JPWO2025173150A1 - - Google Patents
Info
- Publication number
- JPWO2025173150A1 JPWO2025173150A1 JP2025522996A JP2025522996A JPWO2025173150A1 JP WO2025173150 A1 JPWO2025173150 A1 JP WO2025173150A1 JP 2025522996 A JP2025522996 A JP 2025522996A JP 2025522996 A JP2025522996 A JP 2025522996A JP WO2025173150 A1 JPWO2025173150 A1 JP WO2025173150A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025125350A JP2025142269A (ja) | 2024-02-15 | 2025-07-28 | 半導体装置及び半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2024/005165 WO2025173150A1 (ja) | 2024-02-15 | 2024-02-15 | 半導体装置及び半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025125350A Division JP2025142269A (ja) | 2024-02-15 | 2025-07-28 | 半導体装置及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7721041B1 JP7721041B1 (ja) | 2025-08-08 |
| JPWO2025173150A1 true JPWO2025173150A1 (https=) | 2025-08-21 |
| JPWO2025173150A5 JPWO2025173150A5 (https=) | 2026-01-21 |
Family
ID=96656979
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025522996A Active JP7721041B1 (ja) | 2024-02-15 | 2024-02-15 | 半導体装置及び半導体装置の製造方法 |
| JP2025125350A Pending JP2025142269A (ja) | 2024-02-15 | 2025-07-28 | 半導体装置及び半導体装置の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025125350A Pending JP2025142269A (ja) | 2024-02-15 | 2025-07-28 | 半導体装置及び半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP7721041B1 (https=) |
| WO (1) | WO2025173150A1 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3400846B2 (ja) * | 1994-01-20 | 2003-04-28 | 三菱電機株式会社 | トレンチ構造を有する半導体装置およびその製造方法 |
| JP4608133B2 (ja) * | 2001-06-08 | 2011-01-05 | ルネサスエレクトロニクス株式会社 | 縦型ｍｏｓｆｅｔを備えた半導体装置およびその製造方法 |
| JP2003124233A (ja) * | 2002-08-05 | 2003-04-25 | Hitachi Ltd | 半導体装置の製造方法 |
| US7709888B2 (en) * | 2004-09-29 | 2010-05-04 | Panasonic Corporation | Semiconductor device |
| JP5403966B2 (ja) * | 2008-07-29 | 2014-01-29 | ローム株式会社 | トレンチ型半導体素子及びトレンチ型半導体素子の製造方法 |
| DE112015004374B4 (de) * | 2014-09-26 | 2019-02-14 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
| JP6872951B2 (ja) * | 2017-03-30 | 2021-05-19 | エイブリック株式会社 | 半導体装置及びその製造方法 |
| JP7388197B2 (ja) * | 2020-01-07 | 2023-11-29 | 株式会社デンソー | トレンチゲート型スイッチング素子の製造方法 |
| JP7835562B2 (ja) * | 2022-01-05 | 2026-03-25 | ローム株式会社 | 半導体装置 |
| CN119054085A (zh) * | 2022-04-21 | 2024-11-29 | 罗姆股份有限公司 | 半导体装置 |
-
2024
- 2024-02-15 JP JP2025522996A patent/JP7721041B1/ja active Active
- 2024-02-15 WO PCT/JP2024/005165 patent/WO2025173150A1/ja active Pending
-
2025
- 2025-07-28 JP JP2025125350A patent/JP2025142269A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP7721041B1 (ja) | 2025-08-08 |
| WO2025173150A1 (ja) | 2025-08-21 |
| JP2025142269A (ja) | 2025-09-30 |
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