CN116325121A - 半导体装置及摄像装置 - Google Patents

半导体装置及摄像装置 Download PDF

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Publication number
CN116325121A
CN116325121A CN202180071457.XA CN202180071457A CN116325121A CN 116325121 A CN116325121 A CN 116325121A CN 202180071457 A CN202180071457 A CN 202180071457A CN 116325121 A CN116325121 A CN 116325121A
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CN
China
Prior art keywords
electrode
semiconductor device
insulating layer
capacitive element
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180071457.XA
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English (en)
Chinese (zh)
Inventor
小柳贵裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
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Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN116325121A publication Critical patent/CN116325121A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/043—Manufacture or treatment of capacitors having no potential barriers using patterning processes to form electrode extensions, e.g. etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

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  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202180071457.XA 2020-11-10 2021-10-01 半导体装置及摄像装置 Pending CN116325121A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020187527 2020-11-10
JP2020-187527 2020-11-10
PCT/JP2021/036368 WO2022102273A1 (ja) 2020-11-10 2021-10-01 半導体装置及び撮像装置

Publications (1)

Publication Number Publication Date
CN116325121A true CN116325121A (zh) 2023-06-23

Family

ID=81601138

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180071457.XA Pending CN116325121A (zh) 2020-11-10 2021-10-01 半导体装置及摄像装置

Country Status (4)

Country Link
US (1) US12457813B2 (https=)
JP (1) JP7766256B2 (https=)
CN (1) CN116325121A (https=)
WO (1) WO2022102273A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114628321A (zh) * 2020-12-11 2022-06-14 南亚科技股份有限公司 半导体元件及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119522646A (zh) * 2022-08-17 2025-02-25 索尼半导体解决方案公司 光检测装置
US20240313041A1 (en) * 2023-03-15 2024-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Treatment of Electrodes of MIM Capacitors
JP2026069840A (ja) * 2024-10-15 2026-04-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794262B2 (en) * 2002-09-23 2004-09-21 Infineon Technologies Ag MIM capacitor structures and fabrication methods in dual-damascene structures
JP4928748B2 (ja) * 2005-06-27 2012-05-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101065140B1 (ko) 2008-03-17 2011-09-16 가부시끼가이샤 도시바 반도체 기억 장치
JP4660566B2 (ja) * 2008-03-17 2011-03-30 株式会社東芝 不揮発性半導体記憶装置
JP2013168548A (ja) 2012-02-16 2013-08-29 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US10658455B2 (en) 2017-09-28 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Metal insulator metal capacitor structure having high capacitance
CN110164850B (zh) 2018-02-15 2024-10-11 松下知识产权经营株式会社 电容元件和电容元件的制造方法
CN111656511B (zh) * 2018-04-04 2024-08-27 松下知识产权经营株式会社 电子设备
KR102618358B1 (ko) * 2019-06-05 2023-12-28 삼성전자주식회사 이미지 센서
US11018169B2 (en) * 2019-08-19 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal capacitor structure to increase capacitance density

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114628321A (zh) * 2020-12-11 2022-06-14 南亚科技股份有限公司 半导体元件及其制备方法

Also Published As

Publication number Publication date
JP7766256B2 (ja) 2025-11-10
JPWO2022102273A1 (https=) 2022-05-19
US12457813B2 (en) 2025-10-28
WO2022102273A1 (ja) 2022-05-19
US20230261012A1 (en) 2023-08-17

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