JP7751664B2 - 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム - Google Patents

電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム

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Publication number
JP7751664B2
JP7751664B2 JP2023573529A JP2023573529A JP7751664B2 JP 7751664 B2 JP7751664 B2 JP 7751664B2 JP 2023573529 A JP2023573529 A JP 2023573529A JP 2023573529 A JP2023573529 A JP 2023573529A JP 7751664 B2 JP7751664 B2 JP 7751664B2
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JP
Japan
Prior art keywords
wavelength
target
manufacturing
pulses
assigned
Prior art date
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Active
Application number
JP2023573529A
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English (en)
Japanese (ja)
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JPWO2023135658A1 (https=
Inventor
光一 藤井
孝信 石原
理 若林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gigaphoton Inc
Original Assignee
Gigaphoton Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gigaphoton Inc filed Critical Gigaphoton Inc
Publication of JPWO2023135658A1 publication Critical patent/JPWO2023135658A1/ja
Application granted granted Critical
Publication of JP7751664B2 publication Critical patent/JP7751664B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2023573529A 2022-01-11 2022-01-11 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム Active JP7751664B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/000609 WO2023135658A1 (ja) 2022-01-11 2022-01-11 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム

Publications (2)

Publication Number Publication Date
JPWO2023135658A1 JPWO2023135658A1 (https=) 2023-07-20
JP7751664B2 true JP7751664B2 (ja) 2025-10-08

Family

ID=87278633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023573529A Active JP7751664B2 (ja) 2022-01-11 2022-01-11 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム

Country Status (4)

Country Link
US (1) US20240322521A1 (https=)
JP (1) JP7751664B2 (https=)
CN (1) CN118541646A (https=)
WO (1) WO2023135658A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007511074A (ja) 2003-11-03 2007-04-26 サイマー インコーポレイテッド Ｒｅｌａｘガス放電レーザリソグラフィ光源
JP2008140956A (ja) 2006-12-01 2008-06-19 Canon Inc 露光装置
JP2009010231A (ja) 2007-06-28 2009-01-15 Canon Inc 露光装置およびデバイス製造方法
JP2009141154A (ja) 2007-12-06 2009-06-25 Canon Inc 走査露光装置及びデバイス製造方法
JP7454038B2 (ja) 2020-03-19 2024-03-21 ギガフォトン株式会社 露光システム、レーザ制御パラメータの作成方法、及び電子デバイスの製造方法
JP7461454B2 (ja) 2020-03-19 2024-04-03 ギガフォトン株式会社 露光システム及び電子デバイスの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3325350B2 (ja) * 1993-08-16 2002-09-17 株式会社東芝 レーザ露光装置及び半導体装置の製造方法
US6853653B2 (en) * 1997-07-22 2005-02-08 Cymer, Inc. Laser spectral engineering for lithographic process
JP2013062484A (ja) * 2011-08-24 2013-04-04 Gigaphoton Inc レーザ装置
WO2020095418A1 (ja) * 2018-11-08 2020-05-14 ギガフォトン株式会社 レーザシステム、及び電子デバイスの製造方法
CN115485625B (zh) * 2020-05-20 2025-12-16 极光先进雷射株式会社 窄带化气体激光装置、波长控制方法和电子器件的制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007511074A (ja) 2003-11-03 2007-04-26 サイマー インコーポレイテッド Ｒｅｌａｘガス放電レーザリソグラフィ光源
JP2008140956A (ja) 2006-12-01 2008-06-19 Canon Inc 露光装置
JP2009010231A (ja) 2007-06-28 2009-01-15 Canon Inc 露光装置およびデバイス製造方法
JP2009141154A (ja) 2007-12-06 2009-06-25 Canon Inc 走査露光装置及びデバイス製造方法
JP7454038B2 (ja) 2020-03-19 2024-03-21 ギガフォトン株式会社 露光システム、レーザ制御パラメータの作成方法、及び電子デバイスの製造方法
JP7461454B2 (ja) 2020-03-19 2024-04-03 ギガフォトン株式会社 露光システム及び電子デバイスの製造方法

Also Published As

Publication number Publication date
US20240322521A1 (en) 2024-09-26
WO2023135658A1 (ja) 2023-07-20
CN118541646A (zh) 2024-08-23
JPWO2023135658A1 (https=) 2023-07-20

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