JP7753193B2 - 撮像素子および撮像装置 - Google Patents

撮像素子および撮像装置

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Publication number
JP7753193B2
JP7753193B2 JP2022512044A JP2022512044A JP7753193B2 JP 7753193 B2 JP7753193 B2 JP 7753193B2 JP 2022512044 A JP2022512044 A JP 2022512044A JP 2022512044 A JP2022512044 A JP 2022512044A JP 7753193 B2 JP7753193 B2 JP 7753193B2
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Japan
Prior art keywords
layer
electrode
photoelectric conversion
semiconductor layer
energy level
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Active
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JP2022512044A
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English (en)
Japanese (ja)
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JPWO2021200509A1 (https=
Inventor
正大 定榮
晋太郎 平田
富之 湯川
涼介 鈴木
博史 中野
利彦 林
遼太郎 高口
巖 八木
賢一 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Sony Semiconductor Solutions Corp
Sony Group Corp
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Sony Corp
Sony Semiconductor Solutions Corp
Sony Group Corp
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Publication of JPWO2021200509A1 publication Critical patent/JPWO2021200509A1/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Light Receiving Elements (AREA)
JP2022512044A 2020-03-31 2021-03-24 撮像素子および撮像装置 Active JP7753193B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020064017 2020-03-31
JP2020064017 2020-03-31
JP2021045945 2021-03-19
JP2021045945 2021-03-19
PCT/JP2021/012401 WO2021200509A1 (ja) 2020-03-31 2021-03-24 撮像素子および撮像装置

Publications (2)

Publication Number Publication Date
JPWO2021200509A1 JPWO2021200509A1 (https=) 2021-10-07
JP7753193B2 true JP7753193B2 (ja) 2025-10-14

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JP2022512044A Active JP7753193B2 (ja) 2020-03-31 2021-03-24 撮像素子および撮像装置

Country Status (7)

Country Link
US (1) US12464829B2 (https=)
EP (1) EP4131386A4 (https=)
JP (1) JP7753193B2 (https=)
KR (1) KR102920107B1 (https=)
CN (1) CN115428157A (https=)
TW (1) TWI889786B (https=)
WO (1) WO2021200509A1 (https=)

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JP7524082B2 (ja) * 2019-02-15 2024-07-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
TW202347747A (zh) * 2022-02-14 2023-12-01 日商索尼半導體解決方案公司 光電轉換元件及光檢測裝置
US20260107624A1 (en) * 2022-09-30 2026-04-16 Sony Semiconductor Solutions Corporation Photoelectric conversion element and photodetector
CN121925965A (zh) * 2023-10-20 2026-04-24 索尼半导体解决方案公司 光检测装置

Citations (5)

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JP2014165399A (ja) 2013-02-26 2014-09-08 Toshiba Corp 固体撮像装置
WO2019035252A1 (ja) 2017-08-16 2019-02-21 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP2019047294A (ja) 2017-08-31 2019-03-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の制御方法
WO2020017330A1 (ja) 2018-07-17 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2020026851A1 (ja) 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置

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JP5460118B2 (ja) * 2008-05-14 2014-04-02 富士フイルム株式会社 光電変換素子、及び撮像素子
JP5325473B2 (ja) 2008-06-20 2013-10-23 富士フイルム株式会社 光電変換素子及び固体撮像素子
JP2013020998A (ja) 2011-07-07 2013-01-31 Renesas Electronics Corp 半導体装置およびその製造方法
JP2014127545A (ja) * 2012-12-26 2014-07-07 Sony Corp 固体撮像素子およびこれを備えた固体撮像装置
JP2015043370A (ja) * 2013-08-26 2015-03-05 シャープ株式会社 光電変換装置
CN107851652A (zh) * 2015-11-12 2018-03-27 松下知识产权经营株式会社 光传感器
JP6780421B2 (ja) * 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
WO2017208806A1 (ja) * 2016-06-02 2017-12-07 ソニー株式会社 撮像素子および撮像素子の製造方法ならびに撮像装置
EP3496147A4 (en) * 2016-08-03 2019-08-14 Sony Corporation IMAGING ELEMENT, MULTILAYER IMAGING ELEMENT AND SOLID STATE IMAGING DEVICE
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Also Published As

Publication number Publication date
US12464829B2 (en) 2025-11-04
EP4131386A4 (en) 2023-09-27
US20230215880A1 (en) 2023-07-06
JPWO2021200509A1 (https=) 2021-10-07
KR20220160567A (ko) 2022-12-06
EP4131386A1 (en) 2023-02-08
TWI889786B (zh) 2025-07-11
TW202143469A (zh) 2021-11-16
WO2021200509A1 (ja) 2021-10-07
CN115428157A (zh) 2022-12-02
KR102920107B1 (ko) 2026-01-30

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