JPWO2023135658A1 - - Google Patents

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Publication number
JPWO2023135658A1
JPWO2023135658A1 JP2023573529A JP2023573529A JPWO2023135658A1 JP WO2023135658 A1 JPWO2023135658 A1 JP WO2023135658A1 JP 2023573529 A JP2023573529 A JP 2023573529A JP 2023573529 A JP2023573529 A JP 2023573529A JP WO2023135658 A1 JPWO2023135658 A1 JP WO2023135658A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023573529A
Other languages
Japanese (ja)
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JP7751664B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2023135658A1 publication Critical patent/JPWO2023135658A1/ja
Application granted granted Critical
Publication of JP7751664B2 publication Critical patent/JP7751664B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2023573529A 2022-01-11 2022-01-11 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム Active JP7751664B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/000609 WO2023135658A1 (ja) 2022-01-11 2022-01-11 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム

Publications (2)

Publication Number Publication Date
JPWO2023135658A1 true JPWO2023135658A1 (https=) 2023-07-20
JP7751664B2 JP7751664B2 (ja) 2025-10-08

Family

ID=87278633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023573529A Active JP7751664B2 (ja) 2022-01-11 2022-01-11 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム

Country Status (4)

Country Link
US (1) US20240322521A1 (https=)
JP (1) JP7751664B2 (https=)
CN (1) CN118541646A (https=)
WO (1) WO2023135658A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758393A (ja) * 1993-08-16 1995-03-03 Toshiba Corp 狭帯域レーザ発振方法及びその装置及びこれを用いたレーザ露光装置
JP2007511074A (ja) * 2003-11-03 2007-04-26 サイマー インコーポレイテッド Ｒｅｌａｘガス放電レーザリソグラフィ光源
JP2008140956A (ja) * 2006-12-01 2008-06-19 Canon Inc 露光装置
JP2009010231A (ja) * 2007-06-28 2009-01-15 Canon Inc 露光装置およびデバイス製造方法
JP2009141154A (ja) * 2007-12-06 2009-06-25 Canon Inc 走査露光装置及びデバイス製造方法
JP7454038B2 (ja) * 2020-03-19 2024-03-21 ギガフォトン株式会社 露光システム、レーザ制御パラメータの作成方法、及び電子デバイスの製造方法
JP7461454B2 (ja) * 2020-03-19 2024-04-03 ギガフォトン株式会社 露光システム及び電子デバイスの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6853653B2 (en) * 1997-07-22 2005-02-08 Cymer, Inc. Laser spectral engineering for lithographic process
JP2013062484A (ja) * 2011-08-24 2013-04-04 Gigaphoton Inc レーザ装置
WO2020095418A1 (ja) * 2018-11-08 2020-05-14 ギガフォトン株式会社 レーザシステム、及び電子デバイスの製造方法
CN115485625B (zh) * 2020-05-20 2025-12-16 极光先进雷射株式会社 窄带化气体激光装置、波长控制方法和电子器件的制造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758393A (ja) * 1993-08-16 1995-03-03 Toshiba Corp 狭帯域レーザ発振方法及びその装置及びこれを用いたレーザ露光装置
JP2007511074A (ja) * 2003-11-03 2007-04-26 サイマー インコーポレイテッド Ｒｅｌａｘガス放電レーザリソグラフィ光源
JP2008140956A (ja) * 2006-12-01 2008-06-19 Canon Inc 露光装置
JP2009010231A (ja) * 2007-06-28 2009-01-15 Canon Inc 露光装置およびデバイス製造方法
JP2009141154A (ja) * 2007-12-06 2009-06-25 Canon Inc 走査露光装置及びデバイス製造方法
JP7454038B2 (ja) * 2020-03-19 2024-03-21 ギガフォトン株式会社 露光システム、レーザ制御パラメータの作成方法、及び電子デバイスの製造方法
JP7461454B2 (ja) * 2020-03-19 2024-04-03 ギガフォトン株式会社 露光システム及び電子デバイスの製造方法

Also Published As

Publication number Publication date
US20240322521A1 (en) 2024-09-26
JP7751664B2 (ja) 2025-10-08
WO2023135658A1 (ja) 2023-07-20
CN118541646A (zh) 2024-08-23

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