JP7758199B2 - 電子部品 - Google Patents

電子部品

Info

Publication number
JP7758199B2
JP7758199B2 JP2024533590A JP2024533590A JP7758199B2 JP 7758199 B2 JP7758199 B2 JP 7758199B2 JP 2024533590 A JP2024533590 A JP 2024533590A JP 2024533590 A JP2024533590 A JP 2024533590A JP 7758199 B2 JP7758199 B2 JP 7758199B2
Authority
JP
Japan
Prior art keywords
conductor
substrate
electronic component
inductor
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024533590A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024014212A1 (https=
JPWO2024014212A5 (https=
Inventor
孝昭 水野
俊幸 中磯
健司 豊島
由雅 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of JPWO2024014212A1 publication Critical patent/JPWO2024014212A1/ja
Publication of JPWO2024014212A5 publication Critical patent/JPWO2024014212A5/ja
Application granted granted Critical
Publication of JP7758199B2 publication Critical patent/JP7758199B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0078—Constructional details comprising spiral inductor on a substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Coils Or Transformers For Communication (AREA)
JP2024533590A 2022-07-13 2023-06-13 電子部品 Active JP7758199B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022112586 2022-07-13
JP2022112586 2022-07-13
PCT/JP2023/021861 WO2024014212A1 (ja) 2022-07-13 2023-06-13 電子部品

Publications (3)

Publication Number Publication Date
JPWO2024014212A1 JPWO2024014212A1 (https=) 2024-01-18
JPWO2024014212A5 JPWO2024014212A5 (https=) 2025-02-21
JP7758199B2 true JP7758199B2 (ja) 2025-10-22

Family

ID=89536668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024533590A Active JP7758199B2 (ja) 2022-07-13 2023-06-13 電子部品

Country Status (4)

Country Link
US (1) US20250150050A1 (https=)
JP (1) JP7758199B2 (https=)
CN (1) CN119563217A (https=)
WO (1) WO2024014212A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240194729A1 (en) * 2022-12-13 2024-06-13 Psemi Corporation Three-Dimensional Integrated Circuit Resistors

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249832A (ja) 2002-02-22 2003-09-05 Murata Mfg Co Ltd Ｅｍｉフィルタ
JP2005020577A (ja) 2003-06-27 2005-01-20 Murata Mfg Co Ltd Ｌｃ共振子
JP2010239380A (ja) 2009-03-31 2010-10-21 Tdk Corp 積層型電子部品
JP2011233807A (ja) 2010-04-30 2011-11-17 Panasonic Corp 半導体装置およびその製造方法
WO2015037374A1 (ja) 2013-09-13 2015-03-19 株式会社村田製作所 インダクタおよび帯域除去フィルタ
JP2019186696A (ja) 2018-04-06 2019-10-24 株式会社村田製作所 電子部品

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249832A (ja) 2002-02-22 2003-09-05 Murata Mfg Co Ltd Ｅｍｉフィルタ
JP2005020577A (ja) 2003-06-27 2005-01-20 Murata Mfg Co Ltd Ｌｃ共振子
JP2010239380A (ja) 2009-03-31 2010-10-21 Tdk Corp 積層型電子部品
JP2011233807A (ja) 2010-04-30 2011-11-17 Panasonic Corp 半導体装置およびその製造方法
WO2015037374A1 (ja) 2013-09-13 2015-03-19 株式会社村田製作所 インダクタおよび帯域除去フィルタ
JP2019186696A (ja) 2018-04-06 2019-10-24 株式会社村田製作所 電子部品

Also Published As

Publication number Publication date
JPWO2024014212A1 (https=) 2024-01-18
US20250150050A1 (en) 2025-05-08
CN119563217A (zh) 2025-03-04
WO2024014212A1 (ja) 2024-01-18

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