CN115428157A - 摄像元件和摄像装置 - Google Patents

摄像元件和摄像装置 Download PDF

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Publication number
CN115428157A
CN115428157A CN202180023417.8A CN202180023417A CN115428157A CN 115428157 A CN115428157 A CN 115428157A CN 202180023417 A CN202180023417 A CN 202180023417A CN 115428157 A CN115428157 A CN 115428157A
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China
Prior art keywords
layer
electrode
photoelectric conversion
semiconductor layer
image pickup
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Pending
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CN202180023417.8A
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English (en)
Chinese (zh)
Inventor
定荣正大
平田晋太郎
汤川富之
铃木凉介
中野博史
林利彦
高口辽太郎
八木岩
村田贤一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Sony Group Corp
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Sony Semiconductor Solutions Corp
Sony Group Corp
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Publication date
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Publication of CN115428157A publication Critical patent/CN115428157A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Light Receiving Elements (AREA)
CN202180023417.8A 2020-03-31 2021-03-24 摄像元件和摄像装置 Pending CN115428157A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020064017 2020-03-31
JP2020-064017 2020-03-31
JP2021-045945 2021-03-19
JP2021045945 2021-03-19
PCT/JP2021/012401 WO2021200509A1 (ja) 2020-03-31 2021-03-24 撮像素子および撮像装置

Publications (1)

Publication Number Publication Date
CN115428157A true CN115428157A (zh) 2022-12-02

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US (1) US12464829B2 (https=)
EP (1) EP4131386A4 (https=)
JP (1) JP7753193B2 (https=)
KR (1) KR102920107B1 (https=)
CN (1) CN115428157A (https=)
TW (1) TWI889786B (https=)
WO (1) WO2021200509A1 (https=)

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JP7524082B2 (ja) * 2019-02-15 2024-07-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
TW202347747A (zh) * 2022-02-14 2023-12-01 日商索尼半導體解決方案公司 光電轉換元件及光檢測裝置
US20260107624A1 (en) * 2022-09-30 2026-04-16 Sony Semiconductor Solutions Corporation Photoelectric conversion element and photodetector
CN121925965A (zh) * 2023-10-20 2026-04-24 索尼半导体解决方案公司 光检测装置

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JP5460118B2 (ja) * 2008-05-14 2014-04-02 富士フイルム株式会社 光電変換素子、及び撮像素子
JP5325473B2 (ja) 2008-06-20 2013-10-23 富士フイルム株式会社 光電変換素子及び固体撮像素子
JP2013020998A (ja) 2011-07-07 2013-01-31 Renesas Electronics Corp 半導体装置およびその製造方法
JP2014127545A (ja) * 2012-12-26 2014-07-07 Sony Corp 固体撮像素子およびこれを備えた固体撮像装置
JP5925713B2 (ja) 2013-02-26 2016-05-25 株式会社東芝 固体撮像装置
JP2015043370A (ja) * 2013-08-26 2015-03-05 シャープ株式会社 光電変換装置
CN107851652A (zh) * 2015-11-12 2018-03-27 松下知识产权经营株式会社 光传感器
JP6780421B2 (ja) * 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
WO2017208806A1 (ja) * 2016-06-02 2017-12-07 ソニー株式会社 撮像素子および撮像素子の製造方法ならびに撮像装置
EP3496147A4 (en) * 2016-08-03 2019-08-14 Sony Corporation IMAGING ELEMENT, MULTILAYER IMAGING ELEMENT AND SOLID STATE IMAGING DEVICE
JP2019036641A (ja) * 2017-08-16 2019-03-07 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019035252A1 (ja) * 2017-08-16 2019-02-21 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP2019047294A (ja) 2017-08-31 2019-03-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の制御方法
KR102491856B1 (ko) * 2017-12-18 2023-01-27 삼성전자주식회사 복수의 양자점층을 포함하는 광전 소자
WO2019151049A1 (ja) 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子、固体撮像装置及び電子装置
WO2019150987A1 (ja) 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置
US11552268B2 (en) * 2018-03-19 2023-01-10 Sony Semiconductor Solutions Corporation Solid-state imaging element and solid-state imaging device
CN118922006A (zh) 2018-07-17 2024-11-08 索尼半导体解决方案公司 摄像元件、层叠型摄像元件和固态摄像装置
US12063801B2 (en) 2018-07-31 2024-08-13 Sony Semiconductor Solutions Corporation Imaging element and imaging device including an organic semiconductor material
JP7174590B2 (ja) 2018-10-19 2022-11-17 株式会社日立製作所 温度検知材料、それを用いた温度検知インク、温度インジケータ、及び物品管理システム
JP7277327B2 (ja) 2019-09-20 2023-05-18 ファナック株式会社 射出成形機の制御装置および制御方法

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US12464829B2 (en) 2025-11-04
EP4131386A4 (en) 2023-09-27
US20230215880A1 (en) 2023-07-06
JPWO2021200509A1 (https=) 2021-10-07
KR20220160567A (ko) 2022-12-06
EP4131386A1 (en) 2023-02-08
TWI889786B (zh) 2025-07-11
TW202143469A (zh) 2021-11-16
WO2021200509A1 (ja) 2021-10-07
JP7753193B2 (ja) 2025-10-14
KR102920107B1 (ko) 2026-01-30

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