CN118541646A - 电子器件的制造方法、激光装置和波长序列计算系统 - Google Patents

电子器件的制造方法、激光装置和波长序列计算系统 Download PDF

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Publication number
CN118541646A
CN118541646A CN202280082214.0A CN202280082214A CN118541646A CN 118541646 A CN118541646 A CN 118541646A CN 202280082214 A CN202280082214 A CN 202280082214A CN 118541646 A CN118541646 A CN 118541646A
Authority
CN
China
Prior art keywords
wavelength
laser
target
pulses
allocated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280082214.0A
Other languages
English (en)
Chinese (zh)
Inventor
藤井光一
石原孝信
若林理
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gigaphoton Inc
Original Assignee
Gigaphoton Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gigaphoton Inc filed Critical Gigaphoton Inc
Publication of CN118541646A publication Critical patent/CN118541646A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN202280082214.0A 2022-01-11 2022-01-11 电子器件的制造方法、激光装置和波长序列计算系统 Pending CN118541646A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/000609 WO2023135658A1 (ja) 2022-01-11 2022-01-11 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム

Publications (1)

Publication Number Publication Date
CN118541646A true CN118541646A (zh) 2024-08-23

Family

ID=87278633

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280082214.0A Pending CN118541646A (zh) 2022-01-11 2022-01-11 电子器件的制造方法、激光装置和波长序列计算系统

Country Status (4)

Country Link
US (1) US20240322521A1 (https=)
JP (1) JP7751664B2 (https=)
CN (1) CN118541646A (https=)
WO (1) WO2023135658A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3325350B2 (ja) * 1993-08-16 2002-09-17 株式会社東芝 レーザ露光装置及び半導体装置の製造方法
US6853653B2 (en) * 1997-07-22 2005-02-08 Cymer, Inc. Laser spectral engineering for lithographic process
US7088758B2 (en) 2001-07-27 2006-08-08 Cymer, Inc. Relax gas discharge laser lithography light source
JP2008140956A (ja) 2006-12-01 2008-06-19 Canon Inc 露光装置
JP2009010231A (ja) 2007-06-28 2009-01-15 Canon Inc 露光装置およびデバイス製造方法
JP2009141154A (ja) 2007-12-06 2009-06-25 Canon Inc 走査露光装置及びデバイス製造方法
JP2013062484A (ja) * 2011-08-24 2013-04-04 Gigaphoton Inc レーザ装置
WO2020095418A1 (ja) * 2018-11-08 2020-05-14 ギガフォトン株式会社 レーザシステム、及び電子デバイスの製造方法
CN115039033B (zh) 2020-03-19 2025-12-16 极光先进雷射株式会社 曝光系统和电子器件的制造方法
CN115039032B (zh) 2020-03-19 2026-02-17 极光先进雷射株式会社 曝光系统、激光控制参数的生成方法和电子器件的制造方法
CN115485625B (zh) * 2020-05-20 2025-12-16 极光先进雷射株式会社 窄带化气体激光装置、波长控制方法和电子器件的制造方法

Also Published As

Publication number Publication date
US20240322521A1 (en) 2024-09-26
JP7751664B2 (ja) 2025-10-08
WO2023135658A1 (ja) 2023-07-20
JPWO2023135658A1 (https=) 2023-07-20

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