 7766256 B2 JP7766256 B2 JP 7766256B2 JP 2022561318 A JP2022561318 A JP 2022561318A JP 2022561318 A JP2022561318 A JP 2022561318A JP 7766256 B2 JP7766256 B2 JP 7766256B2
Authority
JP
Japan
Prior art keywords
electrode
insulating layer
semiconductor device
overlapping portion
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022561318A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022102273A1 (https=
JPWO2022102273A5 (https=
Inventor
貴裕 小柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of JPWO2022102273A1 publication Critical patent/JPWO2022102273A1/ja
Publication of JPWO2022102273A5 publication Critical patent/JPWO2022102273A5/ja
Application granted granted Critical
Publication of JP7766256B2 publication Critical patent/JP7766256B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/043—Manufacture or treatment of capacitors having no potential barriers using patterning processes to form electrode extensions, e.g. etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2022561318A 2020-11-10 2021-10-01 半導体装置及び撮像装置 Active JP7766256B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020187527 2020-11-10
JP2020187527 2020-11-10
PCT/JP2021/036368 WO2022102273A1 (ja) 2020-11-10 2021-10-01 半導体装置及び撮像装置

Publications (3)

Publication Number Publication Date
JPWO2022102273A1 JPWO2022102273A1 (https=) 2022-05-19
JPWO2022102273A5 JPWO2022102273A5 (https=) 2023-07-25
JP7766256B2 true JP7766256B2 (ja) 2025-11-10

Family

ID=81601138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022561318A Active JP7766256B2 (ja) 2020-11-10 2021-10-01 半導体装置及び撮像装置

Country Status (4)

Country Link
US (1) US12457813B2 (https=)
JP (1) JP7766256B2 (https=)
CN (1) CN116325121A (https=)
WO (1) WO2022102273A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11605703B2 (en) * 2020-12-11 2023-03-14 Nanya Technology Corporation Semiconductor device with capacitors having shared electrode and method for fabricating the same
CN119522646A (zh) * 2022-08-17 2025-02-25 索尼半导体解决方案公司 光检测装置
US20240313041A1 (en) * 2023-03-15 2024-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Treatment of Electrodes of MIM Capacitors
JP2026069840A (ja) * 2024-10-15 2026-04-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006500772A (ja) 2002-09-23 2006-01-05 インターナショナル・ビジネス・マシーンズ・コーポレーション デュアル・ダマシン構造におけるｍｉｍキャパシタの構造および製作方法
JP2009224565A (ja) 2008-03-17 2009-10-01 Toshiba Corp 不揮発性半導体記憶装置
JP2013168548A (ja) 2012-02-16 2013-08-29 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
WO2019193787A1 (ja) 2018-04-04 2019-10-10 パナソニックＩｐマネジメント株式会社 電子デバイス

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4928748B2 (ja) * 2005-06-27 2012-05-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101065140B1 (ko) 2008-03-17 2011-09-16 가부시끼가이샤 도시바 반도체 기억 장치
US10658455B2 (en) 2017-09-28 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Metal insulator metal capacitor structure having high capacitance
CN110164850B (zh) 2018-02-15 2024-10-11 松下知识产权经营株式会社 电容元件和电容元件的制造方法
KR102618358B1 (ko) * 2019-06-05 2023-12-28 삼성전자주식회사 이미지 센서
US11018169B2 (en) * 2019-08-19 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal capacitor structure to increase capacitance density

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006500772A (ja) 2002-09-23 2006-01-05 インターナショナル・ビジネス・マシーンズ・コーポレーション デュアル・ダマシン構造におけるｍｉｍキャパシタの構造および製作方法
JP2009224565A (ja) 2008-03-17 2009-10-01 Toshiba Corp 不揮発性半導体記憶装置
JP2013168548A (ja) 2012-02-16 2013-08-29 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
WO2019193787A1 (ja) 2018-04-04 2019-10-10 パナソニックＩｐマネジメント株式会社 電子デバイス

Also Published As

Publication number Publication date
CN116325121A (zh) 2023-06-23
JPWO2022102273A1 (https=) 2022-05-19
US12457813B2 (en) 2025-10-28
WO2022102273A1 (ja) 2022-05-19
US20230261012A1 (en) 2023-08-17

Similar Documents

Publication Publication Date Title
US12160673B2 (en) Imaging device including signal line and unit pixel cell including charge storage region
JP7766256B2 (ja) 半導体装置及び撮像装置
US11670652B2 (en) Imaging device including a photoelectric converter and a capacitive element having a dielectric film sandwiched between electrodes and a mode switching transistor
US11223786B2 (en) Imaging device including signal line and unit pixel cell including charge storage region
US12074177B2 (en) Imaging device and camera system
US20190288021A1 (en) Imaging device having photoelectric converters, wiring layer, and capacitor
US20250098357A1 (en) Imaging device
JP2024110299A (ja) 半導体装置の製造方法及び半導体装置
CN118077052A (zh) 摄像装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230413

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240704

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250930

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251014

R150 Certificate of patent or registration of utility model

Ref document number: 7766256

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150