JP7721041B1 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法

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Publication number
JP7721041B1
JP7721041B1 JP2025522996A JP2025522996A JP7721041B1 JP 7721041 B1 JP7721041 B1 JP 7721041B1 JP 2025522996 A JP2025522996 A JP 2025522996A JP 2025522996 A JP2025522996 A JP 2025522996A JP 7721041 B1 JP7721041 B1 JP 7721041B1
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JP
Japan
Prior art keywords
trench
electrode
insulating film
impurity region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2025522996A
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English (en)
Japanese (ja)
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JPWO2025173150A5 (https=
JPWO2025173150A1 (https=
Inventor
皓洋 小山
俊明 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2025125350A priority Critical patent/JP2025142269A/ja
Application granted granted Critical
Publication of JP7721041B1 publication Critical patent/JP7721041B1/ja
Publication of JPWO2025173150A1 publication Critical patent/JPWO2025173150A1/ja
Publication of JPWO2025173150A5 publication Critical patent/JPWO2025173150A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2025522996A 2024-02-15 2024-02-15 半導体装置及び半導体装置の製造方法 Active JP7721041B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025125350A JP2025142269A (ja) 2024-02-15 2025-07-28 半導体装置及び半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/005165 WO2025173150A1 (ja) 2024-02-15 2024-02-15 半導体装置及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025125350A Division JP2025142269A (ja) 2024-02-15 2025-07-28 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP7721041B1 true JP7721041B1 (ja) 2025-08-08
JPWO2025173150A1 JPWO2025173150A1 (https=) 2025-08-21
JPWO2025173150A5 JPWO2025173150A5 (https=) 2026-01-21

Family

ID=96656979

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2025522996A Active JP7721041B1 (ja) 2024-02-15 2024-02-15 半導体装置及び半導体装置の製造方法
JP2025125350A Pending JP2025142269A (ja) 2024-02-15 2025-07-28 半導体装置及び半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025125350A Pending JP2025142269A (ja) 2024-02-15 2025-07-28 半導体装置及び半導体装置の製造方法

Country Status (2)

Country Link
JP (2) JP7721041B1 (https=)
WO (1) WO2025173150A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006035877A1 (ja) * 2004-09-29 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体装置
JP2010034285A (ja) * 2008-07-29 2010-02-12 Rohm Co Ltd トレンチ型半導体素子及びトレンチ型半導体素子の製造方法
JP2021111658A (ja) * 2020-01-07 2021-08-02 株式会社デンソー トレンチゲート型スイッチング素子の製造方法
JP2023100098A (ja) * 2022-01-05 2023-07-18 ローム株式会社 半導体装置
WO2023203894A1 (ja) * 2022-04-21 2023-10-26 ローム株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3400846B2 (ja) * 1994-01-20 2003-04-28 三菱電機株式会社 トレンチ構造を有する半導体装置およびその製造方法
JP4608133B2 (ja) * 2001-06-08 2011-01-05 ルネサスエレクトロニクス株式会社 縦型ｍｏｓｆｅｔを備えた半導体装置およびその製造方法
JP2003124233A (ja) * 2002-08-05 2003-04-25 Hitachi Ltd 半導体装置の製造方法
DE112015004374B4 (de) * 2014-09-26 2019-02-14 Mitsubishi Electric Corporation Halbleitervorrichtung
JP6872951B2 (ja) * 2017-03-30 2021-05-19 エイブリック株式会社 半導体装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006035877A1 (ja) * 2004-09-29 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体装置
JP2010034285A (ja) * 2008-07-29 2010-02-12 Rohm Co Ltd トレンチ型半導体素子及びトレンチ型半導体素子の製造方法
JP2021111658A (ja) * 2020-01-07 2021-08-02 株式会社デンソー トレンチゲート型スイッチング素子の製造方法
JP2023100098A (ja) * 2022-01-05 2023-07-18 ローム株式会社 半導体装置
WO2023203894A1 (ja) * 2022-04-21 2023-10-26 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
WO2025173150A1 (ja) 2025-08-21
JP2025142269A (ja) 2025-09-30
JPWO2025173150A1 (https=) 2025-08-21

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